ZTX560 E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES • Excellent hFE characterisristics up to IC=50mA • Low Saturation voltages PARTMARKING ZTX 560 PIN-OUT E-LINE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-base voltage V CBO -500 V Collector-emitter voltage V CEO -500 V Emitter-base voltage V EBO -5 V Peak pulse current I CM -500 mA Continuous collector current IC -150 mA Power dissipation P tot 1 W Operating and storage temperature range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS Collector-base breakdown boltage V (BR)CBO -500 V I C =-100µA Collector-emitter breakdown voltage V BR(CEO) -500 V I C =-10mA* Emitter-base breakdown voltage V (BR)EBO -5 V I E =-100µA Collector cut-off current I CBO ; I CES -100 nA V CB =-500V; V CE =-500V Emitter cut-off current I EBO -100 nA V EB =-5V Collector-emitter saturation voltage V CE(sat) -0.2 -0.5 V V I C =-20mA, I C =-50mA, Base-emitter saturation voltage V BE(sat) -0.9 V I C =-50mA, I B =-10mA* Base-emitter turn on voltage V BE(on) -0.9 V I =-50mA, V CE =-10V* C Static forward current transfer ratio h FE 100 80 15 typ Transition frequency fT 60 Output capacitance C obo Switching times t on t off 300 300 8 110 typ. 1.5 typ. I B =-2mA* I B =-10mA* I C =-1mA, V CE =-10V I C =-50mA, V CE =-10V* I C =-100mA, V CE =-10V* MHz V CE =-20V, I C =-10mA, f=50MHz pF V CB =-20V, f=1MHz ns s V CE =-100V, I C =-50mA, I B1 =-5mA, I B2 =10mA * Measured under pulsed conditions. Pulse width=300s. Duty cycle ⱕ2% ISSUE 2 - SEPTEMBER 2006 1 SEMICONDUCTORS ZTX560 TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 SEMICONDUCTORS 2 ZTX560 PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 0.41 0.495 0.016 0.0195 B 0.41 0.495 0.016 0.0195 C 3.61 4.01 0.142 0.158 D 4.37 4.77 0.172 0.188 E 2.16 2.41 0.085 0.095 F — 2.50 — 0.098 G L 1.27 NOM 13.00 13.97 0.050 NOM 0.512 0.550 © Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - SEPTEMBER 2006 3 SEMICONDUCTORS