SPICE MODEL: 2N7002 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage SOT-23 Low Input Capacitance A Fast Switching Speed Lead Free/RoHS Compliant (Note 2) B Qualified to AEC-Q101 Standards for High Reliability Max 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 C G TOP VIEW S D E G Mechanical Data H Case: SOT-23 K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • • • Min A D Low Input/Output Leakage • • Dim M J L Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • • • • L 0.45 0.61 M 0.085 0.180 α 0° 8° Drain Terminal Connections: See Diagram All Dimensions in mm Marking: K72, K7A, K7B (See Page 2) Gate Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Source Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS ≤ 1.0MΩ VDGR 60 V VGSS ±20 ±40 V ID 115 73 800 mA Pd 300 2.4 mW mW/°C RθJA 417 °C/W Tj, TSTG -55 to +150 °C Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100°C Pulsed Total Power Dissipation (Note 1) Derating above TA = 25°C Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS11303 Rev. 19- 2 1 of 4 www.diodes.com 2N7002 Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 V VGS = 0V, ID = 10µA µA VDS = 60V, VGS = 0V OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C IDSS 1.0 500 IGSS ±10 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 2.5 V VDS = VGS, ID = 250µA RDS (ON) 3.2 4.4 7.5 13.5 Ω VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 A VGS = 10V, VDS = 7.5V gFS 80 mS Input Capacitance Ciss 22 50 pF Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss 2.0 5.0 pF Turn-On Delay Time tD(ON) 7.0 20 ns Turn-Off Delay Time tD(OFF) 11 20 ns Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 25°C @ Tj = 125°C On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω Ordering Information (Note 4) Notes: Device Packaging Shipping 2N7002-7-F SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K7x = Product Type Marking Code, e.g. K72 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K7x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS11303 Rev. 19- 2 2 of 4 www.diodes.com 2N7002 ID, DRAIN-SOURCE CURRENT (A) 1.0 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 0.6 10V Tj = 25°C 6 5 VGS = 5.0V 5.5V 4 5.0V 3 0.4 VGS = 10V 2 0.2 1 2.1V 0 0 0 1 3 2 0 5 4 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 6 3.0 5 2.5 4 ID = 500mA 2.0 ID = 50mA 3 2 1.5 1 VGS = 10V, ID = 200mA 1.0 -55 0 -30 -5 20 70 45 95 120 145 0 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage VDS = 10V 9 350 Pd, POWER DISSIPATION (mW) VGS, GATE SOURCE CURRENT (V) 10 8 7 6 TA = +125°C TA = +75°C 5 4 3 TA = -55°C TA = +25°C 2 300 250 200 150 100 50 1 0 0 0 0.2 0.4 0.6 1 0.8 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics DS11303 Rev. 19- 2 3 of 4 www.diodes.com 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 2N7002 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS11303 Rev. 19- 2 4 of 4 www.diodes.com 2N7002