CY7C026A16K x 16 Dual-Port Static RAM CY7C026A 16K x 16 Dual-Port Static RAM Features ■ True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 16 organization (CY7C026A) ■ 0.35 micron CMOS for optimum speed and power ■ High speed access: 15, and 20 ns ■ Low operating power ■ Active: ICC = 180 mA (typical) ■ Standby: ISB3 = 0.05 mA (typical) ■ Fully asynchronous operation ■ Automatic power-down ■ Expandable data bus to 32 bits or more using Master/Slave chip select when using more than one device ■ On-chip arbitration logic ■ Semaphores included to permit software handshaking between ports ■ INT flags for port-to-port communication ■ Separate upper-byte and lower-byte control ■ Pin select for Master or Slave ■ Commercial and Industrial temperature ranges ■ Available in 100-pin thin quad plastic flatpack (TQFP) ■ Pb-free packages available Logic Block Diagram R/WL UBL R/WR UBR CEL CER LBL LBR OEL OER [1] I/O8L–I/O15L I/O0L–I/O[2] 7L 8 8 8 8 14 A0L–A13L I/O Control Address Decode I/O Control 14 14 A0R–A13R 14 A0L–A13L CEL OEL R/WL SEML BUSYL INTL UBL LBL [2] I/O0L–I/O7R Address Decode True Dual-Ported RAM Array [1] I/O8L–I/O15R A0R–A13R CER OER R/WR SEMR Interrupt Semaphore Arbitration [3] [3] M/S BUSYR INTR UBR LBR Notes 1. I/O8–I/O15 for x16 devices. 2. I/O0–I/O7 for x16 devices. 3. BUSY is an output in master mode and an input in slave mode. Cypress Semiconductor Corporation Document #: 38-06046 Rev. *G • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised October 14, 2011 CY7C026A Contents Pin Configurations ........................................................... 3 Selection Guide ................................................................ 3 Pin Definitions .................................................................. 4 Architecture ...................................................................... 4 Functional Description ..................................................... 4 Write Operation ........................................................... 4 Read Operation ........................................................... 4 Interrupts ..................................................................... 4 Busy ............................................................................ 5 Master/Slave ............................................................... 5 Semaphore Operation ................................................. 5 Maximum Ratings.............................................................. 6 Operating Range ............................................................... 6 Electrical Characteristics Over the Operating Range ... 6 Capacitance[7] .................................................................. 6 Switching Characteristics \Over the Operating Range[8] 8 Data Retention Mode ........................................................ 9 Timing ................................................................................ 9 Switching Waveforms .................................................... 10 Ordering Information ...................................................... 17 16K x16 Asynchronous Dual-Port SRAM .................. 17 Ordering Code Definition ........................................... 17 Package Diagram ............................................................ 18 Acronyms ........................................................................ 19 Document Conventions ................................................. 19 Units of Measure ....................................................... 19 Document History Page ................................................. 20 Sales, Solutions, and Legal Information ...................... 21 Worldwide Sales and Design Support ....................... 21 Products .................................................................... 21 PSoC Solutions ......................................................... 21 Pin Configurations Figure 1. 