CYPRESS CY7C144AV

CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV 3.3V 8K/16K x 8
Dual-Port Static RAM
CY7C144AV
CY7C006AV
3.3V 8K/16K x 8
Dual-Port Static RAM
Features
■
True dual-ported memory cells which allow
simultaneous access of the same memory location
■
Expandable data bus to 16 bits or more using Master/ Slave
chip select when using more than one device
■
8K/16K x 8 organizations
(CY7C144AV/006AV)
■
On-chip arbitration logic
0.35-micron complementary metal oxide semiconductor
(CMOS) for optimum speed/power
■
■
Semaphores included to permit software handshaking
between ports
High-speed access: 25 ns
■
INT flag for port-to-port communication
■
Low operating power
■
Pin select for Master or Slave
■
■
Commercial and industrial temperature ranges
■
Available in 64-pin thin quad flat pack (TQFP) (7C006AV &
7C144AV)
■
Pb-free packages available
— Active: ICC = 115 mA (typical)
— Standby: ISB3 = 10 A (typical)
■
Fully asynchronous operation
■
Automatic power-down
Logic Block Diagram
R/WL
R/WR
CEL
CER
OEL
OER
[1]
8
8
I/O0L–I/O7L
[2]
A0L–A12–13L
[2]
13–14
Address
Decode
Address
Decode
True Dual-Ported
RAM Array
13–14
13–14
[2]
A0R–A12–13R
13–14
A0L–A12–13L
CEL
OEL
R/WL
SEML
BUSYL
INTL
I/O
Control
I/O
Control
[1]
I/O0R–I/O7R
[2]
A0R–A12–13R
CER
OER
R/WR
SEMR
Interrupt
Semaphore
Arbitration
[3]
[3]
BUSYR
INTR
M/S
Notes
1. I/O0–I/O7 for x8 devices
2. A0–A12 for 8K devices; A0–A13 for 16K devices
3. BUSY is an output in master mode and an input in slave mode.
Cypress Semiconductor Corporation
Document #: 38-06051 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 4, 2011
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CY7C144AV
CY7C006AV
Contents
Pin Definitions .................................................................. 4
Architecture ...................................................................... 5
Functional Description ..................................................... 5
Read and Write Operations ......................................... 5
Interrupts ..................................................................... 5
Busy ............................................................................ 5
Master/Slave ............................................................... 5
Semaphore Operation ................................................. 5
Maximum Ratings ............................................................. 7
Operating Range ............................................................... 7
Electrical Characteristics ................................................. 7
Capacitance ...................................................................... 7
AC Test Loads and Waveforms ....................................... 8
Switching Characteristics ................................................ 8
Document #: 38-06051 Rev. *E
Data Retention Mode ...................................................... 10
Timing .............................................................................. 10
Switching Waveforms .................................................... 11
Ordering Information ...................................................... 18
Ordering Code Definition ........................................... 18
Package Diagrams .......................................................... 19
Acronyms ........................................................................ 19
Document Conventions ................................................. 19
Units of Measure ....................................................... 19
Document History Page ................................................. 20
Sales, Solutions, and Legal Information ...................... 21
Worldwide Sales and Design Support ....................... 21
