MOTOROLA MMBZ5V6ALT1_07

MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
% $ #
!
!"# # $
! !##
ADDITIONAL VOLTAGES AVAILABLE
!""!
Motorola Preferred Device
This dual monolithic silicon zener diode is designed for applications requiring transient
overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical
equipment and other applications. Its dual junction common anode design protects two
separate lines using only one package. These devices are ideal for situations where
board space is at a premium.
SOT-23 DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5.6 VOLTS
24 WATTS PEAK POWER
3
Specification Features:
• SOT-23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Peak Power — 24 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 µA
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
1
2
Mechanical Characteristics:
• Void Free, Transfer-Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• Available in 8 mm Tape and Reel
Use the Device Number to Order the 7 inch/3,000 Unit Reel
Replace “T1” with “T3” in the Device Number to Order the 13 inch/10,000 Unit Reel
CASE 318-07
STYLE 12
LOW PROFILE SOT-23
PLASTIC
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seremban, Malaysia
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
@ TA ≤ 25°C
Ppk
24
Watts
Total Power Dissipation on FR-5 Board (2) @ TA = 25°C
Derate above 25°C
°PD°
°225
1.8
°mW°
mW/°C
Thermal Resistance Junction to Ambient
RθJA
556
°C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C
Derate above 25°C
°PD°
°300
2.4
°mW
mW/°C
Thermal Resistance Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature Range
TJ
Tstg
°– 55 to +150°
°C
TL
260
°C
Characteristic
Lead Solder Temperature — Maximum
(10 Second Duration)
(1) Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
(2) FR-5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola TVS/Zener Device Data
24 Watt Peak Power Data Sheet
5-55
MMBZ5V6ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA)
Max Reverse
Leakage Current
Breakdown Voltage
VZT(4)
(V)
@ I ZT
(mA)
Min
Nom
Max
5.32
5.6(7)
5.88
IR @ VR
(uA)
(V)
20
5.0
Max Zener Impedance (6)
ZZT @ IZT
(Ω)
(mA)
3.0
ZZK @ IZK
(Ω)
(mA)
11
1600
0.25
Max
Reverse
S
Surge
Current
IRSM(5)
(A)
Max Reverse
Voltage @
IRSM(5)
(Clamping
Voltage)
VRSM
(V)
Maximum
Temperature
Coefficient of
VZ
(mV/°C)
3.0
8.0
1.26
(4) VZ measured at pulse test current IT at an ambient temperature of 25°C.
(5) Surge current waveform per Figure 5 and derate per Figure 6.
(6) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
(7) Other voltages may be available upon request. Please contact your Motorola representative.
.
TYPICAL CHARACTERISTICS
10000
VZ @ IT
IR, REVERSE LEAKAGE CURRENT (nA)
VZ, BREAKDOWN VOLTAGE (VOLTS)
8
7
BIDIRECTIONAL
6
5
UNIDIRECTIONAL
4
– 50
0
50
100
1000
100
– 50
150
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
Figure 2. Typical Leakage Current
versus Temperature
300
300
280
PD , POWER DISSIPATION (mW)
C, CAPACITANCE (pF)
260
240
UNIDIRECTIONAL
220
200
180
BIDIRECTIONAL
160
140
120
100
0
1
2
3
250
ALUMINA SUBSTRATE
200
150
100
FR-5 BOARD
50
0
0
25
50
75
100
125
150
BIAS (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Typical Capacitance versus Bias Voltage
Figure 4. Steady State Power Derating Curve
24 Watt Peak Power Data Sheet
5-56
Motorola TVS/Zener Device Data
175
MMBZ5V6ALT1
tr
PEAK VALUE — IRSM
VALUE (%)
100
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
tr ≤ 10 µs
IRSM
HALF VALUE —
2
50
tP
0
0
1
2
3
4
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25 ° C
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Pulse Waveform
Figure 6. Pulse Derating Curve
175
200
BIDIRECTIONAL
10
UNIDIRECTIONAL
1.0
10
100
1000
Ppk(NOM), NNOMINAL PEAK POWER (W)
100
RECTANGULAR
WAVEFORM, TA = 25°C
Ppk PEAK SURGE POWER (W)
90
t, TIME (ms)
100
1.0
0.1
100
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1.0
0.1
1.0
10
100
PW, PULSEWIDTH (ms)
PW, PULSEWIDTH (ms)
Figure 7. Maximum Non-repetitive Surge
Power, Ppk versus PW
Figure 8. Maximum Non-repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
Motorola TVS/Zener Device Data
1000
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
24 Watt Peak Power Data Sheet
5-57
MMBZ5V6ALT1
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in a SOT-23 package protects two separate lines using only one package. This
adds flexibility and creativity to PCB design especially when
board space is at a premium. Two simplified examples of
MMBZ5V6ALT1 TVS applications are illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
FUNCTIONAL
DECODER
D
GND
MMBZ5V6ALT1
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
CPU
I/O
MMBZ5V6ALT1
CLOCK
CONTROL BUS
GND
MMBZ5V6ALT1
24 Watt Peak Power Data Sheet
5-58
Motorola TVS/Zener Device Data
MMBZ5V6ALT1
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to insure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a
solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT-23
SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the values
provided on the data sheet for the SOT-23 package, PD can
be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 225 milliwatts.
PD =
150°C – 25°C
= 225 milliwatts
556°C/W
The 556°C/W for the SOT-23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT-23 package. Another alternative would be to use
a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal Clad,
an aluminum core board, the power dissipation can be
doubled using the same footprint.
