PANASONIC 2SC4638

Power Transistors
2SC4638
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
800
V
VCES
800
V
VCEO
500
V
Emitter to base voltage
VEBO
8
V
Peak collector current
ICP
10
A
Collector current
IC
5
A
Base current
IB
3
A
Collector to emitter voltage
Collector power TC=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
4.2±0.2
7.5±0.2
φ3.1±0.1
1.4±0.1
0.8±0.1
40
0.5 +0.2
–0.1
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2
■ Electrical Characteristics
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
Collector to emitter voltage
VCEO(sus)*
IC = 0.2A, L = 25mH
500
hFE1
VCE = 5V, IC = 0.1A
15
8
Forward current transfer ratio
1.3±0.2
2.54±0.25
PC
Ta=25°C
16.7±0.3
●
2.7±0.2
4.0
●
High-speed switching
High collector to base voltage VCBO
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
4.2±0.2
5.5±0.2
Solder Dip
●
10.0±0.2
0.7±0.1
■ Features
typ
VCB = 800V, IE = 0
max
Unit
100
µA
100
µA
V
hFE2
VCE = 5V, IC = 3A
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.6A
1
V
Base to emitter saturation voltage
VBE(sat)
IC = 3A, IB = 0.6A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
*V
CEO(sus)
Test circuit
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V
50/60Hz
mercury relay
8
MHz
1.0
µs
3
µs
1.0
µs
X
L 25mH
Y
120Ω
6V
1Ω
15V
G
1
Power Transistors
2SC4638
PC — Ta
IC — VCE
VCE(sat) — IC
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
70
60
7
50
(1)
40
30
20
(2)
10
Collector to emitter saturation voltage VCE(sat) (V)
8
Collector current IC (A)
Collector power dissipation PC (W)
80
IB=1200mA
6
1000mA
800mA
5
600mA
4
400mA
300mA
3
200mA
150mA
2
100mA
50mA
20mA
1
(3)
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
TC=–25˚C
100˚C
0.3
0.1
0.03
0.3
1
1
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03
3
0.1
0.3
1
10
fT — IC
300
100
TC=100˚C
25˚C
30
–25˚C
10
3
1
0.3
VCE=10V
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.3
0.1
0.01 0.03
10
3
Collector current IC (A)
Transition frequency fT (MHz)
3
0.1
TC=100˚C
VCE=5V
10
1
25˚C
3
1000
IC/IB=5
30
25˚C
10
hFE — IC
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
10
1000
0.01
0.01 0.03
Collector current IC (A)
0.1
0.3
1
3
0.1
0.01 0.03
10
Collector current IC (A)
Cob — VCB
0.1
0.3
1
3
10
Collector current IC (A)
ton, tstg, tf — IC
Area of safe operation (ASO)
100
10000
IE=0
f=1MHz
TC=25˚C
3000
1000
300
100
30
10
10
0.3
10
30
100
ICP
IC
3
t=0.5ms
1
1ms
0.3
10ms
DC
0.1
0.03
0.01
0.01
3
tf
0.1
1
0.1
1
ton
1
0.03
Collector to base voltage VCB (V)
10
tstg
3
3
0.3
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(IB1=–IB2)
VCC=250V
TC=25˚C
30
Switching time ton,tstg,tf (µs)
Collector output capacitance Cob (pF)
8
IC/IB=5
30
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
2
6
Collector current IC (A)
0
100
Non repetitive pulse
0.003 T =25˚C
C
0
1
2
3
4
5
6
7
Collector current IC (A)
8
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Power Transistors
2SC4638
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
8
Lcoil=50µH
IC/IB=5
(IB1=–IB2)
TC=100˚C
Collector current IC (A)
7
L coil
6
IB1
5
T.U.T
–IB2
Vin
4
IC
VCC
3
2
Vclamp
tW
1
0
0
100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
10
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3