Products .................................................................... 21
PSoC Solutions ......................................................... 21
Page 2 of 21
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CY7C144AV
CY7C006AV
Pin Configurations
A6L
A5L
49
54
A7L
A12L
56
55
A8L
VCC
57
51
50
CEL
NC
A9L
SEML
59
52
R/WL
60
53
OEL
A11L
A10L
I/O0L
62
61
58
I/O1L
63
I/O2L
1
48
A4L
I/O3L
I/O4L
2
47
3
4
46
45
A3L
A2L
5
44
A0L
I/O6L
I/O7L
6
43
7
42
INTL
BUSYL
GND
M/S
I/O5L
GND
Document #: 38-06051 Rev. *E
64
64-Pin TQFP
Top View
A1L
VCC
8
GND
I/O0R
I/O1R
9
10
11
38
INTR
I/O2R
12
37
VCC
13
36
A0R
A1R
I/O3R
I/O4R
14
15
35
34
A2R
I/O5R
16
33
A4R
41
30
31
A7R
32
29
BUSYR
A3R
A6R
A5R
28
25
26
A12R
A8R
24
GND
40
39
A9R
23
27
22
CER
NC
A11R
A10R
21
19
20
OER
SEMR
18
R/WR
17
I/O6R
I/O7R
CY7C144AV (8K x 8)
Page 3 of 21
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CY7C144AV
CY7C006AV
Pin Configurations (continued)
A6L
A5L
49
54
A7L
A12L
56
55
A8L
VCC
57
51
50
CEL
A13L
A9L
SEML
59
52
R/WL
60
53
OEL
62
61
A11L
A10L
I/O0L
63
58
I/O1L
64
64-Pin TQFP Top View
I/O2L
1
48
A4L
I/O3L
I/O4L
2
47
3
4
46
45
A3L
A2L
5
44
A0L
I/O6L
I/O7L
6
43
7
42
INTL
BUSYL
GND
M/S
I/O5L
GND
A1L
VCC
8
GND
I/O0R
I/O1R
9
10
11
38
INTR
I/O2R
12
37
VCC
13
36
A0R
A1R
I/O3R
I/O4R
14
15
35
34
A2R
I/O5R
16
33
A4R
41
30
31
A7R
32
29
BUSYR
A3R
A6R
A5R
28
25
26
A12R
A8R
24
GND
40
39
A9R
23
27
22
CER
A13R
A11R
A10R
21
19
20
OER
SEMR
18
R/WR
17
I/O6R
I/O7R
CY7C006AV (16K x 8)
Selection Guide
CY7C144AV
CY7C006AV
-25
Maximum access time (ns)
25
Typical operating current (mA)
115
Typical standby current for ISB1 (mA) (Both ports TTL level)
30
10 A
Typical standby current for ISB3 (A) (Both ports CMOS level)
Pin Definitions
Left Port
Right Port
Description
CEL
CER
Chip enable
R/WL
R/WR
Read/Write enable
OEL
OER
Output enable
A0L–A12/13L
A0R–A12/13R
Address (A0–A12 for 8K devices; A0–A13 for 16K devices)
I/O0L–I/O7L
I/O0R–I/O7R
Data bus input/output (I/O0–I/O7 for x8 devices)
SEML
SEMR
Semaphore Enable
INTL
INTR
Interrupt flag
BUSYL
BUSYR
Busy flag
M/S
Master or Slave select
VCC
Power
GND
Ground
NC
No connect
Document #: 38-06051 Rev. *E
Page 4 of 21
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CY7C144AV
CY7C006AV
Architecture
The CY7C144AV and CY7C006AV and consist of an array of 8K
and 16K words of 8 bits each of dual-port RAM cells, I/O and
address lines, and control signals (CE, OE, R/W). These control
pins permit independent access for reads or writes to any
location in memory. To handle simultaneous writes/reads to the
same location, a BUSY pin is provided on each port. Two
interrupt (INT) pins can be utilized for port-to-port communication. Two semaphore (SEM) control pins are used for
allocating shared resources. With the M/S pin, the device can
function as a master (BUSY pins are outputs) or as a slave
(BUSY pins are inputs). The device also has an automatic
power-down feature controlled by CE. Each port is provided with
its own output enable control (OE), which allows data to be read
from the device.
Functional Description
The CY7C144AV and CY7C006AV are low-power CMOS
8K/16K x 8 dual-port static RAMs. Various arbitration schemes
are included on the devices to handle situations when multiple
processors access the same piece of data. Two ports are
provided, permitting independent, asynchronous access for
reads and writes to any location in memory. The devices can be
utilized as standalone 8-bit dual-port static RAMs or multiple
devices can be combined in order to function as a 16-bit or wider
master/slave dual-port static RAM. An M/S pin is provided for
implementing 16-bit or wider memory applications without the
need for separate master and slave devices or additional
discrete
logic.
