CYDM064B16, CYDM128B16, CYDM256B16 1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL® Dual-Port Static RAM Features ■ True dual-ported memory cells that allow simultaneous access of the same memory location ■ Expandable data bus to 32 bits with Master or Slave chip select when using more than one device ■ 4, 8, or 16K × 16 organization ■ On-chip arbitration logic ■ Ultra Low operating power ❐ Active: ICC = 15 mA (typical) at 55 ns ❐ Standby: ISB3 = 2 μA (typical) ■ Semaphores included to permit software handshaking between ports ■ Input read registers and output drive registers ■ Small footprint: Available in a 6x6 mm 100-pin Pb-free vfBGA ■ INT flag for port-to-port communication ■ Port independent 1.8V, 2.5V, and 3.0V IOs ■ Separate upper-byte and lower-byte control ■ Full asynchronous operation ■ Industrial temperature ranges ■ Automatic power down ■ Pin select for Master or Slave Selection Guide for VCC = 1.8V CYDM256B16, CYDM128B16, CYDM064B16 Parameter (-55) Port IO Voltages (P1-P2) Unit 1.8V -1.8V V Maximum Access Time 55 ns Typical Operating Current 15 mA Typical Standby Current for ISB1 2 μA Typical Standby Current for ISB3 2 μA Selection Guide for VCC = 2.5V CYDM256B16, CYDM128B16, CYDM064B16 Parameter (-55) Port IO Voltages (P1-P2) Unit 2.5V-2.5V V Maximum Access Time 55 ns Typical Operating Current 28 mA Typical Standby Current for ISB1 6 μA Typical Standby Current for ISB3 4 μA Selection Guide for VCC = 3.0V CYDM256B16, CYDM128B16, CYDM064B16 Parameter (-55) Port IO Voltages (P1-P2) Unit 3.0V-3.0V V Maximum Access Time 55 ns Typical Operating Current 42 mA Typical Standby Current for ISB1 7 μA Typical Standby Current for ISB3 6 μA Cypress Semiconductor Corporation Document #: 001-00217 Rev. *F • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised July 31, 2008 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Logic Block Diagram [1, 2] IO[15:0]R IO[15:0]L UBR UBL LBL LBR IO Control IO Control 16K X 16 Dual Ported Array Address Decode Address Decode A[13:0]L CE L A [13:0]R CE R Interrupt Arbitration Semaphore OE L R/W L SEML BUSY L INTL Mailboxes CEL OEL R/WL INTR OE R R/W R SEMR BUSY R M/S Input Read Register and Output Drive Register IRR0 ,IRR1 CE R OE R R/W R ODR0 - ODR4 SFEN Notes 1. A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices. 2. BUSY is an output in master mode and an input in slave mode. Document #: 001-00217 Rev. *F Page 2 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Pinouts Figure 1. Ball Diagram - 100-Ball 0.5 mm Pitch BGA (Top View) [3, 4, 5, 6, 7] CYDM064B16, CYDM128B16, CYDM256B16 1 2 3 4 5 6 7 8 9 10 A A5R A8R A11R UBR VSS SEMR IO15R IO12R IO10R VSS A B A3R A4R A7R A9R CER R/WR OER VDDIOR IO9R IO6R B C A0R A1R A2R A6R LBR IRR1[6] IO14R IO11R IO7R VSS C ODR4 ODR2 BUSYR INTR A10R A12R[3] IO13R IO8R IO5R IO2R D IO1R VSS E D ODR3 INTL VSS VSS IO4R VDDIOR F SFEN ODR1 BUSYL A1L VCC VSS IO3R IO0R IO15L VDDIOL F G ODR0 A2L A5L A12L[3] OEL IO3L IO11L IO12L IO14L IO13L G H A0L A4L A9L LBL CEL IO1L VDDIOL NC[7] NC[7] IO10L H J A3L A7L A10L IRR0[5] VCC VSS IO4L IO6L IO8L IO9L J K A6L A8L A11L UBL SEML R/WL IO0L IO2L IO5L IO7L K 1 2 3 4 5 6 7 8 9 10 E VSS M/S Notes 3. A12L and A12R are NC pins for CYDM064B16. 4. IRR functionality is not supported for the CYDM256B16 device. 5. This pin is A13L for CYDM256B16 device. 6. This pin is A13R for CYDM256B16 device. 7. Leave this pin unconnected. No trace or power component can be connected to this pin. Document #: 001-00217 Rev. *F Page 3 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Table 1. Pin Definitions - 100-Ball 0.5 mm Pitch BGA (CYDM064B16, CYDM128B16, CYDM256B16) Left Port Right Port Description CEL CER Chip Enable R/WL R/WR Read or Write Enable OEL OER Output Enable A0L–A13L A0R–A13R Address (A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices) IO0L–IO15L IO0R–IO15R Data Bus Input or Output for x16 devices SEML SEMR Semaphore Enable UBL UBR Upper Byte Select (IO8–IO15) LBL LBR Lower Byte Select (IO0–IO7) INTL INTR Interrupt Flag BUSYL BUSYR Busy Flag IRR0, IRR1 ODR0-ODR4 SFEN Input Read Register for CYDM064B16 and CYDM128B16 A13L and A13R for CYDM256B16. Output Drive Register. These outputs are Open Drain. Special Function Enable M/S Master or Slave Select VCC Core Power GND Ground VDDIOL Left Port IO Voltage VDDIOR Right Port IO Voltage NC Document #: 001-00217 Rev. *F No Connect. Leave this pin Unconnected. Page 4 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Functional Description The CYDM256B16, CYDM128B16, and CYDM064B16 are low power CMOS 4K, 8K,16K x 16 dual-port static RAMs. Arbitration schemes are included on the devices to handle situations when multiple processors access the same piece of data. Two ports are provided that permit independent, asynchronous access for