Preliminary KA5Q1265RT S P S S P S TO -22 0F -5L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turnoff driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in QuasiResonant Converter as C-TV power supply. 1. Drain 2. GND 3. VCC 4. FB 5. Sync ORDERING INFORMATION FEATURES • Quasi Resonant Converter Controller • Internal Burst mode Controller for Stand-by mode • Pulse by pulse current limiting • Over current Latch protection • Over voltage protection (Vsync: Min. 11V) • Internal thermal shutdown function • Under voltage lockout • Internal high voltage sense FET • Auto-restart mode Device Package Topr (°°C) KA5Q1265RT TO-220F-5L −25°C to +85°C BLOCK DIAGRAM 3 + – Sync. REF. 5 – Internal Bias Burst mode controller PSR REF. OSC S + 1 – Vref + UVLO _ Q Ron R OVP Roff LEB 4 1.7R Ifb – R PWM + Vfb offset Ids Vz Rsense + Vds REF. – S TSD 150oC Power-on Reset Q R Delay 500nS + – OCL REF. 2 REV. B 1999 Fairchild Semiconductor Corporation Preliminary KA5Q1265RT S P S ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Drain-source (GND) voltage (1) VDSS 650 V Drain-Gate voltage (RGS=1MΩ) VDGR 650 V Gate-source (GND) voltage VGS ±30 V IDM 48 ADC EAS 785 mJ IAS − A Continuous drain current (TC=25°C) ID 12 ADC Continuous drain current (TC=100°C) ID 8.4 ADC Supply voltage VCC 40 V Analog input voltage range (F/B pin) VFB −0.3 to VSD V Analog input voltage range (Sync pin) VSYNC −0.3 to 13 V Total power dissipation PD (wt H/S) 135 W Derating 1.1 W/°C Drain current pulsed (2) Single pulsed avalanche energy (3) Avalanche current (4) Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C NOTES: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C Preliminary KA5Q1265RT S P S ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit 650 − − V Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 200 µA VDS=0.8*Max., Rating, VGS=0V, TC=125°C − − 500 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=6.0A − 0.72 − Ω Forward transconductance (note) gfs VDS=15V, ID=6.0A 5.7 − − S Input capacitance Ciss − 2700 − pF Output capacitance Coss VGS=0V, VDS=25V, f=1MHz − 300 − Reverse transfer capacitance Crss − 61 − Turn on delay time td(on) − 18 − Rise time tr − 37 − Turn off delay time td(off) − 88 − Fall time tf − 36 − Total gate charge (gate-source+gate-drain) Qg − − 140 Gate-source charge Qgs − 20 − Gate-drain (Miller) charge Qgd − 69 − NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% VDD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) nS nC Preliminary KA5Q1265RT S P S ELECTRICAL CHARACTERISTICS (Control part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit Ta=25°C 18 20 22 KHz -25°C<Ta<+85°C − ±5 ±10 % 92 95 98 % OSCILLATOR SECTION Initial accuracy FOSC Frequency change with temperature − (2) PWM SECTION Maximum duty cycle − DMAX FEEDBACK SECTION Feedback Source Current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Shutdown Delay Current IDELAY Ta=25°C, 5V<Vfb<VSD 4 5 6 µA 5.28 6.00 6.72 A 14 15 16 V OVER CURRENT PROTECTION SECTION Over Current Protection IL(MAX) Max. inductor current UVLO SECTION − Start threshold voltage IST Minimum oeration voltage IOPR After turn on 8 9 10 V Start threshold voltage Vth(H) VCC=14 − 0.1 0.2 mA Operating supply current (Control part only) Vth(L) VCC<28 − 10 18 mA VSD Vfb>6.5V 6.9 7.5 8.1 V 140 − − °C 11 12 13 V 0.9 1.0 1.1 V TOTAL STANDBY CURRENT SECTION SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) (1) Over Voltage Protection Voltage VOVP (1) VOCL Over Current latch Protection − TSD Vsync>11V − BURST MODE SECTION Burst mode Threshold Voltage VBURST Vfb=0V 10.6 11.0 11.4 V Burst mode Hysteresis Voltage VBURSTH Vfb=0V 0.7 1 1.2 V Burst mode Enable Feedback voltage VBURST_EN VCC=11V 0.7 1.0 1.3 V Burst mode Current Limit IBURST VCC=11.5V 0.7 0.85 1.0 V Preliminary KA5Q1265RT S P S ELECTRICAL CHARACTERISTICS (Continued) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit SYNCHORONIZATION SECTION Burst Sync Threshold Voltage VBSY VFB=0V 3.1 3.5 3.9 V Burst Sync Hysteresis Voltage VBSYH VFB=0V 2.0 2.25 2.5 V Normal Sync Threshold Voltage VNSY VFB=5V 4.0 4.5 5.0 V Normal Sync Hysteresis Voltage VNSYH VFB=5V 1.8 2.0 2.2 V IFB=0 32.0 32.3 32.6 V − 2.6 − mA/V PRIMARY SIDE REGULATION SECTION Primary Reg. Threshold Voltage VPR Primary Reg. Transconductance GPR − NOTE: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guranteed, are tested in EDS (wafer test) process KA5Q1265RT LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 12/28/99 0.0m 001 Stock#DSxxxxxxxx 1999 Fairchild Semiconductor Corporation