Application
areas
include
interprocessor/multiprocessor designs, communications status
buffering, and dual-port video/graphics memory.
Each port has independent control pins: Chip Enable (CE), Read
or Write Enable (R/W), and Output Enable (OE). Two flags are
provided on each port (BUSY and INT). BUSY signals that the
port is trying to access the same location currently being
accessed by the other port. The Interrupt flag (INT) permits
communication between ports or systems by means of a mail
box. The semaphores are used to pass a flag, or token, from one
port to the other to indicate that a shared resource is in use. The
semaphore logic is comprised of eight shared latches. Only one
side can control the latch (semaphore) at any time. Control of a
semaphore indicates that a shared resource is in use. An
automatic power-down feature is controlled independently on
each port by a Chip Select (CE) pin.
Read and Write Operations
When writing data must be set up for a duration of tSD before the
rising edge of R/W in order to guarantee a valid write. A write
operation is controlled by either the R/W pin (see Write Cycle No.
1 waveform) or the CE pin (see Write Cycle No. 2 waveform).
Required inputs for non-contention operations are summarized
in Table 1.
If a location is being written to by one port and the opposite port
attempts to read that location, a port-to-port flowthrough delay
must occur before the data is read on the output; otherwise the
data read is not deterministic. Data will be valid on the port tDDD
after the data is presented on the other port.
When reading the device, the user must assert both the OE and
CE pins. Data will be available tACE after CE or tDOE after OE is
Document #: 38-06051 Rev. *E
asserted. If the user wishes to access a semaphore flag, then the
SEM pin must be asserted instead of the CE pin and OE must
also be asserted.
Interrupts
The upper two memory locations may be used for message
passing. The highest memory location (1FFF for the
CY7C144AV and 3FFF for the CY7C006AV) is the mailbox for
the right port and the second-highest memory location (1FFE for
the CY7C144AV and 3FFE for the CY7C006AV) is the mailbox
for the left port. When one port writes to the other port’s mailbox,
an interrupt is generated to the owner. The interrupt is reset when
the owner reads the contents of the mailbox. The message is
user defined.
Each port can read the other port’s mailbox without resetting the
interrupt. The active state of the busy signal (to a port) prevents
the port from setting the interrupt to the winning port. Also, an
active busy to a port prevents that port from reading its own
mailbox and, thus, resetting the interrupt to it. If an application
does not require message passing, do not connect the interrupt
pin to the processor’s interrupt request input pin. The operation
of the interrupts and their interaction with Busy are summarized
in Table 2.
Busy
The CY7C144AV and CY7C006AV provide on-chip arbitration to
resolve simultaneous memory location access (contention). If
both ports’ CEs are asserted and an address match occurs within
tPS of each other, the busy logic will determine which port has
access. If tPS is violated, one port will definitely gain permission
to the location, but it is not predictable which port will get that
permission. BUSY will be asserted tBLA after an address match
or tBLC after CE is taken LOW.
Master/Slave
An M/S pin is provided in order to expand the word width by
configuring the device as either a master or a slave. The BUSY
output of the master is connected to the BUSY input of the slave.
This will allow the device to interface to a master device with no
external components. Writing to slave devices must be delayed
until after the BUSY input has settled (tBLC or tBLA), otherwise,
the slave chip may begin a write cycle during a contention
situation. When tied HIGH, the M/S pin allows the device to be
used as a master and, therefore, the BUSY line is an output.
BUSY can then be used to send the arbitration outcome to a
slave.
Semaphore Operation
The CY7C144AV and CY7C006AV provide eight semaphore
latches, which are separate from the dual-port memory locations.
Semaphores are used to reserve resources that are shared
between the two ports. The state of the semaphore indicates that
a resource is in use. For example, if the left port wants to request
a given resource, it sets a latch by writing a zero to a semaphore
location. The left port then verifies its success in setting the latch
by reading it. After writing to the semaphore, SEM or OE must
be deasserted for tSOP before attempting to read the semaphore.