100-Pin TQFP (Top View) Document #: 38-06046 Rev. *G Page 2 of 21 A7L A8L A9L A10L A11L A12L A13L LBL UBL CEL SEML R/WL VCC OEL I/O0L I/O1L GND I/O2L I/O3L I/O4L I/O5L I/O6L I/O7L I/O8L I/O9L CY7C026A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 NC 1 75 NC NC 2 74 NC NC 3 73 NC NC 4 72 A6L I/O10L 5 71 A5L I/O11L 6 70 A4L I/O12L 7 69 A3L I/O13L 8 68 A2L GND 9 67 A1L I/O14L 10 66 A0L I/O15L 11 65 INTL VCC 12 64 BUSYL GND 13 63 GND I/O0R 14 62 M/S I/O1R 15 61 BUSYR I/O2R 16 60 INTR VCC 17 59 A0R I/O3R 18 58 A1R I/O4R 19 57 A2R I/O5R 20 56 A3R I/O6R 21 55 A4R NC 22 54 A5R NC 23 53 NC NC 24 52 NC NC 25 51 NC CY7C026A (16K x 16) A6R A7R A8R A9R A10R A11R A12R A13R LBR UBR CER SEMR GND R/WR OER I/O15R GND I/O14R I/O13R I/O12R I/O11R I/O10R I/O9R I/O8R I/O7R 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Selection Guide CY7C026A -15 CY7C026A -20 Unit Maximum access time 15 20 ns Typical operating current 190 180 mA Typical standby current for ISB1 (Both ports TTL level) 50 45 mA 0.05 0.05 mA Parameter Typical standby current for ISB3 (Both ports CMOS level) Document #: 38-06046 Rev. *G Page 3 of 21 CY7C026A Pin Definitions Left Port Right Port Description CEL CER Chip enable R/WL R/WR Read/Write enable OEL OER Output enable A0L–A13L A0R–A13R Address I/O0L–I/O15L I/O0R–I/O15R Data bus input/output SEML SEMR Semaphore enable UBL UBR Upper byte select (I/O8–I/O15 for x16 devices) LBL LBR Lower byte select (I/O0–I/O7 for x16 devices) INTL INTR Interrupt flag BUSYL BUSYR Busy flag M/S Master or slave select VCC Power GND Ground NC No connect Architecture The CY7C026A consist of an array of 16K words of 16 bits each of dual-port RAM cells, I/O and address lines, and control signals (CE, OE, R/W). These control pins permit independent access for reads or writes to any location in memory. To handle simultaneous writes/reads to the same location, a BUSY pin is provided on each port. Two Interrupt (INT) pins can be utilized for port-to-port communication. Two Semaphore (SEM) control pins are used for allocating shared resources. With the M/S pin, the devices can function as a master (BUSY pins are outputs) or as a slave (BUSY pins are inputs). The devices also have an automatic power down feature controlled by CE. Each port is provided with its own Output Enable control (OE), which allows data to be read from the device. Functional Description The CY7C026A is a low power CMOS 16K x 16 dual-port static RAM. Various arbitration schemes are included on the devices to handle situations when multiple processors access the same piece of data. Two ports are provided, permitting independent, asynchronous access for reads and writes to any location in memory. The device can be utilized as standalone 16-bit dual-port static RAM or multiple devices can be combined to function as a 32-bit or wider master/slave dual-port static RAM. An M/S pin is provided for implementing 32-bit or wider memory applications without the need for separate master and slave devices or additional discrete logic. Application areas include interprocessor/multiprocessor designs, communications status buffering, and dual-port video/graphics memory. Each port has independent control pins: Chip Enable (CE), Read or Write Enable (R/W), and Output Enable (OE). Two flags are provided on each port (BUSY and INT). BUSY signals that the port is trying to access the same location currently being accessed by the other port. The Interrupt flag (INT) permits communication between ports or systems by means of a mail box. The semaphores are used to pass a flag, or token, from one Document #: 38-06046 Rev. *G port to the other to indicate that a shared resource is in use. The semaphore logic is comprised of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared resource is in use. An automatic power down feature is controlled independently on each port by the chip enable pin. The CY7C026A is available in 100-pin thin quad plastic flatpack (TQFP) packages. Write Operation Data must be set up for a duration of tSD before the rising edge of R/W to either the R/W pin (see Figure 6) or the CE pin (see Figure 7). Required inputs for non-contention operations are summarized in Table 1. If a location is being