SPICE MODELS: MMBF170 MMBF170 Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · Low On-Resistance A Low Gate Threshold Voltage SOT-23 D Low Input Capacitance Fast Switching Speed B Low Input/Output Leakage C G TOP VIEW S Lead Free/RoHS Compliant (Note 2) D E G Mechanical Data H · · Case: SOT-23 · · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking: (See Page 2) K6Z K J Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 M L Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 K 0.903 1.10 Terminal Connections: See Diagram L 0.45 0.61 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). M 0.085 0.180 a 0° 8° Drain Gate All Dimensions in mm Ordering & Date Code Information: See Page 2 Source Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol MMBF170 Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 1) Continuous Pulsed ID 500 800 mA Pd 300 1.80 mW mW/°C RqJA 417 K/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30104 Rev. 8 - 2 1 of 4 www.diodes.com MMBF170 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 60 70 ¾ V VGS = 0V, ID = 100mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 1.0 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±15V, VDS = 0V VGS(th) 0.8 2.1 3.0 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ ¾ ¾ 5.0 5.3 W VGS = 10V, ID = 200mA VGS = 4.5V, ID = 50mA gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 40 pF Output Capacitance Coss ¾ 11 30 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Time ton ¾ ¾ 10 ns Turn-Off Time toff ¾ ¾ 10 ns OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Notes: 3. Short duration test pulse used to minimize self-heating effect. Ordering Information Notes: VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50W (Note 4) Device Packaging Shipping MMBF170-7-F SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. K6Z YM Marking Information K6Z = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30104 Rev. 8 - 2 2 of 4 www.diodes.com MMBF170 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 0.6 Tj = 25° C 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 5.5V 5.0V 0.4 0.2 2.1V 0 0 1 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 3 2 6 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 5 4 1.5 VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 5 4 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (° C) Fig. 3 On-Resistance vs Junction Temperature ID = 50mA 3 2 1 0 -55 ID = 500mA 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 5, Max Power Dissipation vs Ambient Temperature DS30104 Rev. 8 - 2 3 of 4 www.diodes.com MMBF170 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30104 Rev. 8 - 2 4 of 4 www.diodes.com MMBF170