BAT54HT1 Preferred Device Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Features • • • • 30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES Extremely Fast Switching Speed Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc Device Marking: JV Pb−Free Package is Available 1 CATHODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Symbol Value Unit VR 30 V 2 ANODE 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.57 mW/°C RqJA 635 °C/W TJ, Tstg −55 to150 °C 1 SOD−323 CASE 477 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad 1 JV M G JVM G G 2 = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † BAT54HT1 SOD−323 3000/Tape & Reel BAT54HT1G SOD−323 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 3 1 Publication Order Number: BAT54HT1/D BAT54HT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 — — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 7.6 10 pF Reverse Leakage (VR = 25 V) IR — 0.5 2.0 μAdc Forward Voltage (IF = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF — 0.52 0.8 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF — 0.35 0.40 Vdc Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non−Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc Reverse Breakdown Voltage (IR = 10 μA) http://onsemi.com 2 BAT54HT1 820 Ω +10 V 2k 0.1 μF t IF 100 μH tp r 0.1 μF IF t trr 10% t DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 1.0 IR, REVERSE CURRENT (μA) 1000 1 50°C 1 25°C 85°C 25°C 0.1 0.0 0.1 0.2 −40°C 0.3 −55°C 0.4 0.5 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 0.001 0.6 TA = 150°C 100 TA = 25°C 0 VF, FORWARD VOLTAGE (VOLTS) 5 10 12 10 8 6 4 2 0 5 20 Figure 3. Leakage Current 14 0 15 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 25 30 BAT54HT1 PACKAGE DIMENSIONS SOD−323 PLASTIC PACKAGE CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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