SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT751 ISSUE 1 - AUGUST 1997 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T751 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -80 V Collector-Emitter Voltage V CEO -60 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -6 A Continuous Collector Current IC Operating and Storage Temperature Range T j:T stg -2 A -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at T amb = 25°C* Any single die “on” Both die “on” equally P tot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.25 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ZDT751 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. -80 V I C=-100µA, I E=0 V (BR)CEO -60 V I C=-10mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100µA, I C=0 Collector Cutoff Current I CBO -0.1 -10 µA µA V CB=-60V V CB=-60V, T amb =100°C Emitter Cutoff Current I EBO -0.1 µA V EB=-4V, I E=0 Collector-Emitter Saturation Voltage V CE(sat) -0.15 -0.28 -0.3 -0.5 V V I C=1A, I B=-100mA* I C=2A, I B=-200mA* Base-Emitter Saturation Voltage V BE(sat) -0.9 -1.25 V I C=1A, I B=-100mA* Base-Emitter Turn-On Voltage V BE(on) -0.8 -1 V I C =-1A, V CE=-2V* Static Forward Current h FE Transfer Ratio 70 100 80 40 200 200 170 80 Transition Frequency fT 100 140 Output Capacitance C obo Switching Times t on t off MAX. I C=-50mA, V CE=-2V* I C=-500mA, V CE=-2V* I C=-1A, V CE=-2V* I C=-2A, V CE=-2V* 300 MHz I C=-100mA, V CE=-5V f=100MHz pF V CB=-10V f=1MHz 40 ns I C=-500mA, V CC=-10V I B1=I B2=-50mA 450 ns 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZDT751 TYPICAL CHARACTERISTICS 0.6 td tr tf ns 140 0.4 IC/IB=10 Switching time VCE(sat) - (Volts) 0.5 0.3 0.2 0.1 0 0.0001 0.001 0.01 0.1 1 10 IB1=IB2=IC/10 ts ns 700 120 600 100 500 80 400 60 300 40 200 20 100 0 0 ts td tf tr 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 225 VBE(sat) - (Volts) 1.2 hFE - Gain 175 VCE=2V 125 75 0.01 0.1 1 10 0.8 0.0001 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.2 VBE - (Volts) IC/IB=10 0.6 0 1.0 VCE=2V 0.8 0.6 0.4 1.0 0.0001 0.001 0.01 0.1 IC - Collector Current (Amps) VBE(on) v IC 1 10 10