Schottky Barrier Diodes (SBD) MA3X715 (MA715) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage VF • Optimum for high frequency rectification because of its short reverse recovery time trr 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Reverse voltage Maximum peak reverse voltage Forward current VR 30 V VRM 30 V IF 30 mA Single Double Peak forward Single current Double 20 IFM 1.1+0.3 –0.1 Rating 1.1+0.2 –0.1 Symbol 0 to 0.1 Parameter 10˚ 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package EIAJ: SC-59 150 mA Marking Symbol: M2Y 110 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Internal Connection 3 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit V VF1 IF = 1 mA 0.3 VF2 IF = 30 mA 1.0 Reverse current IR VR = 30 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 pF trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns η VIN = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Forward voltage Reverse recovery time * Detection efficiency 30 µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A 90% VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2004 Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. SKH00075CED 1 MA3X715 IF V F IR V R 1 10−1 75°C 102 25°C 10 10−1 0 0.8 1.6 2.4 1 mA 0 IR T a 20 3V 1V 1 120 Ambient temperature Ta (°C) 200 IF(surge) tW f = 1 MHz Ta = 25°C 0 10 20 Reverse voltage VR (V) SKH00075CED 120 102 Ta = 25°C 1.0 0 40 Ambient temperature Ta (°C) Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) VR = 30 V 40 0 −40 30 Ct VR 10 10−1 −40 10 2.0 102 10 mA 0.4 Reverse voltage VR (V) 104 103 0.6 0.2 1 Forward voltage VF (V) Reverse current IR (µA) Forward voltage VF (V) Reverse current IR (µA) Forward current IF (mA) 25°C −20°C 10 IF = 30 mA 103 75°C 10−2 2 0.8 Ta = 125°C Ta = 125°C 102 10−3 VF Ta 104 103 30 IF(surge) tW Non-repetitive 10 1 10 −1 10 −2 10 −1 1 10 Pulse width tW (ms) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP