BYV34-600 Dual rectifier diode ultrafast Rev. 01 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features n Fast switching n Soft recovery characteristic n Low switching loss n Low thermal resistance n Low forward voltage drop n High thermal cycling performance 1.3 Applications n Output rectifiers in high frequency switched-mode power supplies n Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 1.4 Quick reference data n VRRM ≤ 600 V n VF ≤ 1.16 V n IO(AV) ≤ 20 A n trr ≤ 60 ns 2. Pinning information Table 1. Pinning Pin Description 1 anode 1 2 cathode 3 anode 2 mb mounting base; cathode Simplified outline Symbol mb 1 3 2 sym084 1 2 3 SOT78 (3-lead TO-220AB) BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 3. Ordering information Table 2. Ordering information Type number BYV34-600 Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage square waveform; δ = 1.0; Tmb ≤ 138 °C - 600 V IO(AV) average output current square waveform; δ = 0.5; Tmb ≤ 107 °C; both diodes conducting - 20 A IFRM repetitive peak forward current t = 25 µs; square waveform; δ = 0.5; Tmb ≤ 107 °C; per diode - 20 A IFSM non-repetitive peak forward current t = 10 ms; sinusoidal waveform; per diode - 120 A t = 8.3 ms; sinusoidal waveform; per diode - 132 A Tstg storage temperature −40 +150 °C Tj junction temperature - 150 °C 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; per diode; see Figure 1 - - 2.4 K/W with heatsink compound; both diodes conducting - - 1.6 K/W - 60 - K/W Rth(j-a) thermal resistance from junction to ambient in free air BYV34-600_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 4 October 2007 2 of 9 BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 001aag912 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp T 10−3 10−6 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 1. Transient thermal impedance from junction to mounting base per diode as a function of pulse width 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IF = 10 A; Tj = 150 °C; see Figure 2 - 0.92 1.16 V IF = 20 A; see Figure 2 - 1.07 1.48 V Static characteristics VF IR forward voltage reverse current VR = 600 V - 10 50 µA VR = 600 V; Tj = 100 °C - 0.2 0.6 mA Dynamic characteristics Qr recovered charge IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs; see Figure 3 - 40 70 nC trr reverse recovery time IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs; see Figure 3 - 50 60 ns IRM peak reverse recovery current IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100 °C; see Figure 3 - 3 5 A VFR forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs; see Figure 4 - 3.2 - V BYV34-600_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 4 October 2007 3 of 9 BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 003aab485 30 IF (A) 25 20 15 10 (1) (2) (3) 5 0 0 0.4 0.8 1.2 VF (V) 1.6 (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 2. Forward current as a function of forward voltage IF IF dlF dt trr time time VF 10 % Qr VFR 100 % VF IR IRM time 001aab911 001aab912 Fig 3. Reverse recovery definitions Fig 4. Forward recovery definitions BYV34-600_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 4 October 2007 4 of 9 BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 003aab483 18 Ptot (W) 15 δ=1 003aab484 12 Ptot (W) 10 a = 1.57 1.9 2.2 0.5 12 2.8 8 0.2 4.0 9 6 0.1 6 4 3 2 0 0 0 5 10 IF(AV) (A) 15 IF(AV) = IF(RMS) × √δ 0 6 IF(AV) (A) 9 a = form factor = IF(RMS) / IF(AV) Fig 5. Forward power dissipation as a function of average forward current; square waveform; maximum values Fig 6. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYV34-600_1 Product data sheet 3 © NXP B.V. 2007. All rights reserved. Rev. 01 — 4 October 2007 5 of 9 BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 L2 max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.45 1.00 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 05-03-22 05-10-25 Fig 7. Package outline SOT78 (3-lead TO-220AB) BYV34-600_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 4 October 2007 6 of 9 BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BYV34-600_1 20071004 Product data sheet - - BYV34-600_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 4 October 2007 7 of 9 BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BYV34-600_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 4 October 2007 8 of 9 BYV34-600 NXP Semiconductors Dual rectifier diode ultrafast 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 1 2 2 2 3 6 7 8 8 8 8 8 8 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 October 2007 Document identifier: BYV34-600_1