The semaphore value will be available tSWRD + tDOE after the
rising edge of the semaphore write. If the left port was successful
(reads a zero), it assumes control of the shared resource,
otherwise (reads a one) it assumes the right port has control and
Page 5 of 21
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CY7C144AV
CY7C006AV
continues to poll the semaphore. When the right side has
relinquished control of the semaphore (by writing a one), the left
side will succeed in gaining control of the semaphore. If the left
side no longer requires the semaphore, a one is written to cancel
its request.
Semaphores are accessed by asserting SEM LOW. The SEM
pin functions as a chip select for the semaphore latches (CE
must remain HIGH during SEM LOW). A0–2 represents the
semaphore address. OE and R/W are used in the same manner
as a normal memory access. When writing or reading a
semaphore, the other address pins have no effect.
When writing to the semaphore, only I/O0 is used. If a zero is
written to the left port of an available semaphore, a one will
appear at the same semaphore address on the right port. That
semaphore can now only be modified by the side showing zero
Document #: 38-06051 Rev. *E
(the left port in this case). If the left port now relinquishes control
by writing a one to the semaphore, the semaphore will be set to
one for both sides. However, if the right port had requested the
semaphore (written a zero) while the left port had control, the
right port would immediately own the semaphore as soon as the
left port released it. Table 3 shows sample semaphore
operations.
When reading a semaphore, all data lines output the semaphore
value. The read value is latched in an output register to prevent
the semaphore from changing state during a write from the other
port. If both ports attempt to access the semaphore within tSPS
of each other, the semaphore will definitely be obtained by one
side or the other, but there is no guarantee which side will control
the semaphore.
Page 6 of 21
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CY7C144AV
CY7C006AV
Maximum Ratings[4]
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage........................................... >2001 V
(Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.)
Latch-up current ..................................................... >200 mA
Storage temperature ................................ –65 C to +150 C
Operating Range
Ambient temperature with
Power applied........................................... –55 C to +125 C
Supply voltage to ground potential ...............–0.5 V to +4.6 V
DC voltage applied to
Outputs in High Z state .......................... –0.5 V to VCC+0.5 V
[5]
Range
Ambient
Temperature
VCC
Commercial
0 C to +70 C
3.3 V  300 mV
Industrial[12]
–40 C to +85 C
3.3 V  300 mV
.
DC input voltage ................................. –0.5 V to VCC+0.5 V
Electrical Characteristics Over the Operating Range
CY7C144AV
CY7C006AV
Parameter
Description
-25
VOH
Output HIGH voltage (VCC = 3.3 V)
VOL
Output LOW voltage
VIH
Input HIGH voltage
VIL
Input LOW voltage
IOZ
Output leakage current
ICC
Operating current (VCC = Max.,
IOUT = 0 mA) Outputs Disabled
Com’l
ISB1
Standby current (Both p TTL level) CEL &
CER  VIH, f = fMAX[6]
Com’l
ISB2
Standby current (One port TTL level)
CEL | CER  VIH, f = fMAX[6]
Com’l
ISB3
Standby current (Both ports CMOS level)
CEL & CER  VCC – 0.2 V, f = 0[6]
Com’l
Standby current (One port CMOS level)
CEL | CER  VIH, f = fMAX[6]
Com’l
ISB4
Min
Typ
2.4
–
Max
V
0.4
2.0
115
–
V
V
10
A
165
mA
40
mA
–
mA
30
Ind
–
mA
65
Ind
95
–
10
Ind
mA
mA
500
A
A
–
60
Ind
V
0.8
–10
Ind
Unit
80
–
mA
mA
Capacitance
[7]
Parameter
Description
CIN
Input capacitance
COUT
Output capacitance
Test Conditions
TA = 25 C, f = 1 MHz,
VCC = 3.3 V
Max
Unit
10
pF
10
pF
Notes
4. The Voltage on any input or I/O pin can not exceed the power pin during power-up.
5. Pulse width < 20 ns.
6. fMAX = 1/tRC. All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby
ISB3.
7. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-06051 Rev. *E
Page 7 of 21
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CY7C144AV
CY7C006AV
AC Test Loads and Waveforms
3.3 V
3.3 V
OUTPUT
R1 = 590 
OUTPUT
C = 30 pF
RTH = 250
R1 = 590 
C = 30 pF
R2 = 435 
OUTPUT
C = 5 pF
VTH = 1.4 V
(a) Normal Load (Load 1)
(b) Thévenin Equivalent (Load 1)
ALL INPUT PULSES
3.0V
10%
GND
90%
 3 ns
R2 = 435 
(c) Three-State Delay (Load 2)
(Used for tLZ, tHZ, tHZWE & tLZWE
including scope and jig)
90%
10%
 3 ns
.
Switching Characteristics Over the Operating Range[8]
Parameter
CY7C144AV
CY7C006AV
Description
Unit
-25
Min
Max
READ CYCLE
tRC
Read cycle time
25
–
ns
tAA
Address to data valid
–
25
ns
tOHA
Output hold from address change
3
–
ns
tACE[9]
CE LOW to data valid
–
25
ns
tDOE
OE LOW to data valid
–
13
ns
OE Low to Low Z
3
–
ns
OE HIGH to High Z
–
15
ns
CE LOW to Low Z
3
–
ns
CE HIGH to High Z
–
15
ns
CE LOW to power-up
0
–
ns
CE HIGH to power-down
–
25
ns
tWC
Write cycle time
25
–
ns
tSCE[9]
CE LOW to write end
20
–
ns
tAW
Address valid to write end
20
–
ns
tHA
Address hold from write end
0
–
ns
tSA[9]
Address set-up to write start
0
–
ns
tPWE
Write pulse width
20
–
ns
tSD
Data set-up to write end
15
–
ns
tLZOE
[10, 11, 12]
tHZOE[10, 11, 12]
tLZCE[10, 11, 12]
tHZCE[10, 11, 12]
tPU[12]
tPD[12]
WRITE CYCLE
Notes
8. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOI/IOH
and 30-pF load capacitance.
9. To access RAM, CE=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire tSCE time.
10. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.
11. Test conditions used are Load 3.
12. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy
waveform.
Document #: 38-06051 Rev. *E
Page 8 of 21
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CY7C144AV
CY7C006AV
Switching Characteristics Over the Operating Range[8] (continued)
Parameter
CY7C144AV
CY7C006AV
Description
Unit
-25
Min
Max
tHD
Data hold from write end
0
tHZWE[13, 14]
tLZWE[13, 14]
tWDD[15]
tDDD[15]
ns
R/W LOW to High Z
–
15
ns
R/W HIGH to Low Z
3
–
ns
Write pulse to data delay
–
50
ns
Write data valid to read data valid
–
35
ns
tBLA
BUSY LOW from address match
–
20
ns
tBHA
BUSY HIGH from address mismatch
–
20
ns
tBLC
BUSY LOW from CE LOW
–
20
ns
[16]
BUSY TIMING
tBHC
BUSY HIGH from CE HIGH
–
17
ns
tPS
Port set-up for priority
5
–
ns
tWB
R/W HIGH after BUSY (Slave)
0
–
ns
tWH
R/W HIGH after BUSY HIGH (Slave)
17
–
ns
tBDD[17]
BUSY HIGH to data valid
–
25
ns
INTERRUPT TIMING[16]
tINS
INT set time
–
20
ns
tINR
INT reset time
–
20
ns
SEMAPHORE TIMING
tSOP
SEM flag update pulse (OE or SEM)
12
–
ns
tSWRD
SEM flag write to read time
5
–
ns
tSPS
SEM flag contention window
5
–
ns
tSAA
SEM address access time
–
25
ns
Notes
13. Test conditions used are Load 3.
14. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy
waveform.
15. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.
16. Test conditions used are Load 2.
17. tBDD is a calculated parameter and is the greater of tWDD–tPWE (actual) or tDDD–tSD (actual).