written to by one port and the opposite port attempts to read that location, a port-to-port flowthrough delay must occur before the data is read on the output; otherwise the data read is not deterministic. Data is valid on the port tDDD after the data is presented on the other port. Read Operation When reading the device, the user must assert both the OE and CE pins. Data is available tACE after CE or tDOE after OE is asserted. If the user wishes to access a semaphore flag, then the SEM pin must be asserted instead of the CE pin, and OE must also be asserted. Interrupts The upper two memory locations may be used for message passing. The highest memory location (3FFF) is the mailbox for the right port and the second highest memory location (3FFE) is the mailbox for the left port. When one port writes to the other port’s mailbox, an interrupt is generated to the owner. The interrupt is reset when the owner reads the contents of the mailbox. The message is user defined. Each port can read the other port’s mailbox without resetting the interrupt. The active state of the busy signal (to a port) prevents Page 4 of 21 CY7C026A the port from setting the interrupt to the winning port. Also, an active busy to a port prevents that port from reading its own mailbox and, thus, resetting the interrupt to it. If an application does not require message passing, do not connect the interrupt pin to the processor’s interrupt request input pin. The operation of the interrupts and their interaction with Busy are summarized in Table 2. Busy The CY7C026A provides on-chip arbitration to resolve simultaneous memory location access (contention). If both ports’ CEs are asserted and an address match occurs within tPS of each other, the busy logic determines which port has access. If tPS is violated, one port definitely gains permission to the location, but it is not predictable which port gets that permission. BUSY is asserted tBLA after an address match or tBLC after CE is taken LOW. Master/Slave A M/S pin is provided to expand the word width by configuring the device as either a master or a slave. The BUSY output of the master is connected to the BUSY input of the slave. This allows the device to interface to a master device with no external components. Writing to slave devices must be delayed until after the BUSY input has settled (tBLC or tBLA), otherwise, the slave chip may begin a write cycle during a contention situation. When tied HIGH, the M/S pin allows the device to be used as a master and, therefore, the BUSY line is an output. BUSY can then be used to send the arbitration outcome to a slave. Semaphore Operation The CY7C026A provides eight semaphore latches, which are separate from the dual-port memory locations. Semaphores are used to reserve resources that are shared between the two ports. The state of the semaphore indicates that a resource is in use. For example, if the left port wants to request a given resource, it Document #: 38-06046 Rev. *G sets a latch by writing a zero to a semaphore location. The left port then verifies its success in setting the latch by reading it. After writing to the semaphore, SEM or OE must be deasserted for tSOP before attempting to read the semaphore. The semaphore value is available tSWRD + tDOE after the rising edge of the semaphore write. If the left port was successful (reads a zero), it assumes control of the shared resource, otherwise (reads a one) it assumes the right port has control and continues to poll the semaphore. When the right side has relinquished control of the semaphore (by writing a one), the left side succeeds in gaining control of the semaphore. If the left side no longer requires the semaphore, a one is written to cancel its request. Semaphores are accessed by asserting SEM LOW. The SEM pin functions as a chip select for the semaphore latches (CE must remain HIGH during SEM LOW). A0–2 represents the semaphore address. OE and R/W are used in the same manner as a normal memory access. When writing or reading a semaphore, the other address pins have no effect. When