HZS-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise ADE-208-122A(Z) Rev. 1 Dec. 1996 Features • Vz-Iz characteristics are semilogarithmic linear from IZ=1nA to 1mA and have sharper breakdown knees in a low current region, and also lower VZ temperature coefficients . • Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the current zeners). • Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. Mark Package Code HZS-LL Series Type No. MHD Outline 2 A 2 1 Type No. Cathode band 1. Cathode 2. Anode HZS-LL Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –55 to +175 °C Electrical Characteristics (Ta = 25°C) VZ(V) * Type Grade Min 1 2 ∆VZ1(V) * ∆VZ2(V) * 3 IZ(mA) Max VR(V) Max IZT(mA) Typ IZK(µ µA) Max Max 0.5 100 0.5 350 0.5 (1.2) 50 0.5 0.6 0.5 100 1.0 360 0.5 (1.2) 50 0.5 0.6 0.5 100 2.0 370 0.5 (1.5) 50 0.5 0.6 0.5 100 3.0 380 0.5 (1.5) 50 0.5 0.6 1.6 2.0 B 1.9 2.3 C 2.2 2.6 HZS3LL A 2.5 2.9 B 2.8 3.2 C 3.1 3.5 HZS4LL A 3.4 3.8 B 3.7 4.1 C 4.0 4.4 HZS5LL A 4.3 4.7 B 4.6 5.0 C 4.9 5.3 1. 2. 3. 4. ZZK(kΩ Ω)* Max HZS2LL A Note: Note: Note: Note: ZZT(Ω Ω) IR(nA) Tested with DC. Reference only. ∆VZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA) ∆VZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA) Type No. is as follows; HZS2ALL, HZS2BLL, HZS5CLL. Rev.1, Dec. 1996, page 2 of 5 3 HZS-LL Series Main Characteristic 10 Zener Voltage Temperature Coefficient γ (%/°C) z 10 HZS5BLL Zener Current I Z (A) 10 -4 HZS4BLL HZS2BLL 10 -3 HZS3BLL −0.01 0 −0.02 -5 -6 10-7 10 -8 -9 0.5 %/°C mV/°C −0.03 1.0 −0.04 1.5 Zener Voltage Temperature Coefficient γ z (mV/°C) 10 -2 10 -10 10 0 1 2 3 4 6 5 8 7 Zener Voltage V Z(V) Fig.1 Zener current Vs. Zener voltage 250 −0.05 2.0 1 2 5 4 Zener Voltage V Z (V) 3 6 Fig.2 Temperature Coefficient Vs. Zener voltage 5mm 2.5 mm 3 mm Power Dissipation Pd (mW) 200 Printed circuit board 100 ×180 ×1.6t mm Quality: paper phenol 150 100 50 0 0 50 100 150 Ambient Temperature Ta (°C) 200 Fig.3 Power Dissipation Vs. Ambient Temperature Rev.1, Dec. 1996, page 3 of 5 HZS-LL Series Package Dimensions Unit: mm 2.4 Max 26.0 Min φ 2.0 Max 26.0 Min φ 0.4 1 2 A 2 Type No. (Navy blue) Cathode band (Navy blue) Abbreviation of type name Type name without HZS ••LL. 2 A Zener voltage classification symbol equal to B or C. Expanded drawing of marking Rev.1, Dec. 1996, page 4 of 5 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) MHD DO-34 0.084 HZS-LL Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.1, Dec. 1996, page 5 of 5