WEDC W3DG6463V10D2-S

White Electronic Designs
W3DG6463V-D2
PRELIMINARY*
512MB – 2x32Mx64 SDRAM UNBUFFERED
FEATURES
DESCRIPTION
Burst Mode Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the positive
edge of the system clock
The W3DG6463V is a 2x32Mx64 synchronous DRAM
module which consists of sixteen 32Mx8 SDRAM
components in TSOP II package and one 2K EEPROM
in an 8 pin TSSOP package for Serial Presence Detect
which are mounted on a 168 pin DIMM multilayer FR4
Substrate.
Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
Available in WP (Write Protect) option as:
* This product is under development, is not qualified or characterized and is subject to
change without notice.
• W3DG6363V-D2
3.3V ± 0.3V Power Supply
Dual Rank
168 pin DIMM JEDEC
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Front
VSS
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
VCC
DQ14
DQ15
*CB0
*CB1
VSS
NC
NC
VCC
WE#
DQM0
Pin
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Front
DQM1
CS0#
DNU
VSS
A0
A2
A4
A6
A8
A10/AP
BA1
VCC
VCC
CK0
VSS
DNU
CS2#
DQM2
DQM3
DNU
VCC
NC
NC
*CB2
*CB3
VSS
DQ16
DQ17
Pin
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Front
DQ18
DQ19
VCC
DQ20
NC
*VREF
CKE1
VSS
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
DQ26
DQ27
VCC
DQ28
DQ29
DQ30
DQ31
VSS
CK2
NC
WP***
**SDA
**SCL
VDD
Pin
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Back
VSS
DQ32
DQ33
DQ34
DQ35
VCC
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
VCC
DQ46
DQ47
*CB4
*CB5
VSS
NC
NC
VCC
CAS#
DQM4
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
CS1#
RAS#
VSS
A1
A3
A5
A7
A9
BA0
A11
VCC
CK1
*A12
VSS
CKE0
CS3#
DQM6
DQM7
*A13
VCC
NC
NC
*CB6
*CB7
VSS
DQ48
DQ49
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
PIN NAMES
Back
DQ50
DQ51
VCC
DQ52
NC
*VREF
DNU
VSS
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VCC
DQ60
DQ61
DQ62
DQ63
VSS
CK3
NC
**SA0
**SA1
**SA2
VCC
A0 – A11
BA0-1
DQ0-63
CK0-CK3
CKE0,CKE1
CS0#-CS3#
RAS#
CAS#
WE#
DQM0-7#
VCC
VSS
SDA
SCL
DNU
NC
WP
Address input (Multiplexed)
Select Bank
Data Input/Output
Clock input
Clock Enable input
Chip select Input
Row Address Strobe
Column Address Strobe
Write Enable
DQM
Power Supply (3.3V)
Ground
Serial data I/O
Serial clock
Do not use
No Connect
Write Protect
* These pins are not used in this module.
** These pins should be NC in the system which does not
support SPD.