Document #: 38-06051 Rev. *E
Page 9 of 21
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CY7C144AV
CY7C006AV
Data Retention Mode
The CY7C144AV and CY7C006AV are designed with battery
backup in mind. Data retention voltage and supply current are
guaranteed over temperature. The following rules ensure data
retention:
1. Chip enable (CE) must be held HIGH during data retention,
within VCC to VCC – 0.2 V.
2. CE must be kept between VCC – 0.2 V and 70% of VCC during
the power-up and power-down transitions.
3. The RAM can begin operation >tRC after VCC reaches the
minimum operating voltage (3.0 volts).
Timing
Data Retention Mode
VCC
3.0 V
VCC 2.0 V
3.0 V
VCC to VCC – 0.2 V
CE
Parameter
ICCDR1
Test Conditions[18]
@ VCCDR = 2 V
tRC
V
IH
Max
Unit
50
A
Notes
18. CE = VCC, Vin = GND to VCC, TA = 25 °C. This parameter is guaranteed but not tested.
Document #: 38-06051 Rev. *E
Page 10 of 21
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CY7C144AV
CY7C006AV
Switching Waveforms
Figure 1. Read Cycle No. 1 Either Port Address Access[19, 20, 21]
tRC
ADDRESS
tOHA
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
DATA VALID
Figure 2. Read Cycle No. 2 Either Port CE/OE Access[19, 22, 23]
tACE
CE
tDOE
OE
tHZCE
tHZOE
tLZOE
DATA VALID
DATA OUT
tLZCE
tPU
tPD
ICC
CURRENT
ISB
Figure 3. Read Cycle No. 3 Either Port[19, 21, 22, 23]
tRC
ADDRESS
tAA
tOHA
tLZCE
tABE
CE
tHZCE
tACE
tLZCE
DATA OUT
Notes
19. R/W is HIGH for read cycles.
20. Device is continuously selected CE = VIL. This waveform cannot be used for semaphore reads.
21. OE = VIL.
22. Address valid prior to or coincident with CE transition LOW.
23. To access RAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH, SEM = VIL.
Document #: 38-06051 Rev. *E
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Switching Waveforms (continued)
Figure 4. Write Cycle No. 1: R/W Controlled Timing[24, 25, 26, 27]
tWC
ADDRESS
tHZOE [28]
OE
tAW
CE
[29]
tPWE[27]
tSA
tHA
R/W
tHZWE[28]
tLZWE
Note 30
Note 30
DATA OUT
tSD
tHD
DATA IN
Figure 5. Write Cycle No. 2: CE Controlled Timing[24, 25, 26, 31]
tWC
ADDRESS
tAW
CE
[29]
tSA
tSCE
tHA
R/W
tSD
tHD
DATA IN
Notes
24. R/W must be HIGH during all address transitions.
25. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM.
26. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
27. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data
to be placed on the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be
as short as the specified tPWE.
28. Transition is measured 500 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
29. To access RAM, CE = VIL, SEM = VIH.
30. During this period, the I/O pins are in the output state, and input signals must not be applied.
31. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
Document #: 38-06051 Rev. *E
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Switching Waveforms (continued)
Figure 6. Semaphore Read After Write Timing, Either Side[32]
tSAA
A 0–A 2
VALID ADRESS
VALID ADRESS
tAW
tACE
tHA
SEM
tOHA
tSCE
tSOP
tSD
I/O 0
DATAIN VALID
tSA
tPWE
DATAOUT VALID
tHD
R/W
tSWRD
tDOE
tSOP
OE
WRITE CYCLE
READ CYCLE
Figure 7. Timing Diagram of Semaphore Contention[33, 34, 35]
A0L –A2L
MATCH
R/WL
SEM L
tSPS
A 0R –A 2R
MATCH
R/WR
SEM R
Notes
32. CE = HIGH for the duration of the above timing (both write and read cycle).
33. I/O0R = I/O0L = LOW (request semaphore); CER = CEL = HIGH.
34. Semaphores are reset (available to both ports) at cycle start.
35. If tSPS is violated, the semaphore will definitely be obtained by one side or the other, but which side will get the semaphore is unpredictable.
