HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-117B(Z) Rev. 2 Nov. 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Ordering Information Type No. Mark Package Code HZ Series Type No. DO-35 Outline 1 7 B2 2 Type No. Cathode band 1. Cathode 2. Anode HZ Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 °C Storage temperature Tstg -55 to +175 °C Reverese Current Dynamic Resistance Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* 1 Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ2 A1 1.6 1.8 5 25 0.5 100 5 A2 1.7 1.9 A3 1.8 2.0 B1 1.9 2.1 5 5 0.5 100 5 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5 C3 2.4 2.6 A1 2.5 2.7 5 5 0.5 100 5 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4 C3 3.3 3.5 A1 3.4 3.6 5 5 1.0 100 5 A2 3.5 3.7 A3 3.6 3.8 HZ3 HZ4 Note: 1. Tested with DC. Rev.2, Nov. 1999, page 2 of 8 HZ Series Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ4 B1 3.7 3.9 5 5 1.0 100 5 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3 C3 4.2 4.4 A1 4.3 4.5 5 5 1.5 100 5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 B3 4.8 5.0 C1 4.9 5.1 C2 5.0 5.2 C3 5.1 5.3 A1 5.2 5.5 5 5 2.0 40 5 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3 C3 6.1 6.4 A1 6.3 6.6 5 1 3.5 15 5 A2 6.4 6.7 A3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 HZ5 HZ6 HZ7 Note: 1. Tested with DC. Rev.2, Nov. 1999, page 3 of 8 HZ Series Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ7 C1 7.2 7.6 5 1 3.5 15 5 C2 7.3 7.7 C3 7.5 7.9 A1 7.7 8.1 5 1 5.0 20 5 A2 7.9 8.3 A3 8.1 8.5 B1 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 A1 9.5 9.9 5 1 7.5 25 5 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 C1 10.9 11.3 C2 11.1 11.6 C3 11.4 11.9 A1 11.6 12.1 5 1 9.5 35 5 A2 11.9 12.4 A3 12.2 12.7 B1 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0 C3 13.8 14.3 HZ9 HZ11 HZ12 Note: 1. Tested with DC. Rev.2, Nov. 1999, page 4 of 8 HZ Series Zener Voltage VZ (V)* 1 Reverese Current Dynamic Resistance Test Condition µA) IR (µ Test Condition rd (Ω Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ15 1 14.1 14.7 5 1 11.0 40 5 2 14.5 15.1 3 14.9 15.5 1 15.3 15.9 5 1 12.0 45 5 2 15.7 16.5 3 16.3 17.1 1 16.9 17.7 5 1 13.0 55 5 2 17.5 18.3 3 18.1 19.0 1 18.8 19.7 2 1 15.0 60 2 2 19.5 20.4 3 20.2 21.1 1 20.9 21.9 2 1 17.0 65 2 2 21.6 22.6 3 22.3 23.3 1 22.9 24.0 2 1 19.0 70 2 2 23.6 24.7 3 24.3 25.5 1 25.2 26.6 2 1 21.0 80 2 2 26.2 27.6 3 27.2 28.6 1 28.2 29.6 2 1 23.0 100 2 2 29.2 30.6 3 30.2 31.6 1 31.2 32.6 2 1 25.0 120 2 2 32.2 33.6 3 33.2 34.6 1 34.2 35.7 2 1 27.0 140 2 2 35.3 36.8 3 36.4 38.0 HZ16 HZ18 HZ20 HZ22 HZ24 HZ27 HZ30 HZ33 HZ36 Note: Note: 1. Tested with DC. 2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3. Rev.2, Nov. 1999, page 5 of 8 HZ Series Main Characteristic Zener Current I Z (A) HZ36-2 HZ30-2 HZ24-2 HZ20-2 HZ16-2 HZ9B2 HZ2B2 HZ4B2 HZ6B2 10-3 HZ12B2 10-2 10-4 10-5 10-6 10-7 10-8 0 5 15 10 20 25 30 35 40 Zener Voltage V Z (V) Fig.1 Zener current Vs. Zener voltage 0.08 40 0.06 30 0.04 20 mV/°C 10 0.02 0 0 -0.02 -10 -0.04 -20 -0.06 -30 -0.08 -40 -0.10 0 5 -50 10 15 20 25 30 35 40 Zener Voltage VZ (V) Fig.2 Temperature Coefficient Vs. Zener voltage Rev.2, Nov. 1999, page 6 of 8 5mm 2.5 mm 3 mm 400 Power Dissipation Pd (mW) %/°C Zener Voltage Temperature Coefficient γ z (mV/°C) Zener Voltage Temperature Coefficient γ z (%/°C) 500 50 0.10 Printed circuit board 100 ×180 ×1.6t mm Quality: paper phenol 300 200 100 0 0 50 100 150 Ambient Temperature Ta (°C) 200 Fig.3 Power Dissipation Vs. Ambient Temperature HZ Series Package Dimensions Unit: mm 4.2 Max 26.0 Min φ 0.5 φ 2.0 26.0 Min Hitachi Code JEDEC EIAJ Mass DO-35 Conforms Conforms 0.13 g Rev.2, Nov. 1999, page 7 of 8 HZ Series Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.2, Nov. 1999, page 8 of 8