AD 5962-88565022A

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add case outline 2 for device types 01 and 02. Update format. Editorial
changes throughout.
89-11-07
M. A. Frye
B
Changes to large-signal voltage gain test and to the output voltage swing test.
Changes IAW NOR 5962-R193-93.
93-08-26
M. A. Frye
C
Add case outline K. Change boilerplate to add one-part part numbers. Add
delta test limits. Redrawn.
96-11-25
R. Monnin
D
Add radiation hardness requirements. Update boilerplate. -rrp
98-06-19
R. Monnin
E
Change to the slew rate test condition AVCL in table I. -rrp
00-10-04
R. Monnin
F
Add case outline D. Remove radiation exposure circuit. Changes made to
1.2.4, 1.3, 3.2.3, figure 1, and table IIA. Update boilerplate to reflect current
requirements. -rrp
03-03-19
R. Monnin
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
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REV STATUS
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PMIC N/A
PREPARED BY
Gary Zahn
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
CHECKED BY
Ray Monnin
APPROVED BY
Michael A Frye
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, LOW NOISE, QUAD OPERATIONAL
AMPLIFIERS, MONOLITHIC SILICON
DRAWING APPROVAL DATE
88-08-18
REVISION LEVEL
F
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1 OF
5962-88565
11
5962-E298-03
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following examples.
For device classes M and Q:
5962
-
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
88565
01
C
X
Device
type
(see 1.2.2)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
For device class V:
5962
R
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
88565
01
V
C
X
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
Circuit function
OP-470A
OP-471A
Very low noise, quad, operational amplifier
High speed, low noise, quad, operational
amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed
below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q
designators will not be included in the PIN and will not be marked on the device.
Device class
M
Q or V
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
STANDARD
MICROCIRCUIT DRAWING
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A
REVISION LEVEL
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SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
D
2
3
K
Descriptive designator
GDIP1-T14 or CDIP2-T14
GDFP1-F14 or CDFP2-F14
CQCC1-N20
CQCC1-N28
GDFP2-F24 or CDFP3-F24
Terminals
Package style
14
14
20
28
24
Dual-in-line
Flat pack
Square leadless chip carrier
Square leadless chip carrier
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Supply voltage (VCC) .......................................................
Differential input voltage ..................................................
Differential input current ..................................................
Input voltage ....................................................................
Output short circuit duration ............................................
Storage temperature range .............................................
Lead temperature (soldering, 60 seconds) .....................
Power dissipation (PD):
Cases C and 2 .............................................................
Case D .........................................................................
Case 3 .........................................................................
Case K .........................................................................
Maximum junction temperature (TJ) ................................
Thermal resistance, junction-to-case (θJC) ......................
Thermal resistance, junction-to-ambient (θJA):
Cases C and 2 .............................................................
Case D .........................................................................
Case 3 .........................................................................
Case K .........................................................................
±18 V dc
±1 V dc 2/
±25 mA 2/
Supply voltage
Continuous
-65°C to +150°C
+300°C
800 mW
550 mW
500 mW
440 mW
+150°C
See MIL-STD-1835
100°C/W
140°C/W
110°C/W
69°C/W
1.4 Recommended operating conditions.
Ambient operating temperature range (TA) ..................... -55°C to +125°C
Supply voltage (VCC) ....................................................... ±15 V
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)................. 100 Krads(Si) 3/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
1/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ The inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise
performance. If the differential input voltage exceeds ±1 V, the input current should be limited to ±25 mA.
3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method
1019, condition A.
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SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
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REVISION LEVEL
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TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/ 2/
-55°C ≤ TA ≤+125°C
unless otherwise specified
Group A
subgroups
Device
type
1
01
Limits
Min
Input offset voltage
VIO
M,D,P,L,R
Input offset current
IIO
VCM = 0 V
±0.6
1
±0.6
Input bias current
IIB
VCM = 0 V
M,D,P,L,R
Input noise voltage
En
fO = 1 Hz to 100 Hz
TA = +25°C
Large-signal voltage gain
AVS
±1.2
1
±1.0
±10
All
2, 3
±20
1
50
1
±25
All
2, 3
±50
1
±500
7
01
110
02
265
3/
VO = ±10 V,
4
mV
±0.8
02
2, 3
1
M,D,P,L,R
Max
±0.4
2, 3
1
M,D,P,L,R
Unit
01
1000
nA
nA
nV
RMS
V/mV
RL = 10 kΩ
M,D,P,L,R
VO = ±10 V,
RL = 2 kΩ
5, 6
750
4
100
4
500
5, 6
400
3/
VO = ±10 V,
4
02
500
RL = 10 kΩ
M,D,P,L,R
5, 6
375
4
50
See footnotes at end of table.
STANDARD
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TABLE I. Electrical performance characteristics – Continued.
