Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC3982 base voltage 2SC3982A Collector to (TC=25˚C) 2SC3982 emitter voltage 2SC3982A Ratings Unit 900 VCBO 900 V Emitter to base voltage VEBO 7 V Peak collector current ICP 15 A Collector current IC 10 A Base current IB 5 A 150 PC Junction temperature Tj Storage temperature Tstg 2SC3982 current 2SC3982A 150 ˚C –55 to +150 ˚C Symbol 4.0 2.0 2.0 10.0 3 ICBO Conditions min typ max VCB = 900V, IE = 0 50 VCB = 1000V, IE = 0 50 50 Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 hFE1 VCE = 5V, IC = 0.1A 8 6 Forward current transfer ratio 2 (TC=25˚C) Parameter Collector cutoff 1 1:Base 2:Collector 3:Emitter TOP–3L Package W 3.5 ■ Electrical Characteristics 0.6±0.2 V 1000 800 Ta=25°C 1.0±0.2 5.45±0.3 VCEO dissipation 2.7±0.3 10.9±0.5 Collector to emitter voltage Collector power TC=25°C 1.5 2.0±0.3 3.0±0.3 V 1000 VCES 1.5 Solder Dip ● 26.0±0.5 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 1.5 ● 20.0±0.5 2.5 ● 6.0 ■ Features 3.0 20.0±0.5 hFE2 VCE = 5V, IC = 4A Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.8A Base to emitter saturation voltage VBE(sat) IC = 4A, IB = 0.8A Transition frequency fT VCE = 5V, IC = 1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf IC = 4A, IB1 = 0.8A, IB2 = –1.6A, VCC = 250V 800 Unit µA µA V 1.5 1.5 V V MHz 15 0.7 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC3982, 2SC3982A PC — Ta IC — VCE VCE(sat) — IC 12 Collector to emitter saturation voltage VCE(sat) (V) 200 (1) 150 100 50 IB=2A 10 Collector current IC (A) 1A 8 0.5A 6 0.4A 0.3A 4 0.2A 0.1A 2 (3) (2) 0.05A 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 3 TC=–25˚C 25˚C 0.3 0.3 1 3 10 30 100 TC=100˚C 30 25˚C –25˚C 10 3 0.3 3 10 30 IE=0 f=1MHz TC=25˚C 1000 300 100 30 0.01 0.1 0.3 10 100 Collector to base voltage VCB (V) 3 10 30 100 VCE=5V f=1MHz TC=25˚C 30 10 3 1 0.3 0.1 0.3 1 3 10 Area of safe operation (ASO) 100 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C 30 10 3 tstg 1 0.3 tf 0.1 Non repetitive pulse TC=25˚C 30 ton ICP 10 t=0.1ms IC 0.5ms 3 1ms 1 10ms DC 0.3 0.1 0.03 0.01 0.01 30 1 Collector current IC (A) 0.03 10 0.03 0.1 0.01 0.03 100 ton, tstg, tf — IC Switching time ton,tstg,tf (µs) Collector output capacitance Cob (pF) 1 100 3 0.1 Collector current IC (A) Cob — VCB 1 0.3 100 300 1 0.1 100 10000 3000 25˚C TC=100˚C –25˚C 1 Collector current IC (A) VCE=5V Collector current IC (A) 2 12 3 fT — IC 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 0.1 10 10 hFE — IC IC/IB=5 100˚C 8 IC/IB=5 30 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 100 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3982, 2SC3982A Area of safe operation, reverse bias ASO 16 ICP Lcoil=100µH IC/IB=5 (IB1=–IB2) TC=25˚C 14 L coil 12 IB1 T.U.T IC IC 10 –IB2 Vin 8 VCC 6 4 2 0 0 Vclamp tW 2SC3982A 2SC3982 Collector current IC (A) Reverse bias ASO measuring circuit 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) 10 (2) 1 10–1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3