GaAs SPDT RF Switch DC - 3 GHz Features ● ● ● SW-219 CR-3 Fast Switching Speed, 6 ns Typical Ultra Low DC Power Consumption Small Package Size, 0.180" (4.6mm) Sq. Guaranteed Specifications1 Frequency Range Insertion Loss VSWR Isolation DC – 3.0 GHz DC – 2.0 GHz DC – 1.0 GHz DC – 0.5 GHz DC – 3.0 GHz DC – 2.0 GHz DC – 1.0 GHz DC – 0.5 GHz DC – 3.0 GHz DC – 2.0 GHz DC – 1.0 GHz DC – 0.5 GHz (-55°Cto +85°C) DC – 3.0 GHz 0.9 dB Max 0.8 dB Max 0.8 dB Max 0.7 dB Max 1.6:1 Max 1.3:1 Max 1.2:1 Max 1.2:1 Max 23 dB Min 28 dB Min 38 dB Min 43 dB Min Operating Characteristics Impedance 50 Ohms Nominal Switching Characteristics Trise, Tfall 3 ns Typ Ton, Toff (50% CTL to 90%/10% RF) 6 ns Typ Transients (In-Band) 10 mV Typ Input Power for 1 dB Compression Control Voltages (Vdc) 0/-5 0/-8 0.5 – 3.0 GHz +27 +33 dBm Typ 0.05 GHz +21 +26 dBm Typ Intermodulation Intercept Pt. (for two-tone input power up to +13 dBm) Intercept Points IP2 IP3 0.5 – 3.0 GHz +62 +40 dBm Typ 0.05 GHz +68 +46 dBm Typ Control Voltages (Complementary Logic) Vin Low 0 to -0.2V @ 20 µA Max Vin High -5V @ 50 µA Typ to -8V @ 300 µA Max 1. All specifications apply with 50 ohm impedance connected to all RF ports with 0 and -5 Vdc control voltages. 2. See Appendix for MIL-STD-883 screening option. Ordering Information Part Number SW-219 PIN SW-219G PIN SW-219B PIN Package Ceramic (CR-3) Ceramic Gull Winged (CR-10) Screened to MIL-STD-883C, Method 5008.4, Table VII Class B Hybrid (CR-3) CR-10 V 2.00 GaAs SPDT RF Switch SW-219 V 2.00 Absolute Maximum Ratings Parameter 1 Absolute Maximum Max. Input Power 0.05 GHz 0.5–2.0 GHz Control Voltage Operating Temperature Storage Temperature +27 dBm +34 dBm +5 V, –8.5 V –55˚C to +125°C –65˚C to +150˚C 1.Operation of this device above any one of these parameters may cause permanent damage. Truth Table Control Input A High Low B Low High Condition of Switch RF Common to each RF Por t RF1 RF2 ON OFF OFF ON When an RF output is off, it is shorted to ground. Typical Performance Functional Schematic