Test
Large-signal voltage gain
Symbol
AVS
Conditions 1/ 2/
-55°C ≤ TA ≤+125°C
unless otherwise specified
Group A
subgroups
Device
type
4
02
VO = ±10 V,
RL = 2 kΩ
Min
350
VOP
RL = 2 kΩ 3/
4, 5, 6
All
Supply current 4/
IS
No load
1, 2, 3
All
M,D,P,L,R
Common-mode rejection
CMR
7
mA
11
01
1.4
02
6.5
01
110
V/µs
3/
VCM = IVR = ±11 V 3/ 5/
1
1
VCC = ±4.5 V to ±18 V 3/
1
02
105
100
01
µV/V
1.8
2, 3
1
dB
100
2, 3
PSRR
V
11
2, 3
Power supply rejection ratio
V/mV
±12
1
AVCL = +21, RL = 10 kΩ,
TA = +25°C
Max
250
Output voltage swing
SR
Unit
3/
5, 6
Slew rate
Limits
5.6
02
5.6
2, 3
10
1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. However, this
device is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in table I.
When performing post irradiation electrical measurements for any RHA level, TA = +25°C. VCC = ±15 V, RS = 50 Ω.
2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method
1019, condition A.
3/ This parameter is not tested post-irradiation.
4/ IS limit equals the total of all amplifiers.
5/ IVR is defined as the VCM range used for the CMR test.
STANDARD
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Device types
Case outlines
01 and 02
C and D
2
Terminal
number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
3
K
Terminal symbol
OUT A
-IN A
+IN A
+VCC
+IN B
-IN B
OUT B
OUT C
-IN C
+IN C
-VCC
+IN D
-IN D
OUT D
---------------------------------------------------------
NC
OUT A
-IN A
+IN A
NC
+VCC
NC
+IN B
-IN B
OUT B
NC
OUT C
-IN C
+IN C
NC
-VCC
NC
+IN D
-IN D
OUT D
---------------------------------
NC
OUT A
-IN A
NC
NC
+IN A
NC
+VCC
NC
+IN B
NC
NC
-IN B
OUT B
NC
OUT C
-IN C
NC
NC
+IN C
NC
-VCC
NC
+IN D
NC
NC
-IN D
OUT D
OUT A
-IN A
NC
NC
+IN A
+VCC
+IN B
NC
NC
NC
-IN B
OUT B
OUT C
-IN C
NC
NC
NC
+IN C
-VCC
+IN D
NC
NC
-IN D
OUT D
-------------
FIGURE 1. Terminal connections.
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3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
STANDARD
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TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Interim electrical
parameters (see 4.2)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M
Device
class Q
Device
class V
1
1
1
Final electrical
parameters (see 4.2)
1,2,3,4,5,6 1/
1,2,3,4,5,6 1/
1,2,3,4, 1/ 2/
5,6
Group A test
requirements (see 4.4)
1,2,3,4,5,6,7
1,2,3,4,5,6,7
1,2,3,4,5,6,7
Group C end-point electrical
parameters (see 4.4)
1
1
1 2/
Group D end-point electrical
parameters (see 4.4)
1
1
1
Group E end-point electrical
parameters (see 4.4)
----
----
1, 4
1/ PDA applies to subgroup 1.
2/ See table IIB for delta measurement parameters.
Table IIB. 240 hour burn-in and group C end-point electrical parameters.
Parameter
Device type
Limit
Min
VOS
IOS
IB
Delta
Max
Min
Max
01
0.4 mV
100 µV
02
0.8 mV
250 µV
01
10 nA
5 nA
02
10 nA
5 nA
01
±25 nA
5 nA
02
±25 nA
5 nA
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device
class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for
device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
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4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005 of MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535. End-point
electrical parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 condition A and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the
pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate burnout. When required by the customer test shall be performed on devices, SEC, or approved test
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-88565
A
REVISION LEVEL
F
SHEET
10
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-88565
A
REVISION LEVEL
F
SHEET
11
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 03-03-19
Approved sources of supply for SMD 5962-88565 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-8856501CA
24355
OP-470AY/883C
5962-88565012A
24355
OP-470ARC/883C
5962-88565013A
3/
OP-470ATC/883C
5962-8856502CA
24355
OP-471AY/883C
5962-88565022A
24355
OP-471ARC/883C
5962-88565023A
24355
OP-471ATC/883C
5962-8856501VCA
24355
OP470AY/QMLV
5962-8856501V2A
24355
OP470ARC/QMLV
5962-8856501VKA
24355
OP470AN/QMLV
5962-8856502VCA
24355
OP471AY/QMLV
5962-8856502VDA
24355
OP471AM/QMLV
5962-8856502V2A
24355
OP471ARC/QMLV
5962-8856502VKA
24355
OP471AN/QMLV
See footnotes at end of table.
Page 1 of 2
STANDARD MICROCIRCUIT DRAWING BULLETIN – Continued.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R8856501VCA
24355
OP470AY/QMLR
5962R8856501V2A
24355
OP470ARC/QMLR
5962R8856501VKA
24355
OP470AN/QMLR
5962R8856502VCA
24355
OP471AY/QMLR
5962R8856502VDA
24355
OP471AM/QMLR
5962R8856502V2A
24355
OP471ARC/QMLR
5962R8856502VKA
24355
OP471AN/QMLR
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
Vendor name
and address
24355
Analog Devices
RT 1 Industrial Park
PO Box 9106
Norwood, MA 02062
Point of contact: 1500 Space Park Drive
PO Box 58020
Santa Clara, CA 95052-8020
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
Page 2 of 2