ETC BC847CDW1T1

BC846BDW1T1,
BC847BDW1T1 Series,
BC848BDW1T1 Series
Dual General Purpose
Transistors
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NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
• Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC847CDW1T1 = 1G
BC848BDW1T1 = 1K
BC848CDW1T1 = 1L
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
6 5
4
MAXIMUM RATINGS
1
Rating
Symbol
BC846
BC847
BC848
Unit
Collector–Emitter Voltage
VCEO
65
45
30
V
Collector–Base Voltage
VCBO
80
50
30
V
Emitter–Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
Collector Current –
Continuous
2
3
SOT–363
CASE 419B
STYLE 1
DEVICE MARKING
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
TA = 25°C
Derate Above 25°C
Symbol
Max
Unit
PD
380
250
mW
3.0
mW/°C
Thermal Resistance,
Junction to Ambient
RJA
328
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
September, 2001 – Rev. 1
1x = Specific Device Code
x1 = B, F, G, K, L
ORDERING INFORMATION
Device
1. FR–5 = 1.0 x 0.75 x 0.062 in
 Semiconductor Components Industries, LLC, 2001
1x
1
Package
Shipping
BC846BDW1T1
SOT–363
3000 Units/Reel
BC847BDW1T1
SOT–363
3000 Units/Reel
BC847CDW1T1
SOT–363
3000 Units/Reel
BC848BDW1T1
SOT–363
3000 Units/Reel
BC848CDW1T1
SOT–363
3000 Units/Reel
Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
65
45
30
–
–
–
–
–
–
80
50
30
–
–
–
–
–
–
80
50
30
–
–
–
–
–
–
6.0
6.0
5.0
–
–
–
–
–
–
–
–
–
–
15
5.0
BC846B, BC847B, BC848B
BC847C, BC848C
–
–
150
270
–
–
BC846B, BC847B, BC848B
BC847C, BC848C
200
420
290
520
450
800
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(IC = 10 µA, VEB = 0)
Collector–Base Breakdown Voltage
(IC = 10 A)
Emitter–Base Breakdown Voltage
(IE = 1.0 A)
V(BR)CEO
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CES
BC846 Series
BC847 Series
BC848 Series
V
V(BR)CBO
BC846 Series
BC847 Series
BC848 Series
V
V(BR)EBO
BC846 Series
BC847 Series
BC848 Series
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
V
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
–
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
–
–
–
–
0.25
0.6
V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
–
–
0.7
0.9
–
–
V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
–
660
–
700
770
mV
fT
100
–
–
MHz
Cobo
–
–
4.5
pF
–
–
10
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz)
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2
NF
dB
BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
TYPICAL CHARACTERISTICS – BC847 SERIES & BC848 SERIES
1.0
VCE = 10 V
TA = 25°C
1.5
TA = 25°C
0.9
0.8
1.0
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
10 mA 20 mA
0.8
IC = 100 mA
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
20
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
20
100
Figure 4. Base–Emitter Temperature Coefficient
10
5.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 3. Collector Saturation Region
7.0
50 70 100
Figure 2. “Saturation” and “On” Voltages
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
40
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
Figure 5. Capacitances
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 6. Current–Gain – Bandwidth Product
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3
50
BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
TYPICAL CHARACTERISTICS – BC846 SERIES
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.2
0.5
1.0
2.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
Cib
10
6.0
Cob
0.1
0.2
1.0 2.0
10 20
0.5
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
50
100
200
-1.4
-1.8
θVB for VBE
-55°C to 125°C
-2.2
-2.6
-3.0
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
2.0
200
0.2
0.5
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
40
4.0
100
-1.0
Figure 9. Collector Saturation Region
20
50
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Normalized DC Current Gain
10 20
2.0
5.0
IC, COLLECTOR CURRENT (mA)
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.001
ZJA(t) = r(t) RJA
RJA = 328C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0
10
1.0
100
t, TIME (ms)
1.0k
10k
100k
1.0M
Figure 13. Thermal Response
-200
1s
IC, COLLECTOR CURRENT (mA)
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
The safe operating area curves indicate IC–VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk) ≤
150°C. T J(pk) may be calculated from the data in
Figure 13. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
3 ms
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.65 mm 0.65 mm
0.4 mm (min)
0.5 mm (min)
1.9 mm
SOT–363
SOT–363 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the
SOT–363 package, PD can be calculated as follows:
PD =
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. Therefore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage
to the device.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–363 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
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BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
PACKAGE DIMENSIONS
SOT–363
CASE 419B–01
ISSUE G
A
G
V
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
DIM
A
B
C
D
G
H
J
K
N
S
V
–B–
S
1
2
3
D 6 PL
0.2 (0.008)
M
B
M
N
J
C
H
K
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INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
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Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
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Phone: 81–3–5740–2700
Email: [email protected]
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For additional information, please contact your local
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BC846BDW1T1/D