Schottky Barrier Diodes (SBD) MA2YD26 Silicon epitaxial planar type For high speed switching ■ Features 1 0 to 0.1 5˚ 2.6±0.1 3.5±0.1 • Forward current (Average) I F(AV) = 800 mA rectification is possible • Reverse voltage VR = 60 V is guaranteed • Small reverse current IR • Mini type 2-pin package 2 Symbol Rating Unit VR 60 V VRM 60 V IF(AV) 800 mA IFSM 3 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Maximum peak reverse voltage *1 Non-repetitive peak forward surge current *2 0 to 0.3 Reverse voltage 0.16+0.1 –0.06 5˚ 0 to 0.1 Parameter 0.45±0.1 0.55±0.1 ■ Absolute Maximum Ratings Ta = 25°C Forward current (Average) Unit: mm 0.80±0.05 1.6±0.1 1: Anode 2: Cathode Mini2-F1 Package Marking Symbol: 2Y Note) *1: Mounted on a alumina PC board *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Forward voltage VF IF = 800 mA Reverse current IR VR = 45 V Terminal capacitance Ct VR = 0 V, f = 1 MHz Reverse recovery time * trr IF = IR = 100 mA Irr = 0.1 • IR , RL = 100 Ω Min Typ Max Unit 0.51 0.58 V 100 µA 125 pF 8 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Rated input/output frequency: 250 MHz 4. *: trr measuring instrument Bias Application Unit (N-50BU) Input Pulse tp tr 10% Pulse Generator (PG-10N) Rs = 50 Ω Publication date: March 2003 Wave Form Analyzer (SAS-8130) V R Ri = 50 Ω A SKH00123AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 • IR IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2YD26 IF V F I R VR 104 Ct VR 160 102 Ta = 25°C 102 75°C 25°C 10 Ta = 125°C 10 −20°C 1 10−1 1 Terminal capacitance Ct (pF) Ta = 125°C Reverse current IR (mA) Forward current IF (mA) 103 75°C 10−1 25°C 10−2 120 80 40 10−2 10−3 0 0.4 0.8 Forward voltage VF (V) 2 1.2 10−3 0 0 10 20 30 40 50 60 Reverse voltage VR (V) SKH00123AED 70 0 10 20 30 40 50 60 Reverse voltage VR (V) 70 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL