BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 — 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features n Very low on-state resistance n 175 °C rated n Q101 compliant n Logic level compatible 1.3 Applications n Automotive systems n Motors, lamps and solenoids n General purpose power switching n 12 V loads 1.4 Quick reference data n EDS(AL)S ≤ 112 mJ n ID ≤ 59 A n RDSon = 9.3 mΩ (typ) n Ptot ≤ 75 W 2. Pinning information Table 1. Pin Pinning Description Simplified outline Symbol mb D 1, 2, 3 source (S) 4 gate (G) mb mounting base; connected to drain (D) G 1 2 3 4 SOT669 (LFPAK) mbl798 S1 S2 S3 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number BUK9Y11-30B Package Name Description Version LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage VDGR drain-gate voltage (DC) VGS gate-source voltage ID drain current Conditions RGS = 20 kΩ Min Max Unit - 30 V - 30 V - ±15 V Tmb = 25 °C; VGS = 5 V; see Figure 2 and 3 - 59 A Tmb = 100 °C; VGS = 5 V; see Figure 2 - 42 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 239 A Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 75 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IDR reverse drain current Tmb = 25 °C - 59 A IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 239 A unclamped inductive load; ID = 59 A; VDS ≤ 30 V; VGS = 5 V; RGS = 50 Ω; starting at Tj = 25 °C - 112 mJ - [1] - Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy [1] Conditions: a) Maximum value not quoted. Repetitive rating defined in Figure 16. b) Single-pulse avalanche rating limited by Tj(max) of 175 °C. c) Repetitive avalanche rating limited by an average junction temperature of 170 °C. d) Refer to application note AN10273 for further information. BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 2 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab844 120 003aaa846 60 ID (A) Pder (%) 80 40 40 20 0 0 0 50 100 150 200 0 50 100 150 Tmb (°C) 200 VGS ≥ 5 V P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Continuous drain current as a function of mounting base temperature 003aaa847 103 ID (A) Tmb (°C) Limit RDSon = VDS / ID tp = 10 µs 2 10 100 µs 10 1 ms 10 ms DC 100 ms 1 10-1 10-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 3 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-mb) thermal resistance from junction to mounting base - Conditions Min Typ Max Unit - - 2 K/W 003aaa848 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 δ= P 0.02 t tp single shot tp T T -2 10 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 4 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V gate-source threshold voltage drain leakage current ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C 1.1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V VDS = 30 V; VGS = 0 V Tj = 25 °C - 0.02 1 µA Tj = 175 °C - - 500 µA - 2 100 nA VGS = ±15 V; VDS = 0 V IGSS gate leakage current RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; see Figure 6 and 8 Tj = 25 °C - 9.3 11 mΩ Tj = 175 °C - - 21 mΩ VGS = 4.5 V; ID = 25 A - - 12 mΩ VGS = 10 V; ID = 25 A - 8.1 9 mΩ ID = 25 A; VDS = 24 V; VGS = 5 V; see Figure 14 - 16.5 - nC - 3.3 - nC - 5.4 - nC - 1211 1614 pF - 341 409 pF - 160 220 pF - 14 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 33 - ns td(off) turn-off delay time - 62 - ns tf fall time - 42 - ns VDS = 25 V; RL = 2.5 Ω; VGS = 5 V; RG = 10 Ω Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; see Figure 15 - 0.85 1.2 V trr reverse recovery time - 47 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; VR = 30 V - 20 - nC BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 5 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab405 160 15 ID (A) 10 003aab407 12 5 RDSon (mΩ) 120 10 4 3.8 3.6 3.4 3.2 3 80 8 2.8 40 6 2.6 2.4 VGS (V) = 2.2 0 0 2 4 6 8 4 10 VDS (V) 3 9 12 15 VGS (V) Tj = 25 °C Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aab406 30 VGS (V) = 3 RDSon (mΩ) 6 003aab851 2 a 3.2 3.4 3.6 3.8 4 1.5 5 20 1 10 10 0.5 0 0 40 80 120 160 ID (A) 0 −60 60 120 180 Tj (°C) Tj = 25 °C R DSon a = ----------------------------R DSon ( 25°C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature BUK9Y11-30B_1 Product data sheet 0 © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 6 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab986 2.5 003aab987 10−1 ID (A) VGS(th) (V) 2.0 10−2 max min 1.5 typ min 1.0 typ max 10−3 10−4 10−5 0.5 10−6 0.0 −60 0 60 120 180 0 1 2 Tj (°C) 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 003aab409 60 Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aab402 2500 C (pF) gfs (S) 2000 50 Ciss 1500 Coss 1000 40 Crss 500 30 5 10 15 20 25 30 0 10−1 1 Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK9Y11-30B_1 Product data sheet 102 10 VDS (V) ID (A) © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 7 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 003aab408 50 003aab404 5 VGS (V) ID (A) 4 40 VDS = 14 V VDS = 24 V 30 3 20 2 Tj = 175 °C 10 1 Tj = 25 °C 0 0 0 1 2 0 3 5 10 15 20 QG (nC) VGS (V) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aab403 50 Fig 14. Gate-source voltage as a function of gate charge; typical values 003aaa850 102 IS (S) 40 (1) IAL (A) 30 (2) 10 Tj = 175 °C 20 Tj = 25 °C 10 0 0.0 (3) 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V 1 10−3 10−2 10−1 1 10 tAL (ms) See Table note 1 of Table 3 Limiting values. (1) Single-pulse; Tj = 25 °C. (2) Single-pulse; Tj = 150 °C. (3) Repetitive. Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Fig 16. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 8 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16 MO-235 Fig 17. Package outline SOT669 (LFPAK) BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 9 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK9Y11-30B_1 20070830 Product data sheet - - BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 10 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BUK9Y11-30B_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 30 August 2007 11 of 12 BUK9Y11-30B NXP Semiconductors N-channel TrenchMOS logic level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 August 2007 Document identifier: BUK9Y11-30B_1