reads and writes to any location in memory. The devices can be used as standalone 16-bit dual-port static RAMs or multiple devices can be combined to function as a 32-bit or wider master/slave dual-port static RAM. An M/S pin is provided for implementing 32-bit or wider memory applications without the need for separate master and slave devices or additional discrete logic. Application areas include interprocessor or multiprocessor designs, communications status buffering, and dual-port video or graphics memory. Each port has independent control pins: Chip Enable (CE), Read or Write Enable (R/W), and Output Enable (OE). Two flags are provided on each port (BUSY and INT). BUSY indicates that the port is trying to access the same location currently being accessed by the other port. The Interrupt flag (INT) permits communication between ports or systems through a mail box. The semaphores are used to pass a flag or token, from one port to the other, to indicate that a shared resource is in use. The semaphore logic consists of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared resource is in use. An automatic power down feature is controlled independently on each port by a Chip Enable (CE) pin. The CYDM256B16, CYDM128B16, CYDM064B16 are available in 100-ball 0.5 mm pitch Ball Grid Array (BGA) packages. Power Supply The core voltage (VCC) can be 1.8V, 2.5V, or 3.0V, as long as it is lower than or equal to the IO voltage. Each port can operate on independent IO voltages. This is determined by what is connected to the VDDIOL and VDDIOR pins. The supported IO standards are 1.8V or 2.5V LVCMOS and 3.0V LVTTL. Read Operation When reading the device, the user must assert both the OE and CE pins. Data is available tACE after CE or tDOE after OE is asserted. If the user wishes to access a semaphore flag, then the SEM pin must be asserted instead of the CE pin, and OE must also be asserted. Interrupts The upper two memory locations may be used for message passing. The highest memory location (FFF for the CYDM064B16, 1FFF for the CYDM128B16, 3FFF for the CYDM256B16) is the mailbox for the right port and the second-highest memory location (FFE for the CYDM064B16, 1FFE for the CYDM128B16, 3FFE for the CYDM256B16) is the mailbox for the left port. When one port writes to the other port’s mailbox, an interrupt is generated to the owner. The interrupt is reset when the owner reads the contents of the mailbox. The message is user-defined. Each port can read the other port’s mailbox without resetting the interrupt. The active state of the busy signal (to a port) prevents the port from setting the interrupt to the winning port. Also, an active busy to a port prevents that port from reading its own mailbox and, thus, resetting the interrupt to it. If an application does not require message passing, do not connect the interrupt pin to the processor’s interrupt request input pin. On power up, an initialization program must be run and the interrupts for both ports must be read to reset them. The operation of the interrupts and their interaction with Busy are summarized in Table 3 on page 7. Busy The CYDM256B16, CYDM128B16, and CYDM064B16 provide on-chip arbitration to resolve simultaneous memory location access (contention). If both port CEs are asserted and an address match occurs within tPS of each other, the busy logic determines which port has access. If tPS is violated, one port definitely gains permission to the location. However, which port gets this permission cannot be predicted. BUSY is asserted tBLA after an address match or tBLC after CE is taken LOW. Write Operation Master/Slave Data must be set up for a duration of tSD before the rising edge of R/W to guarantee a valid write. A write operation is controlled by either the R/W pin (see Figure 5 on page 18) or the CE pin (see Figure 6 on page 18). Required inputs for noncontention operations are summarized in Table 2 on page 7. An M/S pin is provided to expand the word width by configuring the device as either a master or a slave. The BUSY output of the master is connected to the BUSY input of the slave. This allows the device to interface to a master device with no external components. Writing to slave devices must be delayed until after the BUSY input has settled (tBLC or tBLA). Otherwise, the slave chip may begin a write cycle during a contention situation. When tied HIGH, the M/S pin allows the device to be used as a master and, as a result, the BUSY line is an output. BUSY can then be used to send the arbitration outcome to a slave. If a location is being written to by one port and the opposite port attempts to read that location, a port-to-port flowthrough delay must occur before the data is read on the output. Otherwise, the data read is not deterministic. Data