ETC NCP5203/D

NCP5203
2−in−1 DDR Power
Controller
The NCP5203 2−in−1 DDR Power Controller is a complete power
solution for an ACPI compliant high current DDR memory system.
This IC combines the efficiency of a PWM controller for the VDDQ
supply with the simplicity of linear regulator for the VTT
termination voltage. The NCP5203 contains a synchronous PWM
buck controller for driving two external NFETs to form the DDR
memory supply voltage (VDDQ). The 2.0 A user adjustable VTT
terminator regulator has short circuit protection. An internal power
good function monitors both the VDDQ and VTT outputs and signals
if a fault occurs. Protective features include soft−start, under−voltage
monitoring of 5VDUAL, over protection current (OCP), and thermal
shutdown. The IC is packaged in 18−lead QFN.
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MARKING
DIAGRAM
1
18
1
18−LEAD QFN, 5 x 6 mm
MN SUFFIX
CASE 505
NCP5203
AWLYYWW
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Supports DDR I and DDR II
Incorporates VDDQ, VTT Regulators
Operates from Single 5 V Supply
VTT Regulator includes Integrated Power FETs Sourcing/Sinking
up to 2.0 A
All External Power MOSFETs are N−Channel
Adjustable VDDQ
Adjustable VTT
Fixed Switching Frequency of 300 kHz for VDDQ in S0
Fixed Switching Frequency of 600 kHz for VDDQ in S3
Soft−Start Protection for VDDQ
Undervoltage Monitor of 5VDUAL
Short−Circuit Protection for VDDQ and VTT
Thermal Shutdown
Housed in QFN−18
A
WL
YY
WW
= Assembly Location
= Wafer Lot
= Year
= Work Week
PIN CONNECTIONS
VDDQEN
VTTEN
PGOOD
REFSNS
FBVTT
AGND
SS
COMP
FBDDQ
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
VDDQ
VTT
PGND
BST
BGDDQ
TGDDQ
5VDUAL
SWDDQ
OCDDQ
Typical Applications
• DDR Memory Supply and Termination Voltage
• Active Termination Busses (SSTL−2, SSTL−3)
ORDERING INFORMATION
Device
Package
Shipping†
NCP5203MNR2 18−Lead QFN 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
 Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 0
1
Publication Order Number:
NCP5203/D
NCP5203
CL1
VTTEN
VTTEN
RL1
VDDQEN
VDDQEN
OCDDQ
BST
5VDUAL
5VDUAL
5VDUAL
PGOOD
PGOOD
M1
TGDDQ
SS
L
VDDQ
2.5V, 15A
NCP5203
CSS
COUT1
SWDDQ
VTT
VTT
1.25 V,
2.0 A Peak
M2
BGDDQ
FBVTT
PGND
COUT2
COMP
CZ1
RZ1
CP1
CZ2
RZ2
R1
FBDDQ
R3
R2
REFSNS
AGND
VDDQ
R4
Figure 1. Typical Application Diagram
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2
PGOOD
R5
5VDUAL
CSS
SS
5VDUAL
VTTEN
VDDQEN
5VDUAL
Figure 2. Detailed Block Diagram
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3
GND
PGND
VREF
AGND
5VDUAL
R11
R10
5VDUAL
−
+
−
+
−
+
SC2GND
SC2PWR
OSC
Control
Logic
PWM−
COMP
+
AMP
A
UVLO
PGND
RZ1
CZ1
COMP
PGND
5VDUAL
PGND
PGND
M2
FBVTT
VTT
VDDQ
CP1
RL1
REFSNS
M1
PGND
BGDDQ
SWDDQ
TGDDQ
OCDDQ
BST
5VDUAL
R17
R16
VBST
PGND
VBST
VBST
5VDUAL
FBDDQ
VREF
R15
R14
VREF
FBDDQ
VREF
FBDDQ
IREF
Thermal
Shutdown
−
+
−
+
−
OVLO
+
−
+
VDDQS0
VDDQS3
VTTS0
VTTS3
TSD
INREGDDQ
ILIM
VTT
Regulation
Control
−
VDDQ
PWM
Logic
INREGVTT
VTTS0
VTTS3
INREGDDQ
INREGVTT
VDDQS0
VDDQS3
FAULT
5VDL GD
VREFGD
VREF
5VDUAL
UVLO
Voltage and
Current Reference
M4
M3
VTT
RZ2
CZ2
R1
R2
L
R4
R3
COUT1
VDDQ
5VDUAL
CBST
COUT2
CDCPL
CBULK
LIN
NCP5203
NCP5203
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Description
1
VDDQEN
2
VTTEN
VTT regulator enable input. Active high.
3
PGOOD
Power good signal open−drain output.
4
REFSNS
Reference voltage input of VTT regulator.