Document #: 38-06051 Rev. *E
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Switching Waveforms (continued)
Figure 8. Timing Diagram of Read with BUSY (M/S=HIGH)[36]
tWC
ADDRESSR
MATCH
tPWE
R/WR
tSD
DATA INR
tHD
VALID
tPS
ADDRESSL
MATCH
tBLA
tBHA
BUSYL
tBDD
tDDD
DATA OUTL
VALID
tWDD
Figure 9. Write Timing with Busy Input (M/S=LOW)
tPWE
R/W
BUSY
tWB
tWH
Note
36. CEL = CER = LOW.
Document #: 38-06051 Rev. *E
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Switching Waveforms (continued)
Figure 10. Busy Timing Diagrfam No.1 (CE Arbitration)[37]
CELValid First:
ADDRESS L,R
ADDRESS MATCH
CEL
tPS
CER
tBLC
tBHC
BUSYR
CER Valid First:
ADDRESS L,R
ADDRESS MATCH
CER
tPS
CE L
tBLC
tBHC
BUSY L
Figure 11. Busy Timing Diagram No.2 (Address Arbitration)[37]
Left Address Valid First
tRC or tWC
ADDRESS L
ADDRESS MATCH
ADDRESS MISMATCH
tPS
ADDRESSR
tBLA
tBHA
BUSY R
Right Address Valid First:
tRC or tWC
ADDRESSR
ADDRESS MATCH
ADDRESS MISMATCH
tPS
ADDRESSL
tBLA
tBHA
BUSY L
Note
37. If tPS is violated, the busy signal will be asserted on one side or the other, but there is no guarantee to which side BUSY will be asserted.
Document #: 38-06051 Rev. *E
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Switching Waveforms (continued)
Figure 12. Interrupt Timing Diagrams
Left Side Sets INTR :
ADDRESSL
tWC
WRITE 1FFF/3FFF (See Functional Description)
tHA[38]
CE L
R/W L
INT R
tINS [39]
Right Side Clears INT R :
tRC
READ 1FFF/3FFF
(See Functional Description)
ADDRESSR
CE R
tINR [39]
R/WR
OE R
INTR
Right Side Sets INT L:
tWC
ADDRESSR
WRITE 1FFE/3FFE (See Functional Description)
tHA[38]
CE R
R/W R
INT L
tINS[39]
Left Side Clears INT L:
tRC
READ 1FFE/3FFE
ADDRESSR
(See Functional Description)
CE L
tINR[39]
R/W L
OE L
INT L
Notes
38. tHA depends on which enable pin (CEL or R/WL) is deasserted first.
39. tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last.
Document #: 38-06051 Rev. *E
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Table 1. Non-Contending Read/Write
Inputs
CE
Outputs
R/W
OE
SEM
H
X
X
H
High Z
Deselected: Power-down
H
H
L
L
Data out
Read data in semaphore flag
X
X
H
X
High Z
I/O lines disabled
X
L
Data in
Write into semaphore flag
H
I/O0–I/O7
Operation
L
H
L
H
Data out
Read
L
L
X
H
Data in
Write
L
X
X
L
Not allowed
Table 2. Interrupt Operation Example (assumes BUSYL = BUSYR = HIGH)
Left Port
Function
R/WL
CEL
Right Port
OEL
A0L–13L
INTL
R/WR
CER
OER
A0R–13R
INTR
X
X
X
X
X
L[41]
H[42]
Set Right INTR flag
L
L
X
1FFF/3FFF[40]
Reset Right INTR flag
X
X
X
X
X
X
L
L
1FFF/3FFF[40]
Set Left INTL flag
X
X
X
X
L[42]
L
L
X
1FFE/3FFE[40]
X
L
1FFE/3FFE[40]
H[41]
