PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Description Features The ECM806 is a 6 X 6 mm cellular band (824 to 849MHz) dual mode (TDMA IS136 and AMPS) power amplifier module. This device was developed using EiC’s own InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. It operates from a positive voltage (3.2 - 4.2V Vcc) and includes a power-down feature. The input and output are both matched to 50Ω internally. It is housed in a 6 X 6 mm Land Grid Array package. Dual Mode TDMA IS136/AMPS 6 X 6 mm Module Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery Power-down activated when Vref pin <1V 30.0 dBm TDMA Power with 42% Efficiency 31.0 dBm AMPS Power 120mA Typical Quiescent Current High Reliability InGaP HBT Applications 3.5 V TDMA/AMPS Cellular Handsets CAUTION! SENSITIVE ELECTRONIC DEVICE SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 1 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE ELECTRICAL SPECIFICATIONS The following table lists the electrical performance of the ECM806 for nominal operating conditions for the cellular TDMA (digital) and AMPS (analog) at 836.5MHz.. Table 2 lists the performance for 824 and 849MHz.Table 3 lists the absolute maximum ratings for continuous operation. Table 1 - Electrical Specifications o Test Conditions: Ta = 25 C, VCC = +3.5 V, VREF / PD (reference / power-down voltage) = +3.1 V, F = 836.5 MHz SYMBOL LIMITS PARAMETER Frequency Gain (TDMA Modulation) Output Power (TDMA) Adjacent Channel Power Rejection @ 30.0 dBm Alternate Channel Power Rejection @ 30.0 dBm Alternate Channel Power Rejection @ 30.0 dBm Power Added Efficiency (AMPS) 31.0 dBm Power Added Efficiency (Digital) @ 30.0 dBm Gain (AMPS) @ Pout = 31dBm Output Stability (spurious output all phases) Tolerance for output VSWR Mismatch Quiescent Current (No RF) Leakage Current Vcc = 3.5V, Vref = 0V Vref/pd Supply Current Reference Voltage Supply Voltage Input Return Loss Noise Figure Noise Power in RX band 869-894MHz Po = 31dBm Harmonics, 2f, 3f, 4f Power Down On/Off Time Using Application Schematic. Tuned for TDMA. @ 30 KHz offset from band center. @ 60 KHz offset from band center. @ 90 KHz offset from band center. -60dBc Max. F G Pout ACPR Alt CPR2 Alt CPR3 PAE PAE PSAT G ICQ Ipd Vref /pd Vcc IRL NF Np TON/OFF NOTE 1: NOTE 2: NOTE 3: NOTE 4: NOTE 5: MIN. TYP. 26 30 29 45 38 27 0 3.2 -30.5 -52.5 -62 48 42 29 6:1 10:1 110 2 6 3.1 3.5 10 10 MAX. -29 -50 -55 140 25 7 3.3 4.2 7.0 -133.0 -42 30 UNIT MHz dB dBm dBc dBc dBc % % dBm VSWR TEST CONDITION NOTE NOTE NOTE NOTE 1 2 3 4 NOTE 5 No Damage mA uA mA V V dB dB dBm/Hz dBc µs CAUTION! SENSITIVE ELECTRONIC DEVICE SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 2 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE ELECTRICAL SPECIFICATIONS The following table lists the electrical performance of the ECM806 for nominal operating conditions for the cellular TDMA (digital) and AMPS (analog) in the 824MHz to 849MHz band. Table 3 lists the absolute maximum ratings for continuous operation. Table 2 - Electrical Specifications Test Conditions: Ta = 25oC, VCC = +3.5 V, VREF / PD (reference / power-down voltage) = +3.1 V SYMBOL LIMITS PARAMETER Frequency Gain (TDMA Modulation) Output Power (TDMA) Adjacent Channel Power Rejection @ 30.0 dBm Alternate Channel Power Rejection @ 30.0 dBm Alternate Channel Power Rejection @ 30.0 dBm Power Added Efficiency (AMPS) 31.0 dBm Power Added Efficiency (Digital) @ 30.0 dBm Gain(AMPS) @ Pout = +31dBm Output Stability (spurious output all phases) Tolerance for output VSWR Mismatch Quiescent Current (No RF) Leakage Current Vcc = 3.5V, Vref = 0V Vref/pd Supply Current Reference Voltage Supply Voltage Input Return Loss Noise Figure Noise Power in RX band 869-894MHz Po = 31dBm Harmonics, 2f, 3f, 4f Power Down On/Off Time Using Application Schematic. Tuned for TDMA. @ 30 KHz offset from band center. @ 60 KHz offset from band center. @ 90 KHz offset from band center. -60dBc Max. F G Pout ACPR Alt CPR2 Alt CPR3 PAE PAE PSAT G ICQ Ipd Vref /pd Vcc IRL NF Np TON/OFF NOTE 1: NOTE 2: NOTE 3: NOTE 4: NOTE 5: MIN. TYP. 824 26 30 30 41 37 26 0 3.2 849 -30.5 -52.5 -62 45 42 29 6:1 10:1 120 2 6 3.1 3.5 -10 10 UNIT MAX. -27 -46 -52 150 25 7 3.3 4.2 7.0 -133.0 -42 30 TEST CONDITION MHz dB dBm dBc dBc dBc % % dBm VSWR NOTE NOTE NOTE NOTE 1 2 3 4 NOTE 5 No Damage mA uA mA V V dB dB dBm/Hz dBc µs Table 3 - Absolute Maximum Ratings Exceeding any of the absolute maximum ratings may cause permanent damage to the device. No damage assuming only one parameter is set at limit at a time with other parameters set at or below nominal value. PARAMETER Supply Voltage RATING 5 UNIT Volts TEST CONDITION VREF / PD = 3.1V 3.3 Volts V CC = 3.5V +8 -40 to +110 -65 to +140 -40 to +85 dBm °C °C °C Reference / Power-down Voltage(Vcc=VREF / PD ) RF Power Input Case Operating Temperature Storage Temperature Ambient Operating Temperature VCC , VREF / PD = 3.1V SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 3 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE PACKAGE DIMENSIONS AND MARKINGS The ECM806 is a laminate base, overmold encapsulated modular package designed for surface-mounted solder attachment to a printed circuit board. Package Dimensions X X1 1 X X1 X2 X3 Y Y1 Y2 Y3 6 Y1 Y2 Y3 min .228 .091 .043 .090 .228 .091 .071 inches nom .232 .095 .047 .094 .232 .095 .075 max .236 .099 .051 .098 .236 .099 .079 min 5.78 2.31 1.09 2.29 5.78 2.31 1.81 millimeters nom 5.89 2.41 1.19 2.39 5.89 2.41 1.91 max 5.99 2.51 1.29 2.49 5.99 2.51 2.01 .139 .143 .147 3.53 3.63 3.73 X1 7 2 5 Y Metric values are converted from English values. Metric values are rounded off. Y1 3 4 X2 BOTTOM SIDE PAD .036" X .030" (.91mm X .76mm) X3 1 2 3 4 5 6 7 BOTTOM SIDE GROUND PAD Device Marking PINOUT Vcc1 RFin VPD Vcc2 RFout GND GND .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) .232" +/- 0.004" (5.89mm +/- 0.1mm) PIN 1 INDICATOR EiC xxxx ECM806 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 4 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE PCB LAYOUT 1. The front side of the pcb ground area under the PAM requires the use of multiple vias to provide low thermal resistance to the backside of the pcb ground. SCHEMATIC QTY 3 3 1 2 1 1 1 DESIGNATOR C1, C4, C6 C3, C5, C7 C2 J2, J3 U1 --J1 VALUE 100pF 1.0uF 10 uF ECM806 ------- DESCRIPTION CAPACITOR, 0603 CAPACITOR, 0603 CAPACITOR, 6032 SMA CONNECTOR IC 26 GA, WIRE .5” CONNECTOR, RT. ANG PCB MANUFACTURER &P/N ROHM MCH185A101JK ROHM MCH182F105ZK PANASONIC ECS-HICC106R CDI 5260CC EiC Corp ANY SULLINS PZC04SGAN EiC Corp 60-000481-000(1) SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 NOTE 1 NOTE 1 NOTE 1 NOTE 1 Fax: (510) 979-8902 www.eiccorp.com 5 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE PIN 1 2 FUNCTION Vcc1 RF In 3 Vref / Vpd 4 5 6 Vcc2 RF Out GND 7 GND Notes: DESCRIPTION PIN 1 connects to the driver stage HBT collector. RF input port connects to internally matched 50 ohm circuit. Ref. Voltage for the bias circuit. No significant amplifier current is drawn until Vref reaches approximately 2.5V. Vcc2 connects to the power amplifier stage HBT collector. RF out is internally matched to 50 ohms and expects a 50 ohm load impedance. Ground Ground. This ground also serves as heat sink and must connect well to the PCB RF ground and heat sink. All supply pins may be connected together at the supply. SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 6 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Figure 1 Gain vs. Pout, AMPS Mode Vcc = 3.5V 35 34 33 32 824MHz, -40degC Gain (dB) 31 836MHz, -40degC 30 849MHz, -40degC 29 824MHz, 25degC 28 836MHz, 25degC 27 849MHz, 25degC 26 824MHz, 85degC 25 836MHz, 85degC 24 849MHz, 85degC 23 22 21 20 0 5 10 15 20 25 30 35 Po Figure 2 Icc vs. Pout, AMPS Mode Vcc = 3.5V 900 800 700 824MHz, -40degC 836MHz, -40degC 600 Icc (mA) 849MHz, -40degC 824MHz, 25degC 500 836MHz, 25degC 400 849MHz, 25degC 824MHz, 85degC 300 836MHz, 85degC 849MHz, 85degC 200 100 0 0 5 10 15 20 25 30 35 Po SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 7 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Figure 3 PAE vs. Temperature vs. Frequency vs. Pout (TDMA Mode) 50 45 40 35 824MHz -40°C 836MHz -40°C eff (%) 30 849MHz -40°C 824MHz 25°C 25 836MHz 25°C 849MHz 25°C 20 824MHz 85°C 15 836MHz 85°C 849MHz 85°C 10 5 0 0 5 10 15 20 25 30 35 Pout (dBm) Figure 4 PAE vs. Temperature vs. Frequency vs. Pout (AMPS Mode) 50 45 40 35 824MHz -40°C 836MHz -40°C eff (%) 30 849MHz -40°C 824MHz 25°C 25 836MHz 25°C 849MHz 25°C 20 824MHz 85°C 15 836MHz 85°C 849MHz 85°C 10 5 0 0 5 10 15 20 25 30 35 Pout (dBm) SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 8 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Figure 5 Gain vs. Pout, TDMA Mode 35 34 33 Gain (dB) 32 31 824MHz, -40degC 30 836MHz, -40degC 849MHz, -40degC 29 824MHz, 25degC 28 836MHz, 25degC 27 849MHz, 25degC 26 824MHz, 85degC 25 836MHz, 85degC 24 849MHz, 85degC 23 22 21 20 0 5 10 15 20 25 30 35 Po Figure 6 Icc vs. Pout, TDMA Mode 900 800 700 824MHz, -40degC 836MHz, -40degC 600 Icc (mA) 849MHz, -40degC 824MHz, 25degC 500 836MHz, 25degC 849MHz, 25degC 400 824MHz, 85degC 300 836MHz, 85degC 849MHz, 85degC 200 100 0 0 5 10 15 20 25 30 35 Po SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 9 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Figure 7 ACPR1 vs. Pout, TDMA Mode -22 -24 -26 824MHz, -40degC ACPR1 (dB) 836MHz, -40degC 849MHz, -40degC -28 824MHz, 25degC 836MHz, 25degC -30 849MHz, 25degC 824MHz, 85degC 836MHz, 85degC -32 849MHz, 85degC -34 -36 0 5 10 15 20 25 30 35 Po Figure 8 ACPR2 vs. Pout, TDMA Mode -40 -45 824MHz, -40degC -50 ACPR2 (dB) 836MHz, -40degC 849MHz, -40degC -55 824MHz, 25degC 836MHz, 25degC 849MHz, 25degC -60 824MHz, 85degC 836MHz, 85degC -65 849MHz, 85degC -70 -75 0 5 10 15 20 25 30 35 Po SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 10 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Figure 9 ACPR3 vs. Pout, TDMA Mode -50 -55 824MHz, -40degC ACPR3 (dB) -60 849MHz, -40degC 849MHz, -40degC 824MHz, 25degC -65 836MHz, 25degC 849MHz, 25degC 824MHz, 85degC -70 836MHz, 85degC 849MHz, 85degC -75 -80 0 5 10 15 20 25 30 35 Po SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 11 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE ECM806 Operating Principles and Key Features ECM806 is a 6x6mm size Power Amplifier Module (PAM) for cellular band TDMA (digital) and AMPS (analog) handset market.. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs proprietary InGaP HBT provides excellent reliability and is used in the infrastructure industry. The InGaP HBT is inherently superior to AlGaAs HBT. The surface defect density in InGaP is much lower than that of AlGaAs. The HBT life test of EiC InGaP HBT has gone through 315oC junction temperature and 50kA/cm2 for over 6000 hours (8 ½ months), translating to multi-million hours lifetime or longer in the operation envelope [1]. This kind of robust performance is far superior to conventional AlGaAs HBT. The InGaP HBT PAM goes through a product burn-in test as well. A large sample group, usually 100 pieces, goes through burn-in test at an ambient temperature of 125 to 145 oC for 1000 hours. The FIT number is than calculated based upon the data collected. The MTTF is simply 1/FIT, this MTTF should agree with the HBT life test results. The agreement between the MTTF of HBT from life test and the FIT is essential: it validates both tests! If there is a large discrepancy [2], the quality claim may be flawed. Although handset applications do not have as stringent operating requirements as the infrastructure market, the high reliability of InGaP HBT offers an assurance to the user of a high quality product designed for high volume production. II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature Variation Current gain of InGaP HBT varies about 10% over –40 to +85oC range, compared with 50% of AlGaAs HBT. This low gain variation over temperature, coupled with the patent-pending circuit design approach, provides for more stable electrical performance. III. ECM806 Offers High Gain and Margin for Transmitter Chain Design The typical gain of the ECM806 is 30dB. This high gain allows the driver amplifier