BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage VEBO –5.0 V IC –100 mAdc Symbol Max Unit Rating BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Collector Current – Continuous http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MARKING DIAGRAM 3 PD RJA 225 1.8 mW mW/°C 556 °C/W PD RJA 300 2.4 mW mW/°C 417 °C/W 3 1 xx 2 SOT–23 CASE 318 STYLE 6 1 xx 2 = Device Code = (See Table Below) ORDERING INFORMATION TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. –55 to +150 °C Device Package Mark Shipping BC856ALT1 SOT–23 3A 3000/Tape & Reel BC856BLT1 SOT–23 3B 3000/Tape & Reel BC857ALT1 SOT–23 3E 3000/Tape & Reel BC857BLT1 SOT–23 3F 3000/Tape & Reel BC858ALT1 SOT–23 3J 3000/Tape & Reel BC858BLT1 SOT–23 3K 3000/Tape & Reel BC858CLT1 SOT–23 3L 3000/Tape & Reel BC859BLT1 SOT–23 4B 3000/Tape & Reel BC859CLT1 SOT–23 4C 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 – Rev. 2 Publication Order Number: BC856ALT1/D BC856ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO –65 –45 –30 – – – – – – V Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) BC856 Series BC857 Series BC858, BC859 Series V(BR)CES –80 –50 –30 – – – – – – V Collector–Base Breakdown Voltage (IC = –10 A) BC856 Series BC857 Series BC858, BC859 Series V(BR)CBO –80 –50 –30 – – – – – – V Emitter–Base Breakdown Voltage (IE = –1.0 A) BC856 Series BC857 Series BC858, BC859 Series V(BR)EBO –5.0 –5.0 –5.0 – – – – – – V ICBO – – – – –15 –4.0 nA µA hFE – – – 90 150 270 – – – – 125 220 420 180 290 520 250 475 800 – – – – –0.3 –0.65 – – –0.7 –0.9 – – –0.6 – – – –0.75 –0.82 fT 100 – – MHz Output Capacitance (VCB = –10 V, f = 1.0 MHz) Cob – – 4.5 pF Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series NF Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) (IC = –2.0 mA, VCE = –5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC858C, BC859C Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VCE(sat) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) VBE(on) V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) http://onsemi.com 2 dB – – – – 10 4.0 BC856ALT1 Series BC857/BC858/BC859 -1.0 1.5 TA = 25°C -0.9 VCE = -10 V TA = 25°C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25°C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Cib TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base–Emitter Temperature Coefficient 10 7.0 -55°C to +125°C 1.2 Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 -20 -30 -40 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product http://onsemi.com 3 BC856ALT1 Series BC856 TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base–Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C -55°C to 125°C -2.2 Figure 9. Collector Saturation Region 40 θVB for VBE VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product http://onsemi.com 4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856ALT1 Series 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.07 0.05 0.1 0.05 SINGLE PULSE SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 0.1 ZθJC(t) = r(t) RθJC RθJC = 83.3°C/W MAX ZθJA(t) = r(t) RθJA RθJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RθJC(t) P(pk) 0.2 0.5 1.0 2.0 10 5.0 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response -200 1s The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25°C TJ = 25°C BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC856ALT1 Series INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT-23 POWER DISSIPATION into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = PD = 150°C – 25°C = 225 milliwatts 556°C/W The 556°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a power dissipation of 400 milliwatts can be achieved using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 6 BC856ALT1 Series PACKAGE DIMENSIONS SOT–23 TO–236AB CASE 318–08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BC856ALT1 Series Thermal Clad is a registered trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. 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