SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · Low On-Resistance: RDS(ON) SOT-23 Low Gate Threshold Voltage Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 K 0.903 1.10 Lead Free Plating (Matte Tin Finish annealed L 0.45 0.61 over Alloy 42 leadframe). M 0.085 0.180 Terminal Connections: See Diagram a 0° 8° Low Input Capacitance A Fast Switching Speed D Low Input/Output Leakage B Lead Free/RoHS Compliant (Note 2) G Mechanical Data · · · · · · · · · · TOP VIEW C S D E G H Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 K Moisture sensitivity: Level 1 per J-STD-020C J M L Marking (See Page 2): K7B All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current Continuous ID 240 mA Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30376 Rev. 5 - 2 1 of 4 www.diodes.com 2N7002E ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 ¾ V VGS = 0V, ID = 10mA µA VDS = 60V, VGS = 0V OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C IDSS ¾ ¾ 1.0 500 IGSS ¾ ¾ ±10 nA VGS = ±15V, VDS = 0V VGS(th) 1.0 ¾ 2.5 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ 1.6 2.0 3 4 W VGS = 10V, ID = 250mA VGS = 4.5V, ID = 200mA ID(ON) 0.8 1.0 ¾ A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 50 pF Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ 7.0 20 ns Turn-Off Delay Time tD(OFF) ¾ 11 20 ns Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance @ Tj = 25°C On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Ordering Information Notes: VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W (Note 4) Device Packaging Shipping 2N7002E-7-F SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K7B YM NEW PRODUCT Electrical Characteristics K7B = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September Date Code Key Year 2003 2004 2005 2006 2007 2008 2009 Code P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30376 Rev. 5 - 2 2 of 4 www.diodes.com 2N7002E 0.6 10V TA = -55°C 1.6 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 2.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 5.5V 5.0V 0.4 TA = 25°C 1.2 TA = 125°C 0.8 0.4 0.2 2.1V 0 0 0 1 0 3 2 1 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 2 Drain Current vs. Gate-Source Voltage 5 RDS(ON), DRAIN-SOURCE-ON-RESISTANCE (W) RDS(ON), - DRAIN-SOURCE-ON-RESISTANCE (W) 3 2 5 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 4 3 ID = 250mA 2 ID = 75mA 1 0 5 4 3 VGS = 4.5V 2 VGS = 10V 1 0 0 2 4 6 8 10 0 0.2 VGS - GATE TO SOURCE VOLTAGE (V) Fig. 3 On Resistance vs. Gate to Source Voltage 0.6 0.4 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 4 On Resistance vs. Drain Current 5 PD, POWER DISSIPATION (mW) 350 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) NE W PRODUCT 1.0 3 VGS= 4.5V @ 200mA 2 VGS= 10V @ 250mA 1 300 250 200 150 100 50 0 0 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature DS30376 Rev. 5 - 2 3 of 4 www.diodes.com 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 6, Max Power Dissipation vs Ambient Temperature 2N7002E IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30376 Rev. 5 - 2 4 of 4 www.diodes.com 2N7002E