5
FBVTT
VTT regulator feedback pin for closed loop regulation.
6
AGND
Analog ground connection and remote ground sense.
7
SS
Soft−start capacitor connection to ground.
8
COMP
VDDQ error amplifier compensation node.
9
FBDDQ
VDDQ regulator feedback pin for closed loop regulation.
10
OCDDQ
Overcurrent sense and program input for the high−side FET of VDDQ regulator.
11
SWDDQ
VDDQ regulator inductor driven node and current limit sense input.
12
5VDUAL
5VDUAL supply input.
13
TGDDQ
Gate driver output for DDQ regulator high−side N−Channel power FET.
14
BGDDQ
Gate driver output for DDQ regulator low−side N−Channel power FET.
15
BST
16
PGND
17
VTT
18
VDDQ
VDDQ regulator enable input. Active high.
Supply input of VDDQ regulator and 5 V boost capacitor connection.
Power ground.
VTT regulator output.
Power input for VTT regulator.
MAXIMUM RATINGS (Note 1)
Symbol
Value
Unit
Power Supply Voltage (Pin 12, 18)
Rating
5VDUAL
−0.3, 6.5
V
Gate Drive Supply/Output Voltage (Pin 13, 14, 15)
VBST, Vg
−0.3, 14
V
Switch DDQ (Pin 11)
SWDDQ
−1.0, 5VDUAL
V
Input/Output Pins
Pin 1, 2, 7; 4, 5, 17; 3, 8, 9, 10
VIO
−0.3, 6.5
V
Thermal Characteristics
QFN−18 Plastic Package
Thermal Resistance Junction−to−Ambient
RJA
35
Operating Junction Temperature Range
TJ
0 to +150
°C
Operating Ambient Temperature Range
TA
0 to +70
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Moisture Sensitivity Level
MSL
2.0
−
Electro Static Discharge (ESD)
Human Body Model
Machine Model
HBM
MM
2.0
200
kV
V
°C/W
1. All voltages are with respect to AGND (Pin 6) and PGND (Pin 16).
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NCP5203
ELECTRICAL CHARACTERISTICS (5VDUAL = 5.0 V, TA = 0 to 70°C)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Supply Voltage
5VDUAL Operating Voltage
−
4.5
5.0
5.5
V
BST Operating Voltage
−
4.0
10
13.2
V
Quiescent Supply Current (5VDUAL)
−
−
5.0
10
mA
Shutdown Current
VDDQEN = 0 V, VTTEN = 0 V
−
−
1.0
mA
3.6
3.95
4.3
V
Supply Current
Undervoltage Monitor
5VDUAL UVLO Lower Threshold
Falling Edge
5VDUAL UVLO Hysteresis
−
−
0.2
−
V
(Note 2)
−
150
−
C
1.225
1.232
1.25
1.25
1.275
1.268
V
−
−
1.0
µA
262.5
300
337.5
kHz
500
600
700
kHz
Thermal Shutdown
Thermal Trip Point
VDDQ Switching Regulator
FBDDQ Feedback Voltage, Control
Loop in Regulation
TA = 0 to 70C
TA = 25C
Feedback Input Current
VFBDDQ = 1.25 V
Oscillator Frequency in S0 Mode
VDDQEN = VTTEN = 5 V
Oscillator Frequency in S3 Mode
VDDQEN = 5 V, VTTEN = 0 V
Ramp−Amplitude Voltage
At Max Duty Cycle
−
1.25
−
V
OCDDQ Pin Current Sink
VOCDDQ = 4.0 V, TA = 25C
23
35
47
µA
OCDDQ Pin Current Sink Temperature
Coefficient
(Note 2)
−
3200
−
ppm/C
Minimum Duty Cycle
−
0
−
−
%
Maximum Duty Cycle
−
−
90
−
%
Soft−start Current
DDQEN = 5.0 V; VSS = 0 V
3.5
5.0
6.5
µA
Overvoltage Trip Threshold
With respect to Error Comparator Threshold
115
130
−
%
Undervoltage Trip Threshold
With respect to Error Comparator Threshold
−
65
75
%
DC Gain
(Note 2)
−
70
−
dB
Unity Gain Bandwidth
COMP_GND = 220 nF, 1.0 in series (Note 2)
−
2.0
−
MHz
Slew Rate
COMP_GND = 10 pF (Note 2)
−
8.0
−
V/µS
TGDDQ Gate Pull−HIGH Resistance
IOUT = 400 mA, VBST = 10 V
−
3.5
−
TGDDQ Gate Pull−LOW Resistance
IOUT = 400 mA, VBST = 10 V
−
2.5
−
BGDDQ Gate Pull−HIGH Resistance
IOUT = 400 mA, VBST = 10 V
−
3.5
−
BGDDQ Gate Pull−LOW Resistance
IOUT = 400 mA, VBST = 10 V
−
1.3
−
Error Amplifier
Gate Drivers
2. Guaranteed by design, not tested in production.
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NCP5203
ELECTRICAL CHARACTERISTICS(continued) (5VDUAL = 5.0 V, TA = 0 to 70°C)
Characteristic
Test Conditions
Min
Typ
Max
−30
−
−
−
−
30
Unit
VTT Active Terminator
VTT with Respect to REFSNS
REFSNS – VTT,
IOUT = 0 to 2.0 A (Sink Current)
IOUT = 0 to –2.0 A (Source Current)
mV
Source Current Limit
−
−
−2.5
−2.05
A
Sink Current Limit
−
2.05
2.75
−
A
VDDQEN Pin Threshold High
−
1.4
−
−
V
VDDQEN Pin Threshold Low
−
−
−
0.5
V
VDDQEN Pin Input Current
VDDQEN = 5 V
−
5.0
−
µA
VTTEN Pin Threshold High
−
1.4
−
−
V
VTTEN Pin Threshold Low
−
−
−
0.5
V
VTTEN Pin Input Current
VDDQEN = VTTEN = 5 V
−
5.0
−
µA
PGOOD Pin ON Resistance
I_PGOOD = 5.0 mA
−
80
−
PGOOD Pin OFF Current
−
−
−
1.0
µA
Control Section
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NCP5203
DETAILED OPERATING DESCRIPTION
General
fixed frequency Ramp waveform derived from the internal
oscillator to generate a pulse−width−modulated signal.
This PWM signal drives the external N−Channel Power
FETs via the TGDDQ and BGDDQ pins. External inductor
L and capacitor COUT1 filter the output. The VDDQ
output voltage ramps up at a pre−defined soft−start rate
each time the IC exits S5. When in normal mode, and
regulation of VDDQ is detected, signal INREGDDQ will
go high to notify the control logic block.
For enhanced efficiency, an active synchronous switch is
used to eliminate the conduction loss contributed by the
forward voltage of a diode or Schottky diode rectifier.
Adaptive non−overlap timing control of the
complementary gate drive output signals is provided to
reduce shoot−through current.
The NCP5203 2−in−1 DDR Power Controller combines
the efficiency of a VDDQ PWM controller with the
simplicity of a linear regulator for VTT termination. Both
VDDQ and VTT outputs can be user adjusted.
The inclusion of both VDDQ and VTT power good
voltage monitors, soft−start, VDDQ overvoltage and
undervoltage detection, supply undervoltage monitors, and
thermal shutdown, makes this device a total power solution
for high current DDR memory systems.
VDDQ Switching Regulator in Normal (S0) Mode
The VDDQ regulator is a switching synchronous
rectification buck controller directly driving two external
N−Channel power FETs. An external resistor divider sets
the nominal output voltage. The control architecture is
voltage mode fixed frequency PWM (300 kHz ± 12.5%)
with external compensation. The VDDQ output voltage is
divided down and fed back to the inverting input of an
internal amplifier through the FBDDQ pin to close the loop
at VDDQ = VFBDDQ × (1 + R2/R1). This amplifier
compares the feedback voltage with an internal VREF1
(= 1.25 V) to generate an error signal for the PWM
comparator. This error signal is further compared with a
Tolerance of VDDQ
The tolerance of VFBDDQ and the ratio of the external
resistor divider R2/R1 both impact the precision of VDDQ.
When the control loop is in regulation, VDDQ = VFBDDQ
× (1 + R2/R1). With a worst case (over temperature)
VFBDDQ tolerance of ±2%, a worst case range of 2.5% for
VDDQ will be assured if the ratio R2/R1 is specified as
0.98985 ±1%.
Table 1. State, Operation, Input and Output Condition Table
USER INPUTS
OPERATING CONDITIONS
OUTPUT CONDITIONS
MODE
5VDUAL
UVLO
VDDQEN
VTTEN
VDDQ
VTT
TGDDQ
BGDDQ
PGOOD
S5
Low
X
X
H−Z
H−Z
Low
Low
Low
S0
High
High
High
Normal
Normal
Normal
(300 kHz)
Normal
(300 kHz)
H−Z
S3
High
High
Low
Standby
H−Z
Normal
(600 kHz)
Low
Low
S5
High
Low
X
H−Z
H−Z
Low
Low
Low
VDDQ Regulator in Standby Mode (S3)
During S3, the VDDQ regulator operates in
asynchronous switch mode. The switching frequency is
increased to 600 kHz, the low−side FET is disabled, and the
body diode of the low side FET is used. The regulator will
operate in discontinuous conduction mode (DCM) and the
switching frequency is doubled to reduce peak conduction
current.
across this resistor. This voltage is compared to the voltage
at SWDDQ pin when the TGDDQ is high after a fixed
blanking period of 500 ns to avoid false current limit
triggering. When the voltage at SWDDQ is lower than
OCDDQ, an overcurrent condition occurs, upon which all
outputs will be latched off to protect against a
short−to−ground condition on SWDDQ or VDDQ. The IC
will be reset once 5VDUAL or VDDQEN is cycled.
VDDQ Regulator Fault Protection
VDDQ Regulator Feedback Compensation
During S0 and S3, the external resistor (RL1) sets the
current limit for the high−side switch. An internal 35 µA
current sink at OCDDQ pin establishes a voltage drop
The recommended compensation network is shown in
Figure 2.
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NCP5203
VTT Active Terminator in Normal Mode (S0)
VTT Active Terminator Thermal Consideration
The VTT active terminator is a two−quadrant linear
regulator with two internal N−channel power FETs to
provide transient current sink and source capability up to
2.0 A. It is activated in normal mode in S0 when the
VTTEN pin is high and VDDQ is in regulation. When in the
S0 state and VTT is in regulation, signal INREGVTT will
go high to notify the control logic block. The VTT regulator
is powered from VDDQ with the internal FET’s gate drive
power derived from 5VDUAL. The VTT output voltage
can be adjusted by using an external resistor divider
connected to the REFSNS pin. This regulator is stable with
any value of output capacitor greater than 470 F, and is
insensitive to ESR ranging from 2.0 mΩ to 400 mΩ.
The VTT terminator is designed to handle large transient
output currents. If large currents are required for very long
duration, then care should be taken to ensure the maximum
junction temperature is not exceed. The 5x6 QFN−18 has
a thermal resistance of 35C/W (dependent on air flow,
grade of copper, and number of vias). In order to take full
advantage of this thermal capability, the thermal pad
underneath must be soldered directly to a PCB metal
substrate.
Supply Voltages Undervoltage Monitor
The IC continuously monitors 5VDUAL through the
5VDUAL pin. 5VDLGD is set high if 5VDUAL is higher
than its preset threshold (derived from VREF with
hysteresis). The IC will later latch off if 5VDUAL is in S0
providing both VDDQEN and VTTEN remain high.
VTT Active Terminator in Normal Mode (S3)
VTT output is high−impedance in S3 mode.
VTT Active Terminator Fault Protection
Thermal Shutdown
To provide protection for the internal FETs,
bi−directional current limit is implemented, preset at 2.4 A
magnitude. This current limit is also used as constant
current source during VTT startup.
If the chip junction temperature exceeds 150C, the
entire IC will shutdown. The IC resumes normal operation
only after 5VDUAL or VDDQEN is cycled.
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NCP5203
5VDUAL
VDDQEN
VTTEN
VTTEN IS
DON’T CARE
IN S5
Soft
Start
VDDQ
10ms
VTT in H−Z
VTT
thold ∼ 200 µs
thold ∼ 200 µs
PGOOD
OPERATING
MODE
S0
S5
5VDUAL
comes out
of UVLO
S3
PGOOD goes HIGH.
INREGVTT goes HIGH.
INREGDDQ goes HIGH,
VTT goes into normal mode.
VDDQEN goes
HIGH, VDDQ is
activated. VTTEN
goes HIGH, VTT is
not activated until
VDDQ is Good.
S0
VTTEN goes LOW to
activate S3 mode and
to turn off VTT, then
INREGVTT goes LOW,
PGOOD goes LOW.
PGOOD goes
HIGH.
INREGVTT
goes HIGH.
VTTEN goes HIGH,
VTT goes into
normal mode.
Figure 3. Power−Up and Power−Down Timing Diagram
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S5
Both VDDQEN and
VTTEN go LOW to
trigger S5 mode; VDDQ
and VTT is disabled,
then INREGDDQ and
INREGVTT go LOW,
PGOOD goes LOW.
NCP5203
18−LEAD QFN, 5 x 6 mm
MN SUFFIX
CASE 505−01
ISSUE A
A
D
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. DIMENSIONS IN MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINALS AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
B
PIN 1 LOCATION
E
0.15 C
DIM
A
A1
A2
A3
b
D
D2
E
E2
e
K
L
0.15 C
0.10 C
A2
A
0.08 C
A1
A3
C
REF
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.65
0.75
0.20 REF
0.23
0.28
6.00 BSC
3.98
4.28
5.00 BSC
2.98
3.28
0.50 BSC
0.20
−−−
0.50
0.60
SEATING
PLANE
D2
18 X
L
18 X
e
1
9
E2
K
18
10
18 X b
0.10 C A B
0.05 C
NOTE 3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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NCP5203/D