Bulletin PD-20786 rev. A 07/04
10BQ100PbF
1 Amp
SCHOTTKY RECTIFIER
IF(AV) = 1.0Amp
VR = 100V
Major Ratings and Characteristics
Characteristics
Description/ Features
Value
Units
IF(AV) Rectangular waveform
1.0
A
VRRM
100
V
IFSM @ tp = 5 µs sine
780
A
VF
@ 1.0 Apk, TJ=125°C
0.62
V
TJ
range
- 55 to 175
°C
The 10BQ100PbF surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Case Styles
10BQ100PbF
SMB
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1
10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Voltage Ratings
Part number
VR
10BQ100PbF
Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
10BQ
Units Conditions
IF(AV) Max. Average Forward Current
1.0
A
50% duty cycle @ T L = 152 °C, rectangular wave form
IFSM
780
A
5µs Sine or 3µs Rect. pulse
Max. Peak One Cycle Non-Repetitive
Surge Current
38
EAS
Non- Repetitive Avalanche Energy
1.0
mJ
10ms Sine or 6ms Rect. pulse
IAR
Repetitive Avalanche Current
0.5
A
10BQ
Units
Following any rated
load condition and
with rated V RRM applied
TJ = 25 °C, IAS = 0.5A, L = 8mH
Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
VFM
Max. Forward Voltage Drop
(1)
* See Fig. 1
IRM
Max. Reverse Leakage Current (1)
* See Fig. 2
Conditions
0.78
V
@ 1A
0.89
V
@ 2A
0.62
V
@ 1A
0.72
V
@ 2A
0.5
mA
TJ = 25 °C
1
mA
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VR
CT
Typical Junction Capacitance
42
pF
VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LS
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
10000
V/ µs
dv/dt Max. Volatge Rate of Charge
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
10BQ
TJ
Max. Junction Temperature Range (*) - 55 to 175
Tstg
Max. Storage Temperature Range
- 55 to 175
Units
Conditions
°C
°C
RthJL Max. Thermal Resistance Junction
to Lead
(**)
36
°C/W DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
80
°C/W
0.10 (0.003) g (oz.)
Case Style
SMB
Device Marking
IR1J
(*) dPtot
dTj
<
1
Rth( j-a)
Similar DO-214AA
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
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10BQ100PbF
Bulletin PD-20786 rev. A 07/04
10
10
Tj = 175˚C
Reverse Current - I R (mA)
Tj = 175˚C
(A)
Tj = 125˚C
Tj = 25˚C
F
150˚C
125˚C
0.1
100˚C
75˚C
0.01
50˚C
0.001
25˚C
0.0001
0.00001
0
20
40
60
80
100
Reverse Voltage - VR (V)
1
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
T = 25˚C
Junction Capacitance - C T (p F)
Instantaneous Forward Current - I
1
0.1
0.2
J
10
0.4
0.6
0.8
1
0
20
Forward Voltage Drop - VFM (V)
40
60
80
100
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
100
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
1
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
.
100
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg)
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3
10BQ100PbF
Bulletin PD-20786 rev. A 07/04
1
170
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
160
Average Power Loss (Watts)
Allowable Lead Temperature (°C)
180
150
140
130 Square wave (D = 0.50)
Rated Vr applied
120
see note (2)
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.8
0.6
DC
RMS Limit
0.4
0.2
0
0
0.4
0.8
1.2
1.6
0
Average Forward Current - I F(AV) (A)
0.3
0.6
0.9
1.2
1.5
Average Forward Current - I F(AV) (A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Non-Repetitive Surge Current - I
(A)
FSM
1000
100
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - Tp (Microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd REV = Inverse Power Loss = VR1 x I R (1 - D); IR @ VR1 = 80% rated VR
4
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10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Outline Table
CATHODE
Device Marking: IR1J
2.15 (.085)
1.80 (.071)
1
3.80 (.150)
3.30 (.130)
1
4.70 (.185)
POLARITY
ANODE
2
2 PART NUMBER
4.10 (.161)
2.5 TYP.
(.098 TYP.)
2.40 (.094)
1.90 (.075)
0.30 (.012)
0.15 (.006)
1.30 (.051)
0.76 (.030)
5.60 (.220)
5.00 (.197)
2.0 TYP.
(.079 TYP.)
SOLDERING PAD
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1J
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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5
10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
10
B
Q
100
1
2
3
4
TR PbF
5
6
1
-
Current Rating
2
-
B = Single Lead Diode
3
-
Q = Schottky Q Series
4
-
Voltage Rating (100 = 100V)
5
-
y none = Box (1000 pieces)
y TR = Tape & Reel
6
-
(3000 pieces)
y none = Standard Production
y PbF = Lead-Free
10BQ100
********************************************************************************
* SPICE Model Diode
*
********************************************************************************
.SUBCKT 10BQ100 ANO CAT
D1 ANO 1 CAT
*Define diode model
.model D10BQ100 D(Is=341.4E-06 N=2.664 Rs=3.65E-03 Ikf=37.08E-03 Xti=2 Eg=1.11
+
Cjo=65.57E-12 M=.5751 Vj=4.282 Fc=0.5 Isr=17.26E-27 Nr=5.662
+
Bv=119.9 Ibv=215.5E-06 Tt=43.28E-09)
********************************************************************************
.ENDS 10BQ100
6
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10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
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7