Bulletin PD-20708 rev. G 07/04 10BQ030 1 Amp SCHOTTKY RECTIFIER IF(AV) = 1 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics 10BQ030 Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 ms sine 430 A 0.30 V - 55 to 150 °C The 10BQ030 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection. Small foot print, surface mountable Very low forward voltage drop VF @ 1.0Apk, TJ= 125°C TJ range High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 10BQ030 SMB www.irf.com 1 10BQ030 Bulletin PD-20708 rev. G 07/04 Voltage Ratings Part number VR 10BQ030 Max. DC Reverse Voltage (V) 30 VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 10BQ Units IF(AV) Max. Average Forward Current 1.0 A IFSM 430 Max. Peak One Cycle Non-Repetitive Conditions 50% duty cycle @ TL = 106 °C, rectangular wave form. Following any rated load condition and 10ms Sine or 6ms Rect. pulse with rated VRRM applied 5µs Sine or 3µs Rect. pulse Surge Current * See Fig. 6 90 EAS Non-Repetitive Avalanche Energy 3.0 mJ IAR Repetitive Avalanche Current 1.0 A TJ = 25 °C, IAS = 1A, L = 6mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. Va = 1.5 x Vr typical Electrical Specifications Parameters VFM VFM 10BQ Max. Forward Voltage Drop Max. Forward Voltage Drop (1) (1) Units Conditions 0.420 V @ 1A 0.470 V @ 2A 0.300 V @ 1A 0.370 V @ 2A TJ = 25 °C TJ = 125 °C 0.5 mA TJ = 25 °C IRM Max. Reverse Leakage Current (1) 5.0 mA TJ = 100 °C 15 mA TJ = 125 °C CT Max. Junction Capacitance 200 pF VR = 5VDC, (test signal range 100KHz to 1Mhz) 25°C LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body 10000 V/µs dv/dt Max. Voltage Rate of Change VR = rated VR (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters 10BQ Units TJ Max. Junction Temperature Range (*) - 55 to 150 °C Tstg Max. Storage Temperature Range °C - 55 to 150 Conditions RthJL Max. Thermal Resistance Junction to Lead (**) 25 °C/W DC operation RthJA Max. Thermal Resistance Junction to Ambient wt Approximate Weight 80 °C/W 0.10 (0.003) g (oz.) Case Style SMB Device Marking IR1E (*) dPtot dTj < 1 Rth( j-a) Similar DO-214AA thermal runaway condition for a diode on its own heatsink (**) Mounted 1 inch square PCB 2 www.irf.com 10BQ030 Bulletin PD-20708 rev. G 07/04 10 TJ = 125°C 1 100°C 75°C 0.1 50°C 0.01 25°C 0.001 0.0001 0 10 20 TJ = 125°C Reverse Voltage - VR (V) TJ = 25°C Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 1 30 1000 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Junc tion Capa citance - C T (pF) Instantaneous Forward Current - I F (A) Reverse Current - I R (mA) 10 TJ = 25°C 100 10 0 10 20 30 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 10BQ030 Bulletin PD-20708 rev. G 07/04 0.5 DC Average Power Loss - (Watts) Allowable Case Temperature - (°C) 130 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 110 100 Square wave (D = 0.50) 80% Rated VR applied D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.4 0.3 DC RMSLimit 0.2 0.1 see note (2) 90 0 0.4 0.8 1.2 0 1.6 0 Average Forward Current - I F(AV) (A) 0.8 1.2 1.6 Fig. 5 - Maximum Average Forward Dissipation Vs. Average Forward Current Fig. 4 - Maximum Average Forward Current Vs. Allowable Lead Temperature Non-Repetitive Surge Current - I FSM (A) 0.4 Average Forward Current - I F(AV) (A) 1000 100 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 10 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 10BQ030 Bulletin PD-20708 rev. G 07/04 Outline Table Device Marking: IR1E CATHODE 2.15 (.085) 1.80 (.071) 1 3.80 (.150) 3.30 (.130) ANODE 2 1 POLARITY 4.70 (.185) 2 PART NUMBER 4.10 (.161) 2.5 TYP. (.098 TYP.) 2.40 (.094) 1.90 (.075) 1.30 (.051) 0.76 (.030) 0.30 (.012) 0.15 (.006) 5.60 (.220) 5.00 (.197) 2.0 TYP. (.079 TYP.) SOLDERING PAD 4.2 (.165) 4.0 (.157) Outline SMB Dimensions in millimeters and (inches) For recommended footprint and soldering techniques refer to application note #AN-994 Marking & Identification Each device has 2 rows for identification. The first row designates the device as manufactured by International Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID. IR1E VOLTAGE CURRENT IR LOGO YYWWX SITE ID WEEK 2nd digit of the YEAR "Y" = 1st digit of the YEAR "standard product" "P" = "Lead-Free" www.irf.com 5 10BQ030 Bulletin PD-20708 rev. G 07/04 Tape & Reel Information Dimensions in millimetres and (inches) Ordering Information Table Device Code 10 B Q 030 TR - 1 2 3 4 5 6 1 - 2 - Current Rating B = Single Lead Diode 3 - Q = Schottky Q Series 4 - Voltage Rating (030 = 30V) 5 - y none = Box (1000 pieces) y TR = Tape & Reel (3000 pieces) 6 y none = Standard Production y PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/04 6 www.irf.com