*** WP available on the WED3DG6363V-D2 only.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
FUNCTIONAL BLOCK DIAGRAM
CS1#
CSO#
DQM0
DQM4
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
CS3#
CS2#
DQM2
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
cs#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQM6
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM3
DQM7
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
A0 ~ A12, BA0 & 1
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
VCC
SDRAM
A0
RAS#
SDRAM
CAS#
SDRAM
WE#
SDRAM
CKE0
SDRAM
A2
SDRAM
SDRAMs
SDRAMs
10Ω
10Ω
DQn
A1
SA0 SA1 SA2
10KΩ
CKE1
SDA
WP
SCL
CK0/1/2/3
Every DQpin of SDRAM
SDRAMs
SDRAMs
VCC
Two 0.1uF Capacitors
per each SDRAM
1.5pF
To all SDRAMs
VSS
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 ~ 4.6
V
°C
TSTG
-55 ~ +150
Power Dissipation
PD
16
W
Short Circuit Current
IOS
50
mA
Storage Temperature
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: VSS = 0V, 0°C ≤ TA ≤ 70°C
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
3.0
3.3
3.6
V
Note
Input High Voltage
VIH
2.0
3.0
VCCQ+0.3
V
1
Input Low Voltage
VIL
-0.3
—
0.8
V
2
Output High Voltage
VOH
2.4
—
—
V
IOH= -2mA
Output Low Voltage
VOL
—
—
0.4
V
IOL= -2mA
Input Leakage Current
ILI
-10
—
10
A
3
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VCCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
TA = 23°C, f = 1MHz, VCC = 3.3V, VREF = 1.4V ± 200mV
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
CIN1
100
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
100
pF
Input Capacitance (CKE0)
CIN3
60
pF
Input Capacitance (CK0-CK3)
CIN4
45
pF
Input Capacitance (CS0#,CS3#)
CIN5
35
pF
Input Capacitance (DQM0-DQM7)
CIN6
20
pF
Input Capacitance (BA0-BA1)
CIN7
100
pF
Data input/output capacitance (DQ0-DQ63)
COUT
15
pF
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
VCC = 3.3V, 0°C ≤ TA ≤ 70°C
Parameters
Operating Current
(One bank active)
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non-Power Down Mode
Active standby current in power-down
mode
Active standby in current non powerdown mode
Symbol
Conditions
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
Versions
133
100
1200
1040
Units
Note
mA
1
ICC2P
CKE ≤ VIL(max), tCC = 10ns
35
mA
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
35
mA
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
Input signals are charged one time during 20
320
mA
ICC2NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC= ∞
Input signals are stable
160
mA
ICC3P
CKE ≥ VIL(max), tCC = 10ns
100
mA
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
100
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are charged one time during 20ns
480
mA
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tCC = ∞
input signals are stable
400
mA
Operating current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
1280
1120
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
2000
1760
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
50
mA
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
VCC, VCCQ = +3.3V ±0.3V
AC CHARACTERISTICS
7
PARAMETER
Access timefrom CLK (pos.edge)
SYMBOL
CL = 3
tAC(3)
CL = 2
tAC(2)
Address hold time
MIN
7.5
MAX
MIN
5.4
10
MAX
MIN
5.4
5.4
6
MAX
UNITS
NOTE
6
ns
27
6
ns
tAH
0.8
0.8
1
ns
Address setup time
tAS
1.5
1.5
2
ns
CLK high-level width
tCH
2.5
2.5
3
ns
CLK low-level width
tCL
2.5
2.5
3
ns
CL = 3
tCK(3)
7
7.5
8
ns
23
CL = 2
tCK(2)
7.5
10
10
ns
23
tCKH
0.8
0.8
1
ns
CKE setup time
tCKS
1.5
1.5
2
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
0.8
0.8
1
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
1.5
1.5
2
ns
Data-in hold time
tDH
0.8
0.8
1
ns
Data-in setup time
tDS
1.5
1.5
2
ns
Clock cycle time
CKE hold time
Data-out high-impedance time
CL = 3
tHZ(3)
5.4
5.4
6
ns
10
CL = 2
tHZ(2)
5.4
6
6
ns
10
Data-out low-impedance time
tLZ
1
