FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V(BR)CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium power NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA APPLICATIONS • Low power motor driving circuits ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL 7” 8mm 3,000 FMMTA0 6 TA PINOUT DEVICE MARKING • 1G TOP VIEW ISSUE 2 - MAY 2004 1 SEMICONDUCTORS FMMTA06 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage V CBO 80 Collector-emitter voltage V CEO 80 V Emitter-base voltage V EBO 4 V Peak pulse current I CM 1 A mA Continuous collector current IC 500 Base current IB 100 mA Power dissipation @ T A = 2 5 ° C Linear derating factor PD 330 mW 2.64 mW/° C Operating and storage temperature T j; T stg -55 to + 150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient R⍜ JA VALUE UNIT 379 ° C/W ISSUE 2 - MAY 2004 SEMICONDUCTORS 2 FMMTA06 CHARACTERISTICS ISSUE 2 - MAY 2004 3 SEMICONDUCTORS FMMTA06 ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated) PARAMETER SYMBOL MIN. Collector-base breakdown voltage V (BR)CBO 80 Collector-emitter breakdown voltage V (BR)CEO 80 V I C = 1 0 mA* Emitter-base breakdown voltage V (BR)EBO 4 V I E= 1 0 0 A Collector-emitter cut-off current I CES 100 nA V CES = 6 0 V 100 nA Collector-base cut-off current I CBO Static forward current transfer ratio H FE Collector-emitter saturation voltage V CE(sat) 50 TYP. MAX. UNIT CONDITIONS V 120 Base-emitter turn-on voltage V BE(on) fT 100 V CB= 8 0 V I C = 1 0 mA, V CE= 1 V * I C = 1 0 0 mA, V CE= 1 V * 50 Transition frequency I C = 1 mA 0.25 V 1.2 V IC = 1 0 0 mA, IB= 1 0 mA* I C = 0 . 1 A, V CE= 1 V * I C = 1 0 mA, V CE= 2 V , f= 1 0 0 MHz NOTES * Measured under pulsed conditions. Pulse width= 300S. Duty cycle ⱕ2% ISSUE 2 - MAY 2004 SEMICONDUCTORS 4 FMMTA06 TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2004 5 SEMICONDUCTORS FMMTA06 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS A B C Millimeters Min Max 2.67 3.05 1.20 1.40 1.10 ᎏ Inches Min Max 0.105 0.120 0.047 0.055 0.043 ᎏ D F G 0.37 0.53 0.085 0.15 1.90 NOM 0.015 0.021 0.0034 0.0059 0.075 NOM DIM H K L Millimeters Min Max 0.33 0.51 0.01 0.10 2.10 2.50 Inches Max Max 0.013 0.020 0.0004 0.004 0.083 0.0985 M N 0.45 0.64 0.95 NOM 0.018 0.025 0.0375 NOM ᎏ ᎏ ᎏ DIM ©Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquaters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - MAY 2004 SEMICONDUCTORS 6