X
X
X
X
X
Reset Left INTL flag
X
L
Table 3. Semaphore Operation Example
Function
I/O0–I/O7 Left
I/O0–I/O7 Right
Status
No action
1
1
Semaphore free
Left port writes 0 to semaphore
0
1
Left Port has semaphore token
Right port writes 0 to semaphore
0
1
No change. Right side has no write access to semaphore
Left port writes 1 to semaphore
1
0
Right port obtains semaphore token
Left port writes 0 to semaphore
1
0
No change. Left port has no write access to semaphore
Right port writes 1 to semaphore
0
1
Left port obtains semaphore token
Left port writes 1 to semaphore
1
1
Semaphore free
Right port writes 0 to semaphore
1
0
Right port has semaphore token
Right port writes 1 to semaphore
1
1
Semaphore free
Left port writes 0 to semaphore
0
1
Left port has semaphore token
Left port writes 1 to semaphore
1
1
Semaphore free
Notes
40. See Functional Description for specific addresses by device part number.
41. If BUSYL = L, then no change.
42. If BUSYR = L, then no change.
Document #: 38-06051 Rev. *E
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Ordering Information
8K x8 3.3V Asynchronous Dual-Port SRAM
Speed
(ns)
25
Ordering Code
Package
Name
Package Type
CY7C144AV–25AC
A65
64-Pin Thin Quad Flat Pack
CY7C144AV-25AXC
A65
64-Pin Pb-free Thin Quad Flat Pack
Operating
Range
Commercial
16K x8 3.3V Asynchronous Dual-Port SRAM
Speed
(ns)
25
Ordering Code
CY7C006AV-25AXC
Package
Name
A65
Package Type
64-Pin Pb-free Thin Quad Flat Pack
Operating
Range
Commercial
Ordering Code Definition
CY 7C XXX XX XX
A
X X
Operating Range: C = Commercial
X:Pb-free (RoHS compliant)
Package: TQFP
Speed grade: 25ns
V/AV : 3.3 V
Part Identifier
Dual port SRAM
Company Id: CY=Cypress
Document #: 38-06051 Rev. *E
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Package Diagrams
64-Lead Thin Plastic Quad Flat Pack (14 x 14 x 1.4 mm) A65
64-Lead Pb-Free Thin Plastic Quad Flat Pack (14 x 14 x 1.4mm) A65
51-85046 *E
Acronyms
Acronym
Description
CMOS
complementary metal oxide semiconductor
I/O
input/output
SRAM
static random access memory
TQFP
Thin Quad Flat Pack
Document Conventions
Units of Measure
Symbol
Unit of Measure
°C
degrees Celsius
A
microamperes
mA
milliampere
MHz
megahertz
ns
nanoseconds
pF
picofarads
V
volts

ohms
W
watts
All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-06051 Rev. *E
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Document History Page
Document Title: CY7C144AV/CY7C006AV 3.3V 8K/16K x 8 Dual-Port Static RAM
Document Number: 38-06051
ECN NO.
Issue Date
Orig. of
Change
**
110203
12/02/01
SZV
Change from Spec number: 38-00837 to 38-06051
*A
122301
12/27/02
RBI
Power up requirements added to Maximum Ratings Information
REV.
Description of Change
*B
237623
See ECN
YDT
Removed cross information from features section
*C
373615
See ECN
PCX
Added Pb-Free Logo
Added Pb-Free parts to ordering information:
CY7C144AV-25AXC, CY7C144AV-25JXC, CY7C006AV-25AXC
*D
2896210
03/22/2010
RAME
Updated Ordering Information
Updated Package Diagrams
*E
3161515
02/04/2011
ADMU
Removed CY7C145AV-20JC
Removed information for parts:
CY7C138AV, CY7C139AV, CY7C145AV ,CY7C016AV,CY7C007AV,
CY7C017AV
Updated package diagram
Document #: 38-06051 Rev. *E
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Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
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PSoC 1 | PSoC 3 | PSoC 5
cypress.com/go/powerpsoc
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cypress.com/go/USB
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© Cypress Semiconductor Corporation, 2010-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 38-06051 Rev. *E
Revised February 4, 2011
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All products and company names mentioned in this document may be the trademarks of their respective holders.
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