MINI CSWA2

Ceramic, Hermetic
SPDT RF Switch
50Ω 500-6000 MHz
Absorptive RF Switch with internal driver.
Single Supply Voltage, +3V to +5V
Product Features
• Wide bandwidth, 500 to 6000 MHz
• High Isolation, 65 dB typ. at 1 GHz
• Low insertion loss, 1.0 dB typ.
• Internal CMOS driver
• Fast switching, Rise/fall time, 30 ns typ.
• Built rugged for tough environments
• Hermetically sealed
• Wide operating temperature, -55°C to 125°C
CSWA2-63DR+
CASE STYLE: DG1293
PRICE: $4.95 ea. QTY. (10-49)
MIL screening available
Please consult Applications Dept.
Typical Applications
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
• Automated switching networks
• Cellular
• PCN
• ISM, WCDMA, WiMAX
• Military
The +Suffix has been added in order to identify RoHS
Compliance. See our web site for RoHS Compliance
methodologies and qualifications.
General Description
The CSWA2-63DR+ is a 50Ω high isolation, absorptive SPDT RF switch designed for wireless applications, covering a broad frequency range from 500 to 6000 MHz with low insertion loss. In non absorptive
mode, the switch is usable down to 0.3 MHz. It may also be used in 75ΩΩ systems over 0.3-3000 MHz.
The CSWA2-63DR+ operates on a single supply voltage in the range of +3V to +5V. This unit includes
an internal CMOS driver. The switch consumes very low supply current, 18 µA typ. The CSWA2-63DR+
switch comes in a low profile hermetic very small size package, 4mm x 4mm x 1.2mm. Expected MTBF
is 373 years at 85°C case temperature.
Schematic and Application Circuit
RF COMMON
Cblock
DUT
RF
Section
Cblock
Cblock
RF1
RF2
Internal CMOS Driver
Control
VDD
Cblock should be free of resonance over frequency of operation.
Frequency
(MHz)
Cblock
(Suggested value)
0.3-500
0.1µF
500-6000
47pF
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RF/IF MICROWAVE COMPONENTS
REV. A
M114160
CSWA2-63DR+
ED-13004
071028
Page 1 of 4
CSWA2-63DR+
SPDT RF Switch
RF Electrical Specifications(1), 500 - 6000 MHz, TAMB=25°C, VDD= +3V to +5V
Parameter
Min.
Frequency Range
Typ.
500
1.0
1.0
1.1
1.2
1.5
60
70
60
54
44
76
64
54
50
44
20
20
15
15
15
13
13
14
14
47
40
50
45
24
24
30
27
0.3 to 500 MHz
500 to 2000 MHz
2000 to 3000 MHz
Insertion Loss
3000 to 4000 MHz
4000 to 6000 MHz
0.3 to 500 MHz
500 to 2000 MHz
Isolation between Common port and RF1/RF2 Ports
2000 to 3000 MHz
3000 to 4000 MHz
4000 to 6000 MHz
54
50
50
40
0.3 to 500 MHz
500 to 2000 MHz
Isolation between RF1 and RF2 ports
2000 to 3000 MHz
3000 to 4000 MHz
4000 to 6000 MHz
52
50
44
36
0.3 to 500 MHz
100 to 2000 MHz
Return Loss (ON STATE)
2000 to 3000 MHz
3000 to 4000 MHz
4000 to 6000 MHz
500 to 2000 MHz
Return Loss @ RF1/RF2 ports (OFF STATE)
2000 to 3000 MHz
3000 to 4000 MHz
4000 to 6000 MHz
VDD=3V, 500 to 2000 MHz
2000 to 6000 MHz
Input IP3
VDD=5V, 500 to 2000 MHz
2000 to 6000 MHz
VDD=3V, 500 to 2000 MHz
Input 1dB Compression (2)
2000 to 6000 MHz
VDD=5V, 500 to 2000 MHz
2000 to 6000 MHz
Max.
Units
6000
MHz
1.3
1.4
1.5
1.8
dB
dB
dB
dB
dB
dBm
dBm
DC Electrical Specifications
Parameter
Min.
VDD, Supply Voltage
Typ.
3
Max.
Supply Current (VDD = 5V)(3)
18
Control Voltage Low
Control Voltage High(4)
Units
5
V
µA
0
0.5
V
2.7
VDD
V
Control Current
5
µA
Notes:
1. Insertion loss values are deembedded from test board loss. Tested using Agilent’s N5230A network analyzer with internal DC blocks,
except for IP3 and compression.
2. Note absolute maximum rating for input and dissipated power. At 5V, over 2000-6000 MHz, 0.2 dB compression.
3. Increases with switching repetition rate. See graph.
4. CMOS interface latch-up condition may occur when logic high signal is applied prior to power supply.
Switching Specifications at VDD=5V
Parameter
Min.
Typ.
Max.
Units
Rise/Fall Time (10 to 90% or 90 to 10% RF)
23
Switching Time (50% CTRL to 90/10% RF)
35
nSec
Video Feedthrough (Control 0-5V, Frequency 1 MHz)
25
mVP-P
®
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nSec
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Page 2 of 4
CSWA2-63DR+
SPDT RF Switch
Absolute Maximum Ratings
Parameter
Ratings
Operating Temperature
-55°C to 125°C
Storage Temperature
-65°C to 150°C
VDD, Supply Voltage
2.7 to 5.5V
Voltage Control
-0.2V Min. VDD Max.
RF input power
1Watt
Dissipated Power at 25°C
370mW
ESD, HBM
Class 1A (250 to <500V) per JESD22-A114
ESD, MM
Class A (passes 50V) per JESD22-A115
ESD, CDM
Class III (500 to <1000V) per JESD22-C101
(State of control voltage selects the desired switch state)
Switch State - RF Common to
RF1
RF2
Low
ON
OFF
High
ON- low insertion loss state
OFF- Isolation State
OFF
ON
RF Out #1/In Port #2
Control
13
CMOS Control IN
VDD
12
Supply Voltage
GND
1,2,3,5,6,7,8,10,
11,14,16, paddle
CONTROL
RF Out #1/In Port #1
9
GND
4
RF2
13
RF1
RF COM
15
14
RF COM
GND
Function
16
Pad Configuration (Top View)
Pad
Number
15
Pad Connections
Description
RF Common/ SUM Port
12
VDD
11
GND
3
10
GND
4
9
RF2
GND
1
GND
2
GND
RF1
7
8
GND
GND
GND
Paddle
6
RF Ground
5
State of Control Voltage
GND
Truth Table
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P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
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RF/IF MICROWAVE COMPONENTS
Page 3 of 4
CSWA2-63DR+
SPDT RF Switch
Product Marking
16
1
MCL
80-63D
+YYWW
Date Code
Additional Detailed Technical Information
Additional information is available on our web site. To access this information enter the model number on
our web site home page.
Performance data, graphs
Case Style: DG1293
Ceramic, finish: gold over nickel
Tape & Reel: F70
Suggested Layout for PCB Design: PL-279
Evaluation Board: TB-461+
Environmental Ratings: ENV40
®
Mini-Circuits
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minicircuits.com
ISO 9001 ISO 14001 CERTIFIED
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com
RF/IF MICROWAVE COMPONENTS
Page 4 of 4