is valid on the port tDDD after the data is presented on the other port. Document #: 001-00217 Rev. *F Page 5 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Input Read Register The Input Read Register (IRR) captures the status of two external input devices that are connected to the Input Read pins. The contents of the IRR read from address x0000 from either port. During reads from the IRR, DQ0 and DQ1 are valid bits and DQ<15:2> are don’t care. Writes to address x0000 are not allowed from either port. Address x0000 is not available for standard memory accesses when SFEN = VIL. When SFEN = VIH, address x0000 is available for memory accesses. The inputs are 1.8V/2.5V LVCMOS or 3.0V LVTTL, depending on the core voltage supply (VCC). Refer to Table 4 on page 8 for Input Read Register operation. IRR is not available in the CYDM256B16, because the IRR pins are used as extra address pins A13L and A13R. Output Drive Register The Output Drive Register (ODR) determines the state of up to five external binary state devices by providing a path to VSS for the external circuit. These outputs are Open Drain. The five external devices can operate at different voltages (1.5V ≤ VDDIO ≤ 3.5V) but the combined current cannot exceed 40 mA (8 mA max for each external device). The status of the ODR bits are set using standard write accesses from either port to address x0001 with a “1” corresponding to on and “0” corresponding to off. The status of the ODR bits can be read with a standard read access to address x0001. When SFEN = VIL, the ODR is active and address x0001 is not available for memory accesses. When SFEN = VIH, the ODR is inactive and address x0001 can be used for standard accesses. During reads and writes to ODR DQ<4:0> are valid and DQ<15:5> are don’t care. Refer to Table 5 on page 8 for Output Drive Register operation. Semaphore Operation The CYDM256B16, CYDM128B16, and CYDM064B16 provide eight semaphore latches, which are separate from the dual-port memory locations. Semaphores are used to reserve resources that are shared between the two ports. The state of the semaphore indicates that a resource is in use. For example, if the left port wants to request a given resource, it sets a latch by writing a zero to a semaphore location. The left port then verifies its success in setting the latch by reading it. After writing to the semaphore, SEM or OE must be deasserted for tSOP before attempting to read the semaphore. The semaphore value is available tSWRD + tDOE after the rising edge of the semaphore write. If the left port is successful (reads a zero), it assumes control of the shared resource. Otherwise (reads a one), it assumes the right port has control and continues to poll the semaphore. When the right side has relinquished control of the semaphore (by writing a one), the left side succeeds in gaining control of the semaphore. If the left side no longer requires the semaphore, a one is written to cancel its request. Document #: 001-00217 Rev. *F Semaphores are accessed by asserting SEM LOW. The SEM pin functions as a chip select for the semaphore latches (CE must remain HIGH during SEM LOW). A0–2 represents the semaphore address. OE and R/W are used in the same manner as a normal memory access. When writing or reading a semaphore, the other address pins have no effect. When writing to the semaphore, only IO0 is used. If a zero is written to the left port of an available semaphore, a one appears at the same semaphore address on the right port. That semaphore can now only be modified by the side showing zero (the left port in this case). If the left port now relinquishes control by writing a one to the semaphore, the semaphore is set to one for both sides. However, if the right port requests the semaphore (written a zero) while the left port has control, the right port immediately owns the semaphore as soon as the left port releases it. Table 6 on page 8 shows sample semaphore operations. When reading a semaphore, all sixteen data lines output the semaphore value. The read value is latched in an output register to prevent the semaphore from changing state during a write from the other port. If both ports attempt to access the semaphore within tSPS of each other, the semaphore is definitely obtained by one side or the other, but there is no guarantee which side controls the semaphore. On power up, both ports must write “1” to all eight semaphores. Architecture The CYDM256B16, CYDM128B16, and CYDM064B16 consist of an array of 4K, 8K, or 16K words of 16 dual-port RAM cells, IO and address lines, and control signals (CE, OE, R/W). These control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes or reads to the same location, a BUSY pin is provided on each port. Two Interrupt (INT) pins can be used for port-to-port communication. Two Semaphore (SEM) control pins are used to allocate shared resources. With the M/S pin, the devices can function as a master (BUSY pins are outputs) or as a slave (BUSY pins are inputs). The devices also have an automatic power down feature controlled by CE. Each port is provided with its own output enable control (OE), which allows data to be read from the device. Page 6 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Table 2. NonContending Read/Write Inputs Outputs UB LB IO8–IO15 SEM Operation IO0–IO7 CE R/W OE H X X X X H High Z High Z Deselected: Power down X X X H H H High Z High Z Deselected: Power down L L X L H H Data In High Z Write to Upper Byte Only L L X H L H High Z Data In Write to Lower Byte Only L L X L L H Data In Data In Write to Both Bytes L H L L H H Data Out High Z Read Upper Byte Only L H L H L H High Z Data Out Read Lower Byte Only L H L L L H Data Out Data Out Read Both Bytes X X H X X X High Z High Z Outputs Disabled H H L X X L Data Out Data Out Read Data in Semaphore Flag X H L H H L Data Out Data Out Read Data in Semaphore Flag H X X X L Data In Data In Write DIN0 into Semaphore Flag X X H H L Data In Data In Write DIN0 into Semaphore Flag L X X L X L Not Allowed L X X X L L Not Allowed Table 3. Interrupt Operation Example (Assumes BUSYL = BUSYR = HIGH)[8] Left Port Function R/WL CEL Right Port OEL A0L–13L INTL R/WR CER OER A0R–13R INTR X X X X X L[10] Set Right INTR Flag L L X 3FFF[11] Reset Right INTR Flag X X X X X X L L 3FFF[11] H[9] Set Left INTL Flag X X X X L[9] L L X 3FFE[11] X Reset Left INTL Flag X L L 3FFE[11] H[10] X X X X X Notes 8. See Interrupts Functional Description for specific highest memory locations by device. 9. If BUSYR = L, then no change. 10. If BUSYL = L, then no change. 11. See section Functional Description on page 5 for specific addresses by device. Document #: 001-00217 Rev. *F Page 7 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Table 4. Input Read Register Operation[12, 15] SFEN H L CE L L R/W OE H L H L UB LB L L ADDR IO0–IO1 [13] x0000-Max VALID X L x0000 ADDR [14] VALID IO2–IO15 [13] VALID X Mode Standard Memory Access IRR Read Table 5. Output Drive Register [16] SFEN CE R/W OE UB LB IO0–IO4 IO5–IO15 Mode H L H X[17] L[13] L[13] L L L X X L x0001 VALID[14] X ODR Write[16, 18] L L H L X L x0001 VALID[14] X ODR Read[16] x0000-Max VALID[13] VALID[13] Standard Memory Access Table 6. Semaphore Operation Example Function IO0–IO15 Left IO0–IO15 Right 1 1 Semaphore free Left port writes 0 to semaphore 0 1 Left Port has semaphore token Right port writes 0 to semaphore 0 1 No change. Right side has no write access to semaphore. Left port writes 1 to semaphore 1 0 Right port obtains semaphore token Left port writes 0 to semaphore 1 0 No change. Left port has no write access to semaphore. Right port writes 1 to semaphore 0 1 Left port obtains semaphore token Left port writes 1 to semaphore 1 1 Semaphore free No action Status Right port writes 0 to semaphore 1 0 Right port has semaphore token Right port writes 1 to semaphore 1 1 Semaphore free Left port writes 0 to semaphore 0 1 Left port has semaphore token Left port writes 1 to semaphore 1 1 Semaphore free Notes 12. SFEN = VIL for IRR reads 13. UB or LB = VIL. If LB = VIL, then DQ<7:0> are valid. If UB = VIL then DQ<15:8> are valid. 14. LB must be active (LB = VIL) for these bits to be valid. 15. SFEN active when either CEL = VIL or CER = VIL. It is inactive when CEL = CER = VIH. 16. SFEN = VIL for ODR reads and writes. 17. Output enable must be low (OE = VIL) during reads for valid data to be output. 18. During ODR writes data are also written to the memory. Document #: 001-00217 Rev. *F Page 8 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Maximum Ratings Static Discharge Voltage .......................................... > 2000V Latch-up Current ................................................... > 200 mA Exceeding maximum ratings[19] may shorten the useful life of the device. User guidelines are not tested. Operating Range Storage Temperature ................................. –65°C to +150°C Range Ambient Temperature with Power Applied............................................. –55°C to +125°C Commercial Ambient Temperature VCC 0°C to +70°C 1.8V ± 100 mV 2.5V ± 100 mV 3.0V ± 300 mV –40°C to +85°C 1.8V ± 100 mV 2.5V ± 100 mV 3.0V ± 300 mV Supply Voltage to Ground Potential ............... –0.5V to +3.3V Industrial DC Voltage Applied to Outputs in High-Z State.......................... –0.5V to VCC + 0.5V DC Input Voltage[20] ...............................–0.5V to VCC + 0.5V Output Current into Outputs (LOW) .............................90 mA Electrical Characteristics for VCC = 1.8V Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter VOH VOL VOL ODR VIH VIL IOZ ICEX ODR IIX Description -55 Unit P1 IO Voltage P2 IO Voltage Min Output HIGH Voltage (IOH = –100 μA) 1.8V (any port) VDDIO – 0.2 V Output HIGH Voltage (IOH = –2 mA) 2.5V (any port) 2.0 V Output HIGH Voltage (IOH = –2 mA) 3.0V (any port) 2.1 Output LOW Voltage (IOL = 100 μA) 1.8V (any port) 0.2 V Output HIGH Voltage (IOL = 2 mA) 2.5V (any port) 0.4 V Output HIGH Voltage (IOL = 2 mA) 3.0V (any port) 0.4 V ODR Output LOW Voltage (IOL = 8 mA) 1.8V (any port) 0.2 V 2.5V (any port) 0.2 V 3.0V (any port) 0.2 V Input HIGH Voltage Input LOW Voltage Output Leakage Current ODR Output Leakage Current. VOUT = VDDIO Input Leakage Current Typ. Max V 1.8V (any port) 1.2 VDDIO + 0.2 V 2.5V (any port) 1.7 VDDIO + 0.3 V 3.0V (any port) 2.0 VDDIO + 0.2 V 1.8V (any port) –0.2 0.4 V 2.5V (any port) –0.3 0.6 V 3.0V (any port) –0.2 0.7 V 1.8V 1.8V –1 1 μA 2.5V 2.5V –1 1 μA 3.0V 3.0V –1 1 μA 1.8V 1.8V –1 1 μA 2.5V 2.5V –1 1 μA 3.0V 3.0V –1 1 μA 1.8V 1.8V –1 1 μA 2.5V 2.5V –1 1 μA 3.0V 3.0V –1 1 μA Notes 19. The voltage on any input or IO pin can not exceed the power pin during power up. 20. Pulse width < 20 ns. Document #: 001-00217 Rev. *F Page 9 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Electrical Characteristics for VCC = 1.8V (continued) Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 P1 IO Voltage P2 IO Voltage Unit Min Typ. Max ICC Operating Current (VCC = Max., IOUT = 0 mA) Outputs Disabled Ind. 1.8V 1.8V 15 25 mA ISB1 Standby Current (Both Ports TTL Ind. Level) CEL and CER ≥ VCC – 0.2, SEML = SEMR = VCC – 0.2, f = fMAX 1.8V 1.8V 2 6 μA ISB2 Standby Current (One Port TTL Level) CEL | CER ≥ VIH, f = fMAX Ind. 1.8V 1.8V 8.5 14 mA ISB3 Standby Current (Both Ports CMOS Ind. Level) CEL and CER ≥ VCC − 0.2V, SEML and SEMR > VCC – 0.2V, f = 0 1.8V 1.8V 2 6 μA ISB4 Standby Current (One Port CMOS Ind. Level) CEL | CER ≥ VIH, f = fMAX[21] 1.8V 1.8V 8.5 14 mA Electrical Characteristics for VCC = 2.5V Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Unit P1 IO Voltage P2 IO Voltage Min VOH Output HIGH Voltage (IOH = –2 mA) 2.5V (any port) 2.0 Typ. 3.0V (any port) 2.1 VOL Output LOW Voltage (IOL = 2 mA) 2.5V (any port) 0.4 V 3.0V (any port) 0.4 V VOL ODR ODR Output LOW Voltage (IOL = 8 mA) 2.5V (any port) 0.2 V VIH Input HIGH Voltage 2.5V (any port) VIL Input LOW Voltage 3.0V (any port) IOZ Output Leakage Current 2.5V 3.0V 3.0V ICEX ODR ODR Output Leakage Current. VOUT = VCC 2.5V 2.5V 3.0V 3.0V IIX Input Leakage Current 2.5V 2.5V 3.0V 3.0V –1 ICC Operating Current (VCC = Max., IOUT = 0 mA) Outputs Disabled 2.5V 2.5V V V 3.0V (any port) Ind. Max 0.2 V 1.7 VDDIO + 0.3 V 3.0V (any port) 2.0 VDDIO + 0.2 V 2.5V (any port) –0.3 0.6 V –0.2 0.7 V –1 1 μA –1 1 μA –1 1 μA –1 1 μA –1 1 μA 2.5V 28 1 μA 40 mA Notes 21. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3. Document #: 001-00217 Rev. *F Page 10 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Electrical Characteristics for VCC = 2.5V (continued) Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 P1 IO Voltage P2 IO Voltage Unit Min Typ. Max ISB1 Standby Current (Both Ports TTL Ind. Level) CEL and CER ≥ VCC – 0.2, SEML= SEMR = VCC – 0.2, f = fMAX 2.5V 2.5V 6 8 μA ISB2 Standby Current (One Port TTL Level) CEL | CER ≥ VIH, f = fMAX Ind. 2.5V 2.5V 18 25 mA ISB3 Standby Current (Both Ports CMOS Ind. Level) CEL and CER ≥ VCC − 0.2V, SEML and SEMR > VCC – 0.2V, f = 0 2.5V 2.5V 4 6 μA ISB4 Standby Current (One Port CMOS Level) CEL | CER ≥ VIH, f = fMAX[21] 2.5V 2.5V 18 25 mA Ind. Electrical Characteristics for 3.0V Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Unit P1 IO Voltage P2 IO Voltage Min 2.1 VOH Output HIGH Voltage (IOH = –2 mA) 3.0V (any port) VOL Output LOW Voltage (IOL = 2 mA) 3.0V (any port) Typ. Max V 0.4 V VOL ODR ODR Output LOW Voltage (IOL = 8 mA) 3.0V (any port) 0.2 V VIH Input HIGH Voltage 3.0V (any port) 2.0 VDDIO + 0.2 V 3.0V (any port) VIL Input LOW Voltage –0.2 0.7 V IOZ Output Leakage Current 3.0V 3.0V –1 1 μA ICEX ODR ODR Output Leakage Current. VOUT = VCC 3.0V 3.0V –1 1 μA IIX Input Leakage Current 3.0V 3.0V –1 1 μA ICC Operating Current (VCC = Max., IOUT = 0 mA) Outputs Disabled Ind. 3.0V 3.0V 42 60 mA ISB1 Standby Current (Both Ports TTL Ind. Level) CEL and CER ≥ VCC – 0.2, SEML = SEMR = VCC – 0.2, f = fMAX 3.0V 3.0V 7 10 μA ISB2 Standby Current (One Port TTL Level) CEL | CER ≥ VIH, f = fMAX Ind. 3.0V 3.0V 25 35 mA ISB3 Standby Current (Both Ports CMOS Ind. Level) CEL and CER ≥ VCC − 0.2V, SEML and SEMR > VCC – 0.2V, f = 0 3.0V 3.0V 6 8 μA ISB4 Standby Current (One Port CMOS Level) CEL | CER ≥ VIH, f = fMAX[21] 3.0V 3.0V 25 35 mA Max Unit 9 pF 10 pF Ind. Capacitance[22] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 3.0V Note 22. Tested initially and after any design or process changes that may affect these parameters. Document #: 001-00217 Rev. *F Page 11 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 AC Test Loads and Waveforms 3.0V/2.5V/1.8V 3.0V/2.5V/1.8V R1 RTH = 6 kΩ OUTPUT OUTPUT R1 OUTPUT C = 30 pF C = 30 pF R2 C = 5 pF R2 VTH = 0.8V (a) Normal Load (b) Thévenin Equivalent (Load 1) (c) Three-State Delay (Load 2) (Used for tLZ, tHZ, tHZWE, and tLZWE including scope and jig) ALL INPUT PULSES 3.0V/2.5V 1.8V R1 1022Ω 13500Ω 1.8V R2 792Ω 10800Ω GND 10% ≤ 3 ns 90% 90% 10% ≤ 3 ns Switching Characteristics for VCC = 1.8V Over the Operating Range[23] CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Min Unit Max Read Cycle tRC Read Cycle Time tAA Address to Data Valid tOHA Output Hold From Address Change tACE[24] CE LOW to Data Valid 55 ns tDOE OE LOW to Data Valid 30 ns tLZOE [25, 26, 27] tHZOE[25, 26, 27] tLZCE[25, 26, 27] tHZCE[25, 26, 27] tPU[27] tPD[27] tABE[24] OE Low to Low Z 55 55 5 CE LOW to Power up ns 25 5 CE HIGH to High Z ns ns 5 OE HIGH to High Z CE LOW to Low Z ns ns ns 25 0 ns ns CE HIGH to Power down 55 ns Byte Enable Access Time 55 ns Notes 23. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC/2, input pulse levels of 0 to VCC, and output loading of the specified IOI/IOH and 30 pF load capacitance. 24. To access RAM, CE = L, UB = L, SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire tSCE time. 25. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE. 26. Test conditions used are Load 3. 27. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform. Document #: 001-00217 Rev. *F Page 12 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Characteristics for VCC = 1.8V (continued) Over the Operating Range[23] CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Min Unit Max Write Cycle tWC Write Cycle Time 55 ns tSCE[24] CE LOW to Write End 45 ns tAW Address Valid to Write End 45 ns tHA Address Hold From Write End 0 ns tSA[24] Address Setup to Write Start 0 ns tPWE Write Pulse Width 40 ns tSD Data Setup to Write End 30 ns tHD Data Hold From Write End 0 ns tHZWE[26, 27] tLZWE[26, 27] tWDD[28] tDDD[28] R/W LOW to High Z Busy Timing R/W HIGH to Low Z 25 0 ns ns Write Pulse to Data Delay 80 ns Write Data Valid to Read Data Valid 80 ns [29] tBLA BUSY LOW from Address Match 45 ns tBHA BUSY HIGH from Address Mismatch 45 ns tBLC BUSY LOW from CE LOW 45 ns tBHC BUSY HIGH from CE HIGH 45 ns tPS[30] Port Setup for Priority tWB tWH tBDD[31] 5 ns R/W HIGH after BUSY (Slave) 0 ns R/W HIGH after BUSY HIGH (Slave) 35 ns BUSY HIGH to Data Valid 40 ns tINS INT Set Time 45 ns tINR INT Reset Time 45 ns [29] Interrupt Timing Semaphore Timing tSOP SEM Flag Update Pulse (OE or SEM) 15 ns tSWRD SEM Flag Write to Read Time 10 ns tSPS SEM Flag Contention Window 10 ns tSAA SEM Address Access Time 55 ns Notes 28. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform. 29. Test conditions used are Load 2. 30. Add 2ns to this parameter if VCC and VDDIOR are <1.8V, and VDDIOL is >2.5V at temperature <0°C. 31. tBDD is a calculated parameter and is the greater of tWDD – tPWE (actual) or tDDD – tSD (actual). Document #: 001-00217 Rev. *F Page 13 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Characteristics for VCC = 2.5V Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Min Unit Max Read Cycle tRC Read Cycle Time tAA Address to Data Valid tOHA Output Hold From Address Change tACE[24] CE LOW to Data Valid tDOE OE LOW to Data Valid tLZOE [25, 26, 27] OE Low to Low Z 55 ns 55 5 ns ns 55 30 2 ns ns ns tHZOE[25, 26, 27] OE HIGH to High Z tLZCE[25, 26, 27] CE LOW to Low Z tHZCE[25, 26, 27] CE HIGH to High Z tPU[27] CE LOW to Power up tPD[27] CE HIGH to Power down 55 ns tABE[24] Byte Enable Access Time 55 ns 25 2 ns ns 25 0 ns ns Write Cycle tWC Write Cycle Time 55 ns tSCE[24] CE LOW to Write End 45 ns tAW Address Valid to Write End 45 ns tHA Address Hold From Write End 0 ns tSA[24] Address Setup to Write Start 0 ns tPWE Write Pulse Width 40 ns tSD Data Setup to Write End 30 ns tHD Data Hold From Write End 0 ns tHZWE[26, 27] tLZWE[26, 27] tWDD[28] tDDD[28] R/W LOW to High Z R/W HIGH to Low Z 25 0 ns ns Write Pulse to Data Delay 80 ns Write Data Valid to Read Data Valid 80 ns tBLA BUSY LOW from Address Match 45 ns tBHA BUSY HIGH from Address Mismatch 45 ns tBLC BUSY LOW from CE LOW 45 ns tBHC BUSY HIGH from CE HIGH 45 ns tPS[30] Port Setup for Priority Busy Timing [29] 5 ns tWB R/W HIGH after BUSY (Slave) 0 ns tWH R/W HIGH after BUSY HIGH (Slave) 35 ns tBDD[31] BUSY HIGH to Data Valid Document #: 001-00217 Rev. *F 40 ns Page 14 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Characteristics for VCC = 2.5V (continued) Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Min Interrupt Unit Max Timing[29] tINS INT Set Time 45 ns tINR INT Reset Time 45 ns Semaphore Timing tSOP