writing to the semaphore, only I/O0 is used. If a zero is written to the left port of an available semaphore, a one appears at the same semaphore address on the right port. That semaphore can now only be modified by the side showing zero (the left port in this case). If the left port now relinquishes control by writing a one to the semaphore, the semaphore is set to one for both sides. However, if the right port had requested the semaphore (written a zero) while the left port had control, the right port would immediately own the semaphore as soon as the left port released it. Table 3 shows sample semaphore operations. When reading a semaphore, all sixteen/eighteen data lines output the semaphore value. The read value is latched in an output register to prevent the semaphore from changing state during a write from the other port. If both ports attempt to access the semaphore within tSPS of each other, the semaphore is definitely obtained by one side or the other, but there is no guarantee which side controls the semaphore. Page 5 of 21 CY7C026A DC input voltage[5] .......................................–0.5 V to + 7.0 V Maximum Ratings[4] Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Output current into outputs (LOW) .............................. 20 mA Static discharge voltage........................................... >2001 V Storage temperature ................................ –65 C to +150 C Latch-up current ..................................................... >200 mA Ambient temperature with power applied ........................................... –55C to +125 C Operating Range Range Ambient Temperature VCC Commercial 0 C to +70 C 5V 10% –40 C to +85 C 5V 10% Supply voltage to ground potential ...............–0.3 V to +7.0 V DC voltage applied to outputs in High Z state ..............................................–0.5 V to +7.0 V Industrial Electrical Characteristics Over the Operating Range CY7C026A Parameter Description -15 Min Typ -20 Max Min Unit Typ Max VOH Output HIGH voltage (VCC = Min., IOH = –4.0 mA) 2.4 – 2.4 – V VOL Output LOW voltage (VCC = Min., IOH = +4.0 mA) – 0.4 – 0.4 V VIH Input HIGH voltage – 2.2 VIL Input LOW voltage 2.2 0.8 IOZ Output leakage current ICC Operating current (VCC = Max, IOUT = 0 Com’l. mA) outputs disabled Indust. ISB1 Standby current (Both ports TTL level) CEL & CER VIH, f = fMAX Com’l. Indust. Standby current (One port TTL level) CEL | CER VIH, f = fMAX Com’l. 120 180 Indust. 135 205 Standby current (Both port CMOS level) CEL & CER VCC –0.2V, f = 0 Com’l. 0.05 0.5 Indust. 0.05 0.5 Standby current (One port CMOS level) CEL | CER VIH, f = fMAX[6] Com’l. 110 160 Indust. 125 175 ISB2 ISB3 ISB4 –10 10 –10 190 285 – 215 305 50 70 65 95 180 – V 0.8 V 10 A 275 mA – 45 mA 65 mA – 110 mA 160 mA – 0.05 mA 0.5 mA – 100 mA 140 mA – mA Capacitance[7] Parameter Description CIN Input capacitance COUT Output capacitance Test Conditions TA = 25 C, f = 1 MHz, VCC = 5.0 V Max Unit 10 pF 10 pF Notes 4. The voltage on any input or I/O pin cannot exceed the power pin during power up. 5. Pulse width < 20 ns. 6. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3. 7. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-06046 Rev. *G Page 6 of 21 CY7C026A Figure 2. AC Test Loads and Waveforms 5V 5V R1 = 893 OUTPUT RTH = 250 OUTPUT R1 = 893 OUTPUT C = 30 pF C = 30 pF R2 = 347 C = 5 pF R2 = 347 VTH = 1.4 V (a) Normal Load (Load 1) (c) Three-State Delay (Load 2) (Used for tLZ, tHZ, tHZWE, & tLZWE including scope and jig) (b) Thévenin Equivalent (Load 1) ALL INPUT PULSES 3.0V 10% GND 90% 10% 90% 3 ns 3 ns 1 . 00 0. 90 (ns) for all -12 access times 0. 80 0. 70 0. 60 0. 50 0. 40 0. 30 0. 20 0. 1 0 0. 