BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC847CDW1T1 = 1G BC848BDW1T1 = 1K BC848CDW1T1 = 1L (3) (2) (1) Q1 Q2 (4) (5) (6) 6 5 4 MAXIMUM RATINGS 1 Rating Symbol BC846 BC847 BC848 Unit Collector–Emitter Voltage VCEO 65 45 30 V Collector–Base Voltage VCBO 80 50 30 V Emitter–Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current – Continuous 2 3 SOT–363 CASE 419B STYLE 1 DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C Symbol Max Unit PD 380 250 mW 3.0 mW/°C Thermal Resistance, Junction to Ambient RJA 328 °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C September, 2001 – Rev. 1 1x = Specific Device Code x1 = B, F, G, K, L ORDERING INFORMATION Device 1. FR–5 = 1.0 x 0.75 x 0.062 in Semiconductor Components Industries, LLC, 2001 1x 1 Package Shipping BC846BDW1T1 SOT–363 3000 Units/Reel BC847BDW1T1 SOT–363 3000 Units/Reel BC847CDW1T1 SOT–363 3000 Units/Reel BC848BDW1T1 SOT–363 3000 Units/Reel BC848CDW1T1 SOT–363 3000 Units/Reel Publication Order Number: BC846BDW1T1/D BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 – – – – – – 80 50 30 – – – – – – 80 50 30 – – – – – – 6.0 6.0 5.0 – – – – – – – – – – 15 5.0 BC846B, BC847B, BC848B BC847C, BC848C – – 150 270 – – BC846B, BC847B, BC848B BC847C, BC848C 200 420 290 520 450 800 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 A) Emitter–Base Breakdown Voltage (IE = 1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847 Series BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO V nA µA ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE – Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) – – – – 0.25 0.6 V Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) – – 0.7 0.9 – – V Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 – 660 – 700 770 mV fT 100 – – MHz Cobo – – 4.5 pF – – 10 SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 2 NF dB BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series TYPICAL CHARACTERISTICS – BC847 SERIES & BC848 SERIES 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 100 Figure 4. Base–Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 2. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 40 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current–Gain – Bandwidth Product http://onsemi.com 3 50 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series TYPICAL CHARACTERISTICS – BC846 SERIES TA = 25°C VCE = 5 V TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Cib 10 6.0 Cob 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 50 100 200 -1.4 -1.8 θVB for VBE -55°C to 125°C -2.2 -2.6 -3.0 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 2.0 200 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient 40 4.0 100 -1.0 Figure 9. Collector Saturation Region 20 50 Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Normalized DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product http://onsemi.com 4 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.001 ZJA(t) = r(t) RJA RJA = 328C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0 10 1.0 100 t, TIME (ms) 1.0k 10k 100k 1.0M Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 -10 -5.0 -2.0 -1.0 TA = 25°C The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 3 ms TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) 1.9 mm SOT–363 SOT–363 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–363 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT–363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 6 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series PACKAGE DIMENSIONS SOT–363 CASE 419B–01 ISSUE G A G V 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 DIM A B C D G H J K N S V –B– S 1 2 3 D 6 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 7 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 BC846BDW1T1/D