Power Transistors 2SC4096 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 1400 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 10 A Base current IB 5 A Collector power TC=25°C dissipation Ta=25°C 150 PC Junction temperature Tj Storage temperature Tstg 4.0 10.0 2.0 2.0 1.5 2.0±0.3 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package W 3.5 ■ Electrical Characteristics 1.5 Solder Dip ● 26.0±0.5 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 1.5 ● 20.0±0.5 2.5 ● 6.0 ■ Features 3.0 20.0±0.5 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 1400V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 10mA, IB = 0 800 Forward current transfer ratio hFE VCE = 5V, IC = 5A 5 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 1A 5 V Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 1A 1.5 V Transition frequency fT VCE = 5V, IC = 1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf IC = 5A, IB1 = 1A, IB2 = –2A, VCC = 250V V 15 13 MHz 1.0 µs 3.5 µs 0.3 µs 1 Power Transistors 2SC4096 PC — Ta 100 50 TC=25˚C 10 IB=1A 8 0.7A 6 0.5A 4 0.2A 0.1A 2 0.05A (3) (2) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 3 TC=–25˚C 25˚C 100˚C 0.3 1 3 10 30 300 100 30 TC=100˚C 10 25˚C –25˚C 3 1 0.1 100 0.3 Cob — VCB 1 3 10 30 0.03 0.01 0.1 0.3 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C 100 Collector to base voltage VCB (V) 10 30 100 VCE=5V f=1MHz TC=25˚C 300 100 30 10 3 0.1 0.3 1 3 10 10 3 tstg 1 0.3 ton tf 0.1 Non repetitive pulse TC=25˚C 30 ICP 10 IC t=0.05ms 3 0.1ms 1 0.5ms 1ms 0.3 10ms DC 0.1 0.03 0.01 0.01 30 3 Area of safe operation (ASO) 0.03 10 1 Collector current IC (A) Collector current IC (A) 300 10 0.1 100 30 Switching time ton,tstg,tf (µs) 1000 3 –25˚C 0.3 1 0.01 0.03 100 ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C TC=100˚C Collector current IC (A) 100 1 25˚C 1 Collector current IC (A) 10000 3000 3 1000 VCE=5V Collector current IC (A) Collector output capacitance Cob (pF) 12 10 fT — IC 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 10 IC/IB=5 30 hFE — IC IC/IB=5 0.1 0.1 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 2 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (1) 150 IC — VCE 12 Collector current IC (A) Collector power dissipation PC (W) 200 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC4096 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit Collector current IC (A) 20 Lcoil=100µH IC/IB1=5 (IB1=–IB2) TC=25˚C ICP 15 L coil IB1 –IB2 Vin 10 5 T.U.T IC VCC Vclamp tW <1mA 0 0 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3