00 10 15 20 25 30 35 Capacitance (pF) Load Derating Curve Document #: 38-06046 Rev. *G Page 7 of 21 CY7C026A Switching Characteristics Over the Operating Range[8] CY7C026A Parameter Description -15 -20 Unit Min Max Min Max 15 – 20 – READ CYCLE tRC Read cycle time ns tAA Address to data valid – 15 – 20 ns tOHA Output hold from address change 3 – 3 – ns tACE[9] CE LOW to data valid – 15 – 20 ns tDOE OE LOW to data valid – 10 – 12 ns tLZOE[10, 11, 12] OE LOW to Low Z 3 – 3 – ns tHZOE[10, 11, 12] tLZCE[10, 11, 12] tHZCE[10, 11, 12] tPU[12] tPD[12] tABE[9] OE HIGH to High Z – 10 – 12 ns CE LOW to Low Z 3 – 3 – ns CE HIGH to High Z – 10 – 12 ns CE LOW to Power-up 0 – 0 – ns CE HIGH to Power-down – 15 – 20 ns Byte enable access time – 15 – 20 ns tWC Write cycle time 15 – 20 – ns tSCE[9] CE LOW to write end 12 – 15 – ns WRITE CYCLE tAW Address valid to write end 12 – 15 – ns tHA Address hold From write end 0 – 0 – ns tSA[9] Address setup to write start 0 – 0 – ns tPWE Write pulse width 12 – 15 – ns tSD Data setup to write end 10 – 15 – ns tHD[14] tHZWE[11, 12] tLZWE[11, 12] tWDD[13] tDDD[13] Data hold from write end 0 – 0 – ns R/W LOW to High Z – 10 – 12 ns R/W HIGH to Low Z 3 – 3 – ns Write pulse to data delay – 30 – 45 ns Write data valid to read data valid – 25 – 30 ns Notes 8. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOI/IOH and 30 pF load capacitance. 9. To access RAM, CE = L, UB = L, SEM = H. To access semaphore, CE = H and SEM = L. Either condition must be valid for the entire tSCE time. 10. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE. 11. Test conditions used are Load 2. 12. This parameter is guaranteed but not tested. 13. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Figure 10. 14. For 15 ns industrial parts tHD minimum is 0.5 ns. Document #: 38-06046 Rev. *G Page 8 of 21 CY7C026A Switching Characteristics Over the Operating Range[8] (continued) CY7C026A Parameter Description -15 Min -20 Max Min Unit Max BUSY TIMING[15] tBLA BUSY LOW from address match – 15 – 20 ns tBHA BUSY HIGH from address mismatch – 15 – 20 ns tBLC BUSY LOW from CE LOW – 15 20 ns tBHC BUSY HIGH from CE HIGH – 15 – 17 ns tPS Port setup for priority 5 – 5 – ns tWB R/W HIGH after BUSY (Slave) 0 – 0 – ns tWH R/W HIGH after BUSY HIGH (Slave) 13 – 15 – ns tBDD[16] BUSY HIGH to data valid – 15 – 20 ns INTERRUPT TIMING[15] tINS INT set time – 15 – 20 ns tINR INT reset time – 15 – 20 ns 10 – 10 – ns SEMAPHORE TIMING tSOP SEM flag update pulse (OE or SEM) tSWRD SEM flag write to read time 5 – 5 – ns tSPS SEM flag contention window 5 – 5 – ns tSAA SEM address access time – 15 – 20 ns Data Retention Mode The CY7C026A is designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules ensure data retention: 1. Chip Enable (CE) must be held HIGH during data retention, within VCC to VCC – 0.2 V. 2. CE must be kept between VCC – 0.2 V and 70% of VCC during the power up and power down transitions. 3. The RAM can begin operation >tRC after VCC reaches the minimum operating voltage (4.5 V). Timing Data Retention Mode VCC 4.5 V VCC 2.0 V 4.5 V VCC to VCC – 0.2 V CE Parameter ICCDR1 Test Conditions[17] At VCCDR = 2 V tRC V IH Max Unit 1.5 mA Notes 15. Test conditions used are Load 2. 16. tBDD is a calculated parameter and is the greater of tWDD–tPWE (actual) or tDDD–tSD (actual). 17. CE = VCC, Vin = GND to VCC, TA = 25 C. This parameter is guaranteed but not tested. Document #: 38-06046 Rev. *G Page 9 of 21 CY7C026A Switching Waveforms Figure 3. Read Cycle No.1 (Either Port Address Access)[18, 19, 20] tRC ADDRESS tOHA DATA OUT tAA tOHA PREVIOUS DATA VALID DATA VALID Figure 4. Read Cycle No.2 (Either Port CE/OE Access)[18, 21, 22] tACE CE and LB or UB tHZCE tDOE OE tHZOE tLZOE DATA VALID DATA OUT tLZCE tPU tPD ICC CURRENT ISB Figure 5. Read Cycle No. 3 (Either Port)[18, 20, 21, 22] tRC ADDRESS tAA tOHA UB or LB tHZCE tLZCE tABE CE tHZCE tACE tLZCE DATA OUT Notes 18. R/W is HIGH for read cycles. 19. Device is continuously selected CE = VIL and UB or LB = VIL. This waveform cannot be used for semaphore reads. 20. OE = VIL. 21. Address valid prior to or coincident with CE transition LOW. 22. To access RAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH, SEM = VIL. Document #: 38-06046 Rev. *G Page 10 of 21 CY7C026A Switching Waveforms (continued) Figure 6. Write Cycle No. 1: R/W Controlled Timing[23, 24, 25, 26] tWC ADDRESS tHZOE [29] OE tAW CE [27,28] tPWE[26] tSA tHA R/W tHZWE[29] DATA OUT tLZWE NOTE 30 NOTE 30 tSD tHD DATA IN Figure 7. Write Cycle No. 2: CE Controlled Timing[23, 24, 25, 31] tWC ADDRESS tAW CE [27,28] tSA tSCE tHA R/W tSD tHD DATA IN Notes 23. R/W must be HIGH during all address transitions. 24. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM and a LOW UB or LB. 25. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle. 26. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and data to be placed on the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tPWE. 27. To access RAM, CE = VIL, SEM = VIH. 28. To access upper byte, CE = VIL, UB = VIL, SEM = VIH. To access lower byte, CE = VIL, LB = VIL, SEM = VIH. 29. Transition is measured 500 mV from steady state with a 5 pF load (including scope and jig). This parameter is sampled and not 100% tested. 30. During this period, the I/O pins are in the output state, and input signals must not be applied. 31. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high impedance state. Document #: 38-06046 Rev. *G Page 11 of 21 CY7C026A Switching Waveforms (continued) Figure 8. Semaphore Read After Write Timing, Either Side[32] tSAA A0–A2 VALID ADRESS VALID ADRESS tAW tACE tHA SEM tOHA tSCE tSOP tSD I/O0 DATAIN VALID tSA tPWE DATAOUT VALID tHD R/W tSWRD tDOE tSOP OE WRITE CYCLE READ CYCLE Figure 9. Timing Diagram of Semaphore Contention[33, 34, 35] A0L–A2L MATCH R/WL SEML tSPS A0R–A2R MATCH R/WR SEMR Notes 32. CE = HIGH for the duration of the above timing (both write and read cycle). 33. I/O0R = I/O0L = LOW (request semaphore); CER = CEL = HIGH. 34. Semaphores are reset (available to both ports) at cycle start. 35. If tSPS is violated, the semaphore is definitely obtained by one side or the other, but which side gets the semaphore is unpredictable. Document #: 38-06046 Rev. *G Page 12 of 21 CY7C026A Switching Waveforms (continued) Figure 10. Timing Diagram of Read with BUSY (M/S = HIGH)[36] tWC ADDRESSR MATCH tPWE R/WR tSD DATA INR tHD VALID tPS ADDRESSL MATCH tBLA tBHA BUSYL tBDD tDDD DATAOUTL VALID tWDD Figure 11. Write Timing with Busy Input (M/S = LOW) tPWE R/W BUSY tWB tWH Note 36. CEL = CER = LOW. Document #: 38-06046 Rev. *G Page 13 of 21 CY7C026A Switching Waveforms (continued) Figure 12. Busy Timing Diagram No. 1 (CE Arbitration)[37] CEL Valid First: ADDRESSL,R ADDRESS MATCH CEL tPS CER tBLC tBHC BUSYR CER Valid First: ADDRESSL,R ADDRESS MATCH CER tPS CEL tBLC tBHC BUSYL Figure 13. Busy Timing Diagram No. 2 (Address Arbitration)[37] Left Address Valid First: tRC or tWC ADDRESSL ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESSR tBLA tBHA BUSYR Right Address Valid First: tRC or tWC ADDRESSR ADDRESS MATCH ADDRESS MISMATCH tPS ADDRESSL tBLA tBHA BUSYL Note 37. If tPS is violated, the busy signal is asserted on one side or the other, but there is no guarantee to which side BUSY is asserted. Document #: 38-06046 Rev. *G Page 14 of 21 CY7C026A Switching Waveforms (continued) Figure 14. Interrupt Timing Diagrams Left Side Sets INTR: tWC ADDRESSL WRITE 3FFF tHA[38] CEL R/WL INTR tINS [39] Right Side Clears INTR: tRC ADDRESSR READ 3FFF CER tINR [39] R/WR OER INTR Right Side Sets INTL: tWC ADDRESSR WRITE 3FFE tHA[38] CER R/WR INTL [39] tINS Left Side Clears INTL: tRC READ 3FFE ADDRESSR CEL tINR[39] R/WL OEL INTL Notes 38. tHA depends on which enable pin (CEL or R/WL) is deasserted first. 39. tINS or tINR depends on which enable pin (CEL or R/WL) is asserted last. Document #: 38-06046 Rev. *G Page 15 of 21 CY7C026A Table 1. Non-Contending Read/Write Inputs Outputs CE R/W OE UB LB SEM I/O8–I/O15 I/O0–I/O7 Operation H X X X X H High Z High Z Deselected: Power-down X X X H H H High Z High Z Deselected: Power-down L L X L H H Data in High Z Write to upper byte only L L X H L H High Z Data in Write to lower byte only L L X L L H Data in Data in Write to both bytes L H L L H H Data out High Z Read upper byte only L H L H L H High Z Data out Read lower byte only L H L L L H Data out Data out Read both bytes X X H X X X High Z High Z Outputs disabled H H L X X L Data out Data out Read data in semaphore flag X H L H H L Data out Data out Read data