1
1
ns
Data-out hold time (load)
tOH
2.7
2.7
2.7
ns
Data-out hold time (no load)
tOHN
1.8
ACTIVE to PRECHARGE command
tRAS
37
ACTIVE to ACTIVE command period
tRC
60
66
66
ns
ACTIVE to READ or WRITE delay
tRCD
15
20
20
ns
Refresh period
tREF
64
64
64
ms
AUTOREFRESH period
tRFC
66
66
66
ns
PRECHARGE command period
tRP
15
20
20
ns
ACTIVE bank a to ACTIVE bank b command
tRRD
14
tT
0.3
tWR
1 CLK
+
7ns
1 CLK
+
7.5ns
1 CLK
+
7.5ns
14
15
15
ns
25
67
75
80
ns
20
Transition time
WRITE recovery time
Exit SELF REFRESH to ACTIVE command
tXSR
1.8
120,000
1.8
44
120,000
15
1.2
50
ns
120,000
15
0.3
1.2
0.3
28
ns
ns
1.2
ns
7
24
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
AC FUNCTIONAL CHARACTERISTICS
VCC, VCCQ = +3.3V ±0.3V
PARAMETER
SYMBOL
7
7.5
10
UNITS
NOTES
READ/WRITE command to READ/WRITE command
tCCD
1
1
1
tCK
17
CKE to clock disable or power-down entry mode
tCKED
1
1
1
tCK
14
CKE to clock enable or power-down exit setup mode
tPED
1
1
1
tCK
14
DQM to input data delay
tDQD
0
0
0
tCK
17
DQM to data mask during WRITEs
tDQM
0
0
0
tCK
17
DQMto data high-impedance during READs
tDQZ
2
2
2
tCK
17
WRITE command to input data delay
tDWD
0
0
0
tCK
17
Data-into ACTIVE command
tDAL
4
5
5
tCK
15, 21
Data-into PRECHARGE command
tDPL
2
2
2
tCK
16, 21
Last data-in to burst STOP command
tBDL
1
1
1
tCK
17
Last data-in to new READ/WRITE command
tCDL
1
1
1
tCK
17
Lastdata-into PRECHARGE command
tRDL
2
2
2
tCK
16, 21
LOADMODEREGISTER command to ACTIVE or REFRESH command
tMRD
2
2
2
tCK
26
CL = 3
tROH(3)
3
3
3
tCK
17
CL = 2
tROH(2)
2
2
2
tCK
17
Data-out to high-impedance from PRECHARGE command
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
Notes
1.
All voltages referenced to VSS.
2.
This parameter is sampled. VCC, VCCQ = +3.3V; TA = 25°C; pin under test biased at
1.4V; f = 1 MHz.
3.
IDD is dependent on output loading and cycle rates. Specified values are obtained
with mini-mum cycle time and the outputs open.
4.
Enables on-chip refresh and address counters.
5.
The minimum specifications are used only to indicate cycle time at which proper
operation over the full temperature range is ensured.
6.
An initial pause of 100µs is required after power-up, followed by two AUTO
REFRESH commands, before proper device operation is ensured. (VCC and VCCQ
must be powered up simultaneously. VSS and VSSQ must be at same potential.) The
two AUTO REFRESH command wake-ups should be repeated any time the tREF
refresh requirement is exceeded.
7.
AC characteristics assume tT = 1ns.
8.
In addition to meeting the transition rate specification, the clock and CKE must
transit between VIH and VIL (or between VIL and VIH) in a mono-tonic manner.
9.
Outputs measured at 1.5V with equivalent load:
14. Timing actually specified by tCKS; clock(s) specified as a reference only at minimum
cycle rate.
15. Timing actually specified by tWR plus tRP; clock(s) specified as a reference only at
minimum cycle rate.
16. Timing actually specified by tWR.
17. Required clocks are specified by JEDEC functionality and are not dependent on
any timing parameter.
18. The IDD current will increase or decrease proportionally according to the amount of
frequency alteration for the test condition.
19. Address transitions average one transition every two clocks.
20. CLK must be toggled a minimum of two times during this period.
21. Based on tCK = 10ns for 10, and tCK = 7.5ns for 7 and 7.5.
22. VIH overshoot: VIH (MAX) = VCCQ + 2V for a pulse width ≤ 3ns, and the pulse width
cannot be greater than one third of the cycle rate. VIL under-shoot: VIL (MIN) = -2V
for a pulse width ≤ 3ns.
23. The clock frequency must remain constant (stable clock is defined as a signal
cycling within timing constraints specified for the clock pin) during access or
precharge states (READ, WRITE, including tWR, and PRECHARGE commands).
CKE may be used to reduce the data rate.