to run very linear which results in reduced current. Taking into account the 3dB loss of the BPF in front of the PAM, the driver needs to deliver only 4dBm linear power. The P1dB of the driver amplifier should be more than 10dBm. SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 12 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE If a lower gain PAM is used, the driver needs to provide more power, at the expense of more operation current and possible degradation in ACPR. Therefore the ECM806 can replace a lower gain PAM, this allows the driver to work at a lower output power and provide better ACPR, this improved performance offers more design margin in the transmitter chain. IV. Easy Shut Down and Low Leakage Current The Vcc pin of the PAM is connected directly to the battery, therefore a shut down FET is not required. A voltage is applied to the Vref pin, which then brings up the quiescent current. Removing the voltage applied to Vref pin, the quiescent current will drop to a small leakage current, typically <10uA. The low leakage current of the PAM allows for a longer standby time for the phone. V. General Application The PAM requires a minimal number of external components. Both the input and output are dc-blocked within the PAM as shown in the function diagram. The input pin is connected to ground through a shunt inductor within the PAM. ECM806 is designed with a low quiescent current of 120mA typical. At full TDMA power of 30dBm, the operation current will be greater than 600mA. Therefore it is a “quasi class B” or “deep class AB” amplifier. The operation current increases with output power. TDMA signal has a time varying amplitude. The peak power is 2dB above the average RF power (it can be more accurately defined by PDF, power density function). As the peak power is clipped by the amplifier saturation power level, the distortion of the signal will cause the ACPR to deteriorate rapidly. Therefore the P1dB (as tested by a SINE wave) of the amplifier should be over 31dBm to provide good ACPR at 30 dBm of output power. A 100pF capacitor is required adjacent to the Vcc2 pin. In addition, a large capacitor (>uF) is required. The TDMA signal has a time-varying amplitude; therefore the PAM draws on operation current corresponding to the instantaneous demand by the RF power. The large capacitor near-by is the electric charge reservoir, providing current on demand. The long electrical path from battery behaves as a large inductor; the instantaneous demand on current will cause a voltage drop, resulting in poor ACPR. On the evaluation board, a large shunt capacitor is added to protect the Vref pin from power supply over-voltage during ON/OFF. This is similar but different from the ESD. Therefore the rise and fall time test of the power down feature needs to be tested with the shunt capacitor on Vref pin removed. SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 13 PRELIMINARY DATA SHEET ECM806 6 x 6 mm Dual Mode Cellular TDMA/AMPS 3.5V POWER AMPLIFIER MODULE Conclusion ECM806 offers high gain, low quiescent current, and a small footprint. The InGaP technology provides excellent reliability and quality, assuring the phone set manufacturer a high quality product designed for high volume production. Reference 1. “InGaP HBTs offer Enhanced Reliability”, Barry Lin, Applied Microwave and Wireless. pp 115-116, Dec. 2000 2.” Interaction of Degradation Mechanisms in Be-Doped GaAs HBTs”, Darrell Hill and John Parsey, Digest GaAs IC Symposium, Oct., 2000. pp 241-244 APPLICATION NOTES Please visit our website at www.eiccorp.com to view or download the following documents. You may also call our Customer Service to request a hardcopy. Document # Description AP-000513-000 Tape and Reel Specifications: PAMS AP-000516-000 Application Note Index ORDERING INFORMATION PKG. TYPE REEL QTY. ECM806 6X6 BULK ECM806-2000 6X6 2000 SS-000489-000 Revision J EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 Northport Loop West, Fremont, CA 94538 Phone: (510) 979-8999 Fax: (510) 979-8902 www.eiccorp.com 14