in semaphore flag H X X X L Data in Data in Write DIN0 into semaphore flag X X H H L Data in Data in Write DIN0 into semaphore flag L X X L X L Not allowed L X X X L L Not allowed Table 2. Interrupt Operation Example (assumes BUSYL = BUSYR = HIGH) Left Port Function Right Port R/WL CEL OEL A0L–13L INTL R/WR CER OER A0R–13R INTR Set right INTR flag L L X 3FFF X X X X X L[41] Reset right INTR flag X X X X X X L L 3FFF H[40] Set left INTL flag X X X X L[40] L L X 3FFE X Reset left INTL flag X L L 3FFE H[41] X X X X X Table 3. Semaphore Operation Example Function I/O0–I/O15 Left I/O0–I/O15 Right Status No action 1 1 Semaphore free Left port writes 0 to semaphore 0 1 Left port has semaphore token Right port writes 0 to semaphore 0 1 No change. Right side has no write access to semaphore Left port writes 1 to semaphore 1 0 Right port obtains semaphore token Left port writes 0 to semaphore 1 0 No change. Left port has no write access to semaphore Right port writes 1 to semaphore 0 1 Left port obtains semaphore token Left port writes 1 to semaphore 1 1 Semaphore free Right port writes 0 to semaphore 1 0 Right port has semaphore token Right port writes 1 to semaphore 1 1 Semaphore free Left port writes 0 to semaphore 0 1 Left port has semaphore token Left port writes 1 to semaphore 1 1 Semaphore free Notes 40. If BUSYL=L, then no change. 41. If BUSYR=L, then no change. Document #: 38-06046 Rev. *G Page 16 of 21 CY7C026A Ordering Information 16K x16 Asynchronous Dual-Port SRAM Speed (ns) Package Name Ordering Code Operating Range Package Type 15 CY7C026A-15AXI A100 100-Pin Pb-free Thin Quad Flat Pack Industrial 20 CY7C026A-20AXC A100 100-Pin Pb-free Thin Quad Flat Pack Commercial Ordering Code Definition CY7C 026A XX A X C Tem perature Grades C = Com m ercial I = Industrial X: Pb-free Package Type A: 100 pin TQFP Speed Bin: XX = 15 or 20 Density Com pany ID: CY = Cypress SRAM s Document #: 38-06046 Rev. *G Page 17 of 21 CY7C026A Package Diagram Figure 15. 100-Pin Pb-free Thin Plastic Quad Flat Pack (TQFP) A100 51-85048 *E Document #: 38-06046 Rev. *G Page 18 of 21 CY7C026A Acronyms Acronym Description CMOS complementary metal oxide semiconductor I/O input/output SRAM static random access memory TQFP thin quad plastic flatpack Document Conventions Units of Measure Symbol Unit of Measure °C degree Celsius mA milliamperes MHz megahertz mV millivolts ns nanoseconds pF picofarad V volts ohms W watts µA microamperes Document #: 38-06046 Rev. *G Page 19 of 21 CY7C026A Document History Page Document Title: CY7C026A 16K X 16 Dual-Port Static RAM Document Number: 38-06046 ECN No. Orig. of Change Submission Date ** 110198 SZV 09/29/01 Change from Spec number: 38-00832 to 38-06046 *A 122296 RBI 12/27/02 Power up requirements added to Maximum Ratings Information *B 237621 YDT See ECN Removed cross information from features section *C 393454 YIM See ECN Added Pb-free Logo Rev. Description of Change Added Pb-free parts to ordering information: CY7C026A-15AXC, CY7C026A-20AXC *D 2623540 VKN/PYRS 12/17/08 Added CY7C026B part Added CY7C026A-15AXI part in the Ordering Information table *E 2896038 RAME 03/19/10 Removed inactive parts from ordering information table Updated package diagram *F 3081925 ADMU 11/10/2010 Changed title from CY7C026A/026B, CY7C036A 16K X 16/18 DUAL-PORT STATIC RAM to CY7C026A 16K X 16 DUAL- PORT STATIC RAM Removed all information on CY7C026B and CY7C036A Removed information on speed bin 12. Added Acronyms and Units of Measure table. Added Ordering Code Definition. Updated as per new template *G 3403652 ADMU 10/14/2011 Removed pruned part CY7C026A-20AC from Ordering Information Updated Package Diagram. Document #: 38-06046 Rev. *G Page 20 of 21 CY7C026A Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2009-2011. The information contained herein is subject to change without notice. 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Document #: 38-06046 Rev. *G Revised October 14, 2011 All products and company names mentioned in this document may be the trademarks of their respective holders. Page 21 of 21