MBD54DWT1 Preferred Device Dual Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com 30 VOLTS DUAL HOT−CARRIER DETECTOR AND SWITCHING DIODES Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V @ IF = 10 mAdc • Pb−Free Package is Available Anode 1 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating 6 Cathode N/C 2 Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 150 1.2 mW mW/°C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Storage Temperature Range Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 5 N/C Cathode 3 4 Anode MARKING DIAGRAM 6 SOT−363 CASE 419B−01 STYLE 6 1 BL M 1 M = Date Code ORDERING INFORMATION Package Shipping† MBD54DWT1 SOT−363 3000/Tape & Reel MBD54DWT1G SOT−363 (Pb−Free) 3000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 February, 2005 − Rev. 6 1 Publication Order Number: MBD54DWT1/D MBD54DWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 A) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 Adc Forward Voltage (IF = 0.1 mAdc) VF − 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF − 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF − 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr − − 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF − 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF − 0.35 0.40 Vdc Forward Current (DC) IF − − 200 mAdc Repetitive Peak Forward Current IFRM − − 300 mAdc Non−Repetitive Peak Forward Current (t < 1.0 s) IFSM − − 600 mAdc 820 +10 V 2k 100 H 0.1 F tr IF 0.1 F tp t IF trr 10% t DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) MBD54DWT1 100 1000 IR , REVERSE CURRENT (µA) 150 °C 10 125 °C 1.0 85°C 0.1 0.0 0.1 25°C 0.2 −40 °C 0.4 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 −55 °C 0.3 TA = 25°C 0.5 0.001 0.6 5 0 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 14 C T , TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 25 30 MBD54DWT1 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M STYLE 6: PIN 1. 2. 3. 4. 5. 6. A3 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 ANODE 2 N/C CATHODE 1 ANODE 1 N/C CATHODE 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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