Q
50pF
24. Auto precharge mode only. The precharge timing budget (tRP) begins 7ns for 7;
7.5ns for 7.5 and 7.5ns for 10 after the first clock delay, after the last WRITE is
executed. May not exceed limit set for precharge mode.
10. tHZ defines the time at which the output achieves the open circuit condition; it is not
a reference to VOH or VOL. The last valid data element will meet tOH before going
High-Z.
25. Precharge mode only.
26. JEDEC and PC133, PC100 specify three clocks.
11. AC timing and IDD tests have VIL = 0V and VIH = 3V with timing referenced to 1.5V
crossover point. If the input transition time is longer than 1ns, then the timing is
referenced at VIL (MAX) and VIH (MIN) and no longer at the 1.5V crossover point.
27. tAC for 7/7.5 at CL = 3 with no load is 4.6ns and is guaranteed by design.
28. Parameter guaranteed by design.
12. Other input signals are allowed to transition no more than once every two clocks
and are other-wise at valid VIH or VIL levels.
13. IDD specifications are tested after the device is properly initialized.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
ORDERING INFORMATION
Part Number
Speed
CAS Latency
Height*
Speed
CAS Latency
Height*
W3DG6463V10D2-x
100MHz
CL=2
30.48 (1.20")
W3DG6363V10D2-x
Part Number
100MHz
CL=2
30.48 (1.20")
W3DG6463V7D2-x
133MHz
CL=2
30.48 (1.20")
W3DG6363V7D2-x
133MHz
CL=2
30.48 (1.20")
W3DG6463V75D2-x
133MHz
CL=3
30.48 (1.20")
W3DG6363V75D2-x
133MHz
CL=3
30.48 (1.20")
NOTES:
Note: Available with WP (write protect) on pin 81.
• Consult Factory for availability of RoHS compliant products. (G = RoHS
Compliant)
• Vendor specific part numbers are used to provide memory components source
control. The place holder for this is shown as lower case “x” in the part numbers
above and is to be replaced with the respective vendors code. Consult factory
for qualified sourcing options. (M = Micron, S = Samsung, G = Infineon & consult
factory for others)
• Consult factory for availability of industrial temperature (-40°C to 85°C) option
PACKAGE DIMENSIONS
133.48
(5.255 MAX.)
3.81
(0.150)
MAX.
3.18
(0.125) (2X)
3.99
(0.157)
(2X)
30.48
(1.200)
17.78 MAX.
(0.700)
P1
11.43
(0.450)
8.89
(0.350)
36.83
(1.450)
54.61
(2.150)
6.35
(0.250)
42.16
(1.660)
3.99
(0.157 MIN.)
6.35
(0.250)
1.27 ± 0.10
(0.050 ± 0.004)
115.57
(4.550)
*ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES)
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
PART NUMBERING GUIDE
W 3 D G 64 63 V xx D2 - x G
WEDC
MEMORY
SDRAM
GOLD
DATA BUS WIDTH 64 BITS
DENSITY
3.3V
10 = 100MHz; CL=2,
7 = 133MHz; CL=2,
7.5 = 133MHz; CL=3
PACKAGE 168 PIN
COMPONENT VENDOR NAME
(M = Micron)
(S = Samsung)
(G = Infineon)
G = RoHS COMPLIANT
BLANK = STANDARD PROCESS
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
W3DG6463V-D2
PRELIMINARY
Document Title
512MB – 2x32Mx64 SDRAM UNBUFFERED
Revision History
Rev #
History
Release Date
Status
Rev 0
Created
8-02
Advanced
Rev 1
1.0 Removed "ED" from part number
1-05
Advanced
7-05
Preliminary
1.1 Added lead-free and RoHS notes
1.2 Added source control notes
1.3 Added industrial temperature options
1.4 Added new document title page
1.5 Added AC specs
Rev2
2.1 Added to indicate “G” for Infineon Source used.
2.2 Added part number matrix
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
July 2005
Rev. 2
10
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com