PANASONIC MA3X715

Schottky Barrier Diodes (SBD)
MA3X715 (MA715)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.40+0.10
–0.05
0.16+0.10
–0.06
0.4±0.2
2
1
(0.65)
• Low forward voltage VF
• Optimum for high frequency rectification because of its short
reverse recovery time trr
5˚
1.50+0.25
–0.05
■ Features
2.8+0.2
–0.3
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
■ Absolute Maximum Ratings Ta = 25°C
Unit
Reverse voltage
Maximum peak reverse voltage
Forward current
VR
30
V
VRM
30
V
IF
30
mA
Single
Double
Peak forward
Single
current
Double
20
IFM
1.1+0.3
–0.1
Rating
1.1+0.2
–0.1
Symbol
0 to 0.1
Parameter
10˚
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
Mini3-G1 Package
EIAJ: SC-59
150
mA
Marking Symbol: M2Y
110
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Internal Connection
3
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
V
VF1
IF = 1 mA
0.3
VF2
IF = 30 mA
1.0
Reverse current
IR
VR = 30 V
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1.5
pF
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
η
VIN = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Forward voltage
Reverse recovery time
*
Detection efficiency
30
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
90%
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: April 2004
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00075CED
1
MA3X715
IF  V F
IR  V R
1
10−1
75°C
102
25°C
10
10−1
0
0.8
1.6
2.4
1 mA
0
IR  T a
20
3V
1V
1
120
Ambient temperature Ta (°C)
200
IF(surge)  tW
f = 1 MHz
Ta = 25°C
0
10
20
Reverse voltage VR (V)
SKH00075CED
120
102
Ta = 25°C
1.0
0
40
Ambient temperature Ta (°C)
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
VR = 30 V
40
0
−40
30
Ct  VR
10
10−1
−40
10
2.0
102
10 mA
0.4
Reverse voltage VR (V)
104
103
0.6
0.2
1
Forward voltage VF (V)
Reverse current IR (µA)
Forward voltage VF (V)
Reverse current IR (µA)
Forward current IF (mA)
25°C
−20°C
10
IF = 30 mA
103
75°C
10−2
2
0.8
Ta = 125°C
Ta = 125°C
102
10−3
VF  Ta
104
103
30
IF(surge)
tW
Non-repetitive
10
1
10 −1
10 −2
10 −1
1
10
Pulse width tW (ms)
102
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP