SKYWORKS AF002C4-39

DATA SHEET
AF002C1-39, AF002C1-39LF, AF002C4-39, AF002C4-39LF:
GaAs IC Control FET Series 300 kHz–2.5 GHz
Pin Out
Features
●
Drain (D)
Source (S)
●
2
1
Low-cost SOT-23 package
Series or shunt configuration
● Low DC current drain
● Ideal switch building blocks
● Pin diode replacements
● High-power antenna switches
● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 250 °C
per JEDEC J-STD-020
3
Gate (G)
Description
This group of GaAs control FETs can be used in both series and
shunt configurations. They incorporate on-chip circuitry that
eliminates the need for extra bias components and minimizes
power drain to typically 25 µW. These features make the devices
ideal replacements for PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due to
package parasitics. They can be tuned out in narrow band applications as shown in the circuit examples on the following pages.
NEW
Skyworks offers lead (Pb)-free, RoHS (Restriction of
Hazardous Substances)-compliant packaging.
Electrical Specifications at 25 °C (0, -5 V)
Part Number(1)
AF002C1-39
AF002C4-39
Ω)(2)
RON (Ω
Frequency
Insertion Loss (dB)(3, 4)
COFF (pF)(5)
Isolation (dB)(4)
P-1 dB (W)
(GHz)
Typ.
Max.
Series
Shunt
Typ.
Max.
Series
Shunt
Typ.
300 kHz–0.5 GHz
6.4
9
0.5
0.1
0.13
0.25
25
12
0.5
300 kHz–1.0 GHz
6.4
9
0.6
0.15
0.13
0.25
17
8
1
300 kHz–2.5 GHz
6.4
9
0.7
0.2
0.13
0.25
13
3
1
300 kHz–0.5 GHz
0.8
1.1
0.2
0.15
1.1
1.5
11
15
6
300 kHz–1.0 GHz
0.8
1.1
0.25
0.25
1.1
1.5
6
9
7
300 kHz–2.5 GHz
0.8
1.1
0.3
2
1.1
1.5
3
4
7
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. RON - resistance in Ω in low impedance state when “0” V is applied to gate (G).
3. Insertion loss changes by 0.003 dB/°C.
4. Insertion loss and isolation typical values.
5. COFF - capacitance (pF) in high impedance state when -5 V is applied to gate (G).
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200166 Rev. C • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • June 8, 2006
1
DATA SHEET • AF002C1-39, AF002C4-39
Operating Characteristics at 25 °C (0, -5 V)
Parameter
Condition
Switching characteristics
Rise, fall
On, off
Frequency
Min.
Typ.
10/90% or 90/10% RF
50% CTL to 90/10% RF
Thermal resistance
Control voltages
Max.
Unit
6
12
ns
ns
25
°C/W
VLOW = 0 to -0.2 V @ 20 µA max.
VHIGH = -5 V @ 50 µA to -9 V @ 200 µA max.
Typical Performance Data (0, -5 V)
50
0.8
45
0.7
35
C1
Isolation (dB)
Insertion Loss (dB)
40
0.6
0.5
0.4
0.3
0.2
25
20
15
C1
10
C4
0.1
C4
5
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Frequency (GHz)
Insertion Loss vs. Frequency
Series Configuration
Isolation vs. Frequency
Series Configuration
0.7
25
Isolation (dB)
0.6
0.5
0.4
0.3
C4
20
C4
15
10
C1
0.2
5
0.1
C1
0
0
0.5
1
1.5
2
2.5
0
3
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Frequency (GHz)
Insertion Loss vs. Frequency
Shunt Configuration
Isolation vs. Frequency
Shunt Configuration
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
2
3
30
0.8
Insertion Loss (dB)
30
June 8, 2006 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200166 Rev. C
3
DATA SHEET • AF002C1-39, AF002C4-39
Absolute Maximum Ratings
AF002C1-39
AF002C4-39
Characteristic
Characteristic
Value
RF input power
2 W > 500 MHz 0/-8 V
0.5 W @ 50 MHz 0/-8 V
Control voltage
+0.2 V, -10 V
Operating temperature
-40 °C to +85 °C
Storage temperature
-65 °C to +150 °C
Value
RF input power
8 W > 450 MHz, 0/-12 V
Control voltage
+0.2, -12 V
Operating temperature
-40 °C to +85 °C
Storage temperature
-65 °C to +150 °C
Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty.
CAUTION: Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This
device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the
human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at
all times.
T/R and Antenna Changeover Switch for Mobile Cellular Systems
Mobile
Antenna
Phone
Antenna
Diplexer
LNAPA
Changeover
Switch
T/R Switch
From Transmitter
To Receiver
Disconnect
T/R Switch
System Block Diagram
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200166 Rev. C • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • June 8, 2006
3
DATA SHEET • AF002C1-39, AF002C4-39
T/R Switch Schematic
Changeover Switch Schematic
Antenna
Antenna
LT (nH)
D
S
λ/4
Tx
CT
Rx
D
S
10 kΩ
GaAs FET
AF002C
Series
G
C (pF)
G
D
G
VCTL
S
VCTL
GaAs FET
AF002C
Series
Truth Table for T/R Switch
VCTL (V)
To T/R Switch
Truth Table for Changeover Switch
Tx to Antenna
Rx to Antenna
VCTL (V)
Antenna
0
Low loss
High isolation
-5
Connected
-5
High isolation
Low loss
0
Isolated
See next page for positive voltage operation.
See next page for positive voltage operation.
Component Values for T/R Switch Circuit
Part Number
LT (nH)
CT (pF)
Freq. (GHz)
AF002C1-39
165
18.8
0.45
AF002C4-39
85
18.8
0.45
AF002C1-39
44
4.7
0.9
AF002C4-39
22
4.7
0.9
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
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June 8, 2006 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200166 Rev. C
DATA SHEET • AF002C1-39, AF002C4-39
Truth Table
Positive Voltage Operation
Negative Voltage Operation
S
VS
RF
D
G
RF Path
-5
Insertion loss
0
Isolation
0
Insertion loss
-5
Isolation
RF
10 kΩ
Shunt
GND
RF
CT
D
2
1
S
Series
RF
RF
3
Positive Voltage Operation
S
D
G
RF Path
0
Insertion loss
VHIGH
Isolation
G (0, VHIGH)
Shunt
GND
RF
Shunt Configuration
VS
10 kΩ
Series
RF
0
RF
Isolation
VHIGH
Insertion loss
RF
LT
CBL
CBL
D
2
1
RF
S
VHIGH = +5 to +9 V (VS = VHIGH ± 0.2 V).
SOT-23
0.120 (3.05 mm)
0.110 (2.79 mm)
0.055 (1.40 mm)
0.047 (1.19 mm)
0.024 (0.61 mm)
0.018 (0.45 mm)
3
0.018 (0.45 mm)
0.015 (0.38 mm)
3
G (0, Vhigh)
0.104 (2.64 mm)
0.083 (2.10 mm)
1
CBL - Chose value for lowest impedance at desired operating frequency.
Series Configuration
2
0.040 (1.02 mm)
0.037 (0.94 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
Recommended Solder Reflow Profiles
Refer to the “Recommended Solder Reflow Profile”
Application Note.
0.007 (0.18 mm)
0.003 (0.08 mm)
0.027 (0.69 mm) Ref.
0.004 (0.10 mm)
0.0005 (0.01 mm)
0.045
(1.14 mm)
0.035
(0.89 mm)
Tape and Reel Information
Refer to the “Discrete Devices and IC Switch/Attenuators
Tape and Reel Package Orientation” Application Note.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200166 Rev. C • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • June 8, 2006
5
DATA SHEET • AF002C1-39, AF002C4-39
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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
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June 8, 2006 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200166 Rev. C