SEM Flag Update Pulse (OE or SEM) 15 ns tSWRD SEM Flag Write to Read Time 10 ns tSPS SEM Flag Contention Window 10 ns tSAA SEM Address Access Time 55 ns Switching Characteristics for VCC = 3.0V Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Min Unit Max Read Cycle tRC Read Cycle Time tAA Address to Data Valid tOHA Output Hold From Address Change tACE[24] CE LOW to Data Valid 55 ns tDOE OE LOW to Data Valid 30 ns tLZOE [25, 26, 27] tHZOE[25, 26, 27] tLZCE[25, 26, 27] tHZCE[25, 26, 27] tPU[27] tPD[27] tABE[24] OE Low to Low Z 55 55 5 CE LOW to Power up ns 25 1 CE HIGH to High Z ns ns 1 OE HIGH to High Z CE LOW to Low Z ns ns ns 25 0 ns ns CE HIGH to Power down 55 ns Byte Enable Access Time 55 ns Write Cycle tWC Write Cycle Time 55 ns tSCE[24] CE LOW to Write End 45 ns tAW Address Valid to Write End 45 ns tHA Address Hold From Write End 0 ns tSA[24] Address Setup to Write Start 0 ns tPWE Write Pulse Width 40 ns tSD Data Setup to Write End 30 ns tHD Data Hold From Write End 0 ns Document #: 001-00217 Rev. *F Page 15 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Characteristics for VCC = 3.0V (continued) Over the Operating Range CYDM256B16, CYDM128B16, CYDM064B16 Parameter Description -55 Min tHZWE[26, 27] tLZWE[26, 27] tWDD[28] tDDD[28] Busy R/W LOW to High Z R/W HIGH to Low Z Unit Max 25 0 ns ns Write Pulse to Data Delay 80 ns Write Data Valid to Read Data Valid 80 ns Timing[29] tBLA BUSY LOW from Address Match 45 ns tBHA BUSY HIGH from Address Mismatch 45 ns tBLC BUSY LOW from CE LOW 45 ns tBHC BUSY HIGH from CE HIGH 45 ns tPS[30] Port Setup for Priority tWB tWH tBDD[31] 5 ns R/W HIGH after BUSY (Slave) 0 ns R/W HIGH after BUSY HIGH (Slave) 35 ns BUSY HIGH to Data Valid 40 ns tINS INT Set Time 45 ns tINR INT Reset Time 45 ns Interrupt Timing[29] Semaphore Timing tSOP SEM Flag Update Pulse (OE or SEM) 15 ns tSWRD SEM Flag Write to Read Time 10 ns tSPS SEM Flag Contention Window 10 ns tSAA SEM Address Access Time Document #: 001-00217 Rev. *F 55 ns Page 16 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Waveforms Figure 2. Read Cycle No.1 (Either Port Address Access) [32, 33, 34] tRC ADDRESS tOHA DATA OUT tAA tOHA PREVIOUS DATA VALID DATA VALID Figure 3. Read Cycle No.2 (Either Port CE/OE Access) [32, 35, 36] tACE CE and LB or UB tHZCE tDOE OE tHZOE tLZOE DATA VALID DATA OUT tLZCE tPU tPD ICC CURRENT ISB Figure 4. Read Cycle No. 3 (Either Port) [32, 34, 37, 38] tRC ADDRESS tAA tOHA UB or LB tHZCE tLZCE tABE CE tHZCE tACE tLZCE DATA OUT Notes 32. R/W is HIGH for read cycles. 33. Device is continuously selected CE = VIL and UB or LB = VIL. This waveform cannot be used for semaphore reads. 34. OE = VIL. 35. Address valid before or coincident with CE transition LOW. 36. To access RAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH, SEM = VIL. 37. R/W must be HIGH during all address transitions. 38. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM and a LOW UB or LB. Document #: 001-00217 Rev. *F Page 17 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Waveforms (continued) Figure 5. Write Cycle No.1: R/W Controlled Timing [37, 38, 39, 40, 41, 42] tWC ADDRESS tHZOE [43] OE tAW CE [41, 42] tPWE[40] tSA tHA R/W tHZWE[43] DATA OUT tLZWE NOTE 44 NOTE 44 tSD tHD DATA IN Figure 6. Write Cycle No. 2: CE Controlled Timing [37, 38, 39, 44] tWC ADDRESS tAW CE [41, 42] tSA tSCE tHA R/W tSD tHD DATA IN Notes 39. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle. 40. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the IO drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tPWE. 41. To access RAM, CE = VIL, SEM = VIH. 42. To access upper byte, CE = VIL, UB = VIL, SEM = VIH. To access lower byte, CE = VIL, LB = VIL, SEM = VIH. 43. Transition is measured ±0 mV from steady state with a 5 pF load (including scope and jig). This parameter is sampled and not 100% tested. 44. During this period, the IO pins are in the output state, and input signals must not be applied. Document #: 001-00217 Rev. *F Page 18 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Waveforms (continued) Figure 7. Semaphore Read After Write Timing (Either Side) [45, 46] tSAA A0–A2 VALID ADRESS VALID ADRESS tAW tACE tHA SEM tOHA tSCE tSOP tSD IO0 DATAIN VALID tSA tPWE DATAOUT VALID tHD R/W tSWRD tDOE tSOP OE WRITE CYCLE READ CYCLE Figure 8. Timing Diagram of Semaphore Contention [47, 48] A0L–A2L MATCH R/WL SEML tSPS A0R–A2R MATCH R/WR SEMR Notes 45. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high impedance state. 46. CE = HIGH for the duration of the above timing (both write and read cycle). 