IRF 10MQ040

Bulletin PD-20772 rev. A 07/04
10MQ040NPbF
SCHOTTKY RECTIFIER
2.1 Amp
IF(AV) = 2.1Amp
VR = 40V
Major Ratings and Characteristics
Characteristics
Description/ Features
The 10MQ040NPbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Value
Units
2.1
A
VRRM
40
V
Small foot print, surface mountable
IFSM @ tp = 5 µs sine
120
A
Low forward voltage drop
High frequency operation
0.56
V
- 55 to 150
°C
IF
DC
Guard ring for enhanced ruggedness and long term
VF
@ 1.5Apk, TJ=125°C
TJ
range
reliability
Lead-Free ("PbF" suffix)
Case Styles
10MQ040NPbF
SMA
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1
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Voltage Ratings
Part number
VR
10MQ040NPbF
Max. DC Reverse Voltage (V)
40
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
10MQ Units
IF(AV) Max. Average Forward Current
* See Fig. 4
1.5
IFSM
120
Max. Peak One Cycle Non-Repetitive
A
A
Conditions
50% duty cycle @ TL = 123 °C, rectangular wave form.
On PC board 9mm2 island(.013mm thick copper pad area)
Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRM applied
5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6
30
EAS
Non-Repetitive Avalanche Energy
3.0
mJ
IAR
Repetitive Avalanche Current
1.0
A
10MQ
Units
0.54
V
@ 1A
0.62
V
@ 1.5A
TJ = 25 °C, IAS = 1A, L = 6mH
Electrical Specifications
Parameters
VFM
Max. Forward Voltage Drop
(1)
* See Fig. 1
Conditions
TJ = 25 °C
0.49
V
@ 1A
0.56
V
@ 1.5A
Max. Reverse Leakage Current (1)
0.5
mA
TJ = 25 °C
* See Fig. 2
26
mA
TJ = 125 °C
VF(TO) Threshold Voltage
0.36
V
TJ = TJ max.
rt
Forward Slope Resistance
104
mΩ
CT
Typical Junction Capacitance
38
pF
VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LS
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
10000
V/µs
IRM
dv/dt Max. Voltage Rate of Change
TJ = 125 °C
VR = rated VR
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
10MQ
Units
TJ
Max. Junction Temperature Range (*) - 55 to 150
°C
Tstg
Max. Storage Temperature Range
°C
RthJA Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
80
SMA
Device Marking
IR1F
dTj
<
1
Rth( j-a)
°C/W DC operation
0.07(0.002) g (oz.)
Case Style
(*) dPtot
2
- 55 to 150
Conditions
Similar D-64
thermal runaway condition for a diode on its own heatsink
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
100
Reverse Current - I R (mA)
10
TJ= 150°C
125°C
1
100°C
0.1
75°C
50°C
0.01
25°C
0.001
Tj = 125˚C
0.0001
Tj = 25˚C
0
5
10
15
20
25
30
35
40
Reverse Voltage - V R (V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1
100
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Junction Capacitance - C T (pF)
Instantaneous Forward Curent - IF (A)
Tj = 150˚C
10
TJ= 25°C
10
0
5
10
15
20
25
30
35
40
Reverse Voltage - V R(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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10MQ040NPbF
150
1.4
140
1.2
Average Power Loss - (Watt s)
Allowable Case Temperature - (°C)
Bulletin PD-20772 rev. A 07/04
DC
130
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
100
90 Square wave (D = 0.50)
80% Rated V R applied
80
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1
RMS Limit
0.8
DC
0.6
0.4
0.2
see note (2)
70
0
0.4
0.8
1.2
1.6
2
0
2.4
0
Average Forward Current - I F(AV) (A)
0.8
1.2
1.6
2
2.4
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
100
Non-Repetitive Surge Current - I
FSM
(A)
0.4
Average Forward Current - I F(AV) (A)
At Any Rated Load Condition
And With Rated V RRM Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Outline Table
CATHODE
Device Marking: IR1F
1.40 (.055)
1.60 (.062)
AN OD E
1
2.50 (.098)
2.90 (.114)
2
1 P O LA R I TY
4.00 (.157)
2 PA R T N U M B ER
4.60 (.181)
.152 (.006)
.305 (.012)
1.47 MIN.
(.058 MIN.)
2.00 (.078)
2.44 (.096)
.103 (.004)
.203 (.008)
0.76 (.030)
1.52 (.060)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 MAX. )
1.27 MIN.
(.050 MIN.)
5.53 (.218)
SOLDERING PAD
Outline SMA
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1F
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
10
M
Q
040
N
1
2
3
4
5
TR PbF
6
1
-
Current Rating
2
-
M = SMA
3
-
Q = Schottky Q Series
4
-
Voltage Rating (040 = 40V)
5
-
N = New SMA
6
-
y none = Box (1000 pieces)
7
y TR = Tape & Reel (7500 pieces)
7
-
y none = Standard Production
y PbF = Lead-Free
6
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
10MQ040N
********************************************
* This model has been developed by
*
* Wizard SPICE MODEL GENERATOR (1999) *
*
(International Rectifier Corporation)
*
* Contain Proprietary Information
*
********************************************
* SPICE Model Diode is composed by a
*
* simple diode plus paralled VCG2T
*
********************************************
.SUBCKT 10MQ040N ANO CAT
D1 ANO 1 DMOD (0.00472)
*Define diode model
.MODEL DMOD D(IS=1.29526323971343E-04A,N=1.14666404869581,BV=52V,
+ IBV=0.260404749526768A,RS= 0.00048144,CJO=2.04792476092255E-08,
+ VJ=1.82174923822158,XTI=2, EG=0.779470593365538)
********************************************
*Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES(R=1,TC1=-43.3354342653501)
GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-4.190325E-03/-43.33543)*((V(2,CAT)*1E6)/(I(VX)+1E-6)1))+1)*7.842581E-02*ABS(V(ANO,CAT)))-1)}
********************************************
.ENDS 10MQ040N
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
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