47. IO0R = IO0L = LOW (request semaphore); CER = CEL = HIGH. 48. If tSPS is violated, the semaphore is definitely obtained by one side or the other, but the side that gets the semaphore cannot be predicted. Document #: 001-00217 Rev. *F Page 19 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Waveforms (continued) Figure 9. Timing Diagram of Read with BUSY (M/S = HIGH) [49] tWC ADDRESSR MATCH tPWE R/WR tSD DATA INR tHD VALID tPS ADDRESSL MATCH tBLA tBHA BUSYL tBDD tDDD DATAOUTL VALID tWDD Figure 10. Write Timing with Busy Input (M/S = LOW) tPWE R/W BUSY tWB tWH Note 49. CEL = CER = LOW. Document #: 001-00217 Rev. *F Page 20 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Waveforms (continued) Figure 11. Busy Timing Diagram No.1 (CE Arbitration) CEL Valid First[50] ADDRESSL,R ADDRESS MATCH CEL tPS CER tBLC tBHC BUSYR CER Valid First ADDRESSL,R ADDRESS MATCH CER tPS CEL tBLC tBHC BUSYL Figure 12. Busy Timing Diagram No.2 (Address Arbitration) [50] Left Address Valid First tRC or tWC ADDRESSL ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESSR tBLA tBHA BUSYR Right Address Valid First tRC or tWC ADDRESSR ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESSL tBLA tBHA BUSYL Note 50. If tPS is violated, the busy signal is asserted on one side or the other, but there is no guarantee to which side BUSY iS asserted. Document #: 001-00217 Rev. *F Page 21 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Switching Waveforms (continued) Figure 13. Interrupt Timing Diagrams Left Side Sets INTR ADDRESSL tWC WRITE 1FFF (OR 1/3FFF) tHA[51] CEL R/WL INTR tINS [52] Right Side Clears INTR tRC READ 1FFF (OR 1/3FFF) ADDRESSR CER tINR [52] R/WR OER INTR Right Side Sets INTL tWC ADDRESSR WRITE 1FFE (OR 1/3FFE) tHA[51] CER R/WR INTL [52] tINS Left Side Clears INTL tRC READ 1FFE OR 1/3FFE) ADDRESSL CEL tINR[52] R/WL OEL INTL Notes 51. tHA depends on which enable pin (CEL or R/WL) is deasserted first. 52. tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last. Document #: 001-00217 Rev. *F Page 22 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Ordering Information Table 7. 16K x16 1.8V Asynchronous Dual-Port SRAM Speed (ns) Ordering Code Package Name 55 CYDM256B16-55BVXC BZ100 100-ball Pb-free 0.5 mm Pitch BGA Package Type Commercial Operating Range 55 CYDM256B16-55BVXI BZ100 100-ball Pb-free 0.5 mm Pitch BGA Industrial Table 8. 8K x16 1.8V Asynchronous Dual-Port SRAM Speed (ns) Ordering Code Package Name 55 CYDM128B16-55BVXC BZ100 100-ball Pb-free 0.5 mm Pitch BGA Package Type Commercial Operating Range 55 CYDM128B16-55BVXI BZ100 100-ball Pb-free 0.5 mm Pitch BGA Industrial Table 9. 4K x16 1.8V Asynchronous Dual-Port SRAM Speed (ns) Ordering Code Package Name Package Type Operating Range 55 CYDM064B16-55BVXC BZ100 100-ball Pb-free 0.5 mm Pitch BGA Commercial 55 CYDM064B16-55BVXI BZ100 100-ball Pb-free 0.5 mm Pitch BGA Industrial Package Diagram Figure 14. 100 VFBGA (6 x 6 x 1.0 mm) BZ100A "/44/-6)%7 4/06)%7 !#/2.%2 -# -#!" !#/2.%2 ¼8 ! " ! " # $ % & ' ( * + ¼ ¼ ! ! " # $ % & ' ( * + ¼ " ¼ # ¼ 2%& # 8 2%&%2%.#%*%$%#-/# 0+'7%)'(44"$.%70+' 3%!4).'0,!.% Document #: 001-00217 Rev. *F -!8 2%& # 51-85209 *B Page 23 of 24 [+] Feedback CYDM064B16, CYDM128B16, CYDM256B16 Document History Page Document Title: CYDM064B16, CYDM128B16, CYDM256B16 1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL® Dual-Port Static RAM Document Number: 001-00217 REV. ECN NO. Orig. of Change Submission Date Description of Change ** 369423 YDT New data sheet *A 381721 YDT Updated 2.5V/3.0V ICC, ISB1, ISB2, ISB4 Updated VOL ODR to 0.2V *B 396697 KGH Updated ISB2 and ISB4 typo to mA. Updated tINS and tINR for -55 to 31ns. *C 404777 KGH Updated IOH and IOL values for the 1.8V, 2.5V and 3.0V parameters VOH and VOL Replaced -35 speed bin with -40 Updated Switching Characteristics for VCC = 2.5V and VCC = 3.0V Included note 35 *D 426637 KGH Removed part numbers CYDM128B08 and CYDM064B08 *E 733676 HKH Corrected typo for power supply description in page 4 (3.0V instead of 3.3V) Updated tDDD timing value to be consistent with tWDD *F 2545957 OGC/AESA 07/31/2008 Removed all details of -40ns parts. Updated data sheet template. Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products PSoC Clocks & Buffers PSoC Solutions psoc.cypress.com clocks.cypress.com General Low Power/Low Voltage psoc.cypress.com/solutions psoc.cypress.com/low-power Wireless wireless.cypress.com Precision Analog Memories memory.cypress.com LCD Drive psoc.cypress.com/lcd-drive image.cypress.com CAN 2.0b psoc.cypress.com/can USB psoc.cypress.com/usb Image Sensors psoc.cypress.com/precision-analog © Cypress Semiconductor Corporation, 2005-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. 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Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-00217 Rev. *F Revised July 31, 2008 Page 24 of 24 MoBL is a registered trademark of Cypress Semiconductor Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. [+] Feedback