Motorola TVS/Zener Device Data
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
24 Watt Peak Power Data Sheet
5-59
Transient Voltage Suppressors — Surface Mounted
24 Watt Peak Power
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
A
L
3
B
1
V
S
DIM
A
B
C
D
G
H
J
K
L
S
V
2
G
C
H
D
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
J
K
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
CASE 318-07
PLASTIC
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MULTIPLE PACKAGE QUANTITY (MPQ)
REQUIREMENTS
Package Option
Type No. Suffix
MPQ (Units)
Tape and Reel
T1
3K
Tape and Reel
T3
10K
(Refer to Section 10 for more information on Packaging Specifications.)
24 Watt Peak Power Data Sheet
5-60
Motorola TVS/Zener Device Data
Order this document
by MMBZ15VDLT1/D
SEMICONDUCTOR TECHNICAL DATA
! "
! ! Motorola Preferred Devices
SOT–23
COMMON CATHODE
DUAL ZENER
OVERVOLTAGE
TRANSIENT SUPPRESSORS
40 WATTS
PEAK POWER
Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common cathode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
3
1
Specification Features:
• SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
2
CASE 318–08
TO–236AB
LOW PROFILE SOT–23
• Peak Power — 40 Watts @ 1.0 ms (Bidirectional), per Figure 5 Waveform
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 100 nA
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
1
Mechanical Characteristics:
3
• Void Free, Transfer–Molded, Thermosetting Plastic Case
2
• Corrosion Resistant Finish, Easily Solderable
TERMINAL 1 – ANODE
TERMINAL 2 – ANODE
TERMINAL 3 – CATHODE
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
@ TA ≤ 25°C
Ppk
40
Watts
Total Power Dissipation on FR–5 Board (2) @ TA = 25°C
Derate above 25°C
°PD°
225
1.8
°mW°
mW/°C
Thermal Resistance Junction to Ambient
RθJA
556
°C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C
Derate above 25°C
°PD°
300
2.4
°mW
mW/°C
Thermal Resistance Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature Range
TJ
Tstg
°– 55 to +150°
°C
TL
230
°C
Characteristic
Lead Solder Temperature — Maximum (10 Second Duration)
1. Non–repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR–5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1
 Motorola, Inc. 1996
MMBZ15VDLT1 MMBZ27VCLT1
MOTOROLA
61
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
VBR(4)
(V)
Min
Nom
Max
14.3
15
15.8
@ IT
(mA)
Reverse Voltage
Working Peak
VRWM
(V)
Max Reverse
Leakage Current
IRWM
IR (nA)
Max Reverse
Surge Current
IRSM(5)
(A)
Max Reverse
Voltage @ IRSM(5)
(Clamping Voltage)
VRSM
(V)
Maximum
Temperature
Temperat
re
Coefficient of
VBR
(mV/°C)
1.0
12.8
100
1.9
21.2
12
@ IT
(mA)
Reverse Voltage
Working Peak
VRWM
(V)
Max Reverse
Leakage Current
IRWM
IR (nA)
Max Reverse
Surge Current
IRSM(5)
(A)
Max Reverse
Voltage
V
lt
@ IRSM(5)
(Clamping Voltage)
VRSM
(V)
Maximum
Temperature
T
t
Coefficient of
VBR
(mV/°C)
1.0
22
50
1.0
38
26
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
VBR(4)
(V)
Min
Nom
Max
25.65
27
28.35
(4) VBR measured at pulse test current IT at an ambient temperature of 25°C.
(5) Surge current waveform per Figure 5 and derate per Figure 6.
TYPICAL CHARACTERISTICS
MMBZ15VDLT1
MMBZ27VCLT1
29
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ I T )
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ I T )
17
BIDIRECTIONAL
16
15
14
UNIDIRECTIONAL
13
– 40
+ 25
+ 85
TEMPERATURE (°C)
Figure 1A. Typical Breakdown Voltage
versus Temperature
MOTOROLA
62
+ 125
BIDIRECTIONAL
28
27
26
25
– 55
+ 25
+ 85
TEMPERATURE (°C)
+ 125
Figure 1B. Typical Breakdown Voltage
versus Temperature
MMBZ15VDLT1 MMBZ27VCLT1
MMBZ15VDLT1
100
10000
90
80
C, CAPACITANCE (pF)
IR (nA)
100
10
1
0.1
70
UNIDIRECTIONAL
60
50
40
BIDIRECTIONAL
30
20
10
0.01
– 40
+ 25
+ 85
TEMPERATURE (°C)
0
+ 125
1
BIAS (V)
Figure 2. Typical Leakage Current
versus Temperature
Figure 3. Typical Capacitance versus
Bias Voltage
300
tr
250
ALUMINA SUBSTRATE
PEAK VALUE — IRSM
100
200
VALUE (%)
PD , POWER DISSIPATION (mW)
12.8
150
HALF VALUE —
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IRSM.
tr ≤ 10 µs
IRSM
2
50
100
FR–5 BOARD
tP
50
0
0
25
50
75
100
125
TEMPERATURE (°C)
150
175
0
0
1
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25 ° C
Figure 4. Steady State Power Derating Curve
2
3
t, TIME (ms)
4
Figure 5. Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
175
200
Figure 6. Pulse Derating Curve
MMBZ15VDLT1 MMBZ27VCLT1
MOTOROLA
63
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MOTOROLA
64
MMBZ15VDLT1 MMBZ27VCLT1
OUTLINE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
A
L
3
B S
1
V
2
G
C
D
H
K
J
CASE 318–08
ISSUE AE
TO–236AB
MMBZ15VDLT1 MMBZ27VCLT1
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
MOTOROLA
65
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MOTOROLA
66
◊
*MMBZ15VDLT1/D*
MMBZ15VDLT1/D
MMBZ15VDLT1 MMBZ27VCLT1
Transient Voltage Suppressors — Surface Mounted
40 Watt Peak Power
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
A
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013 0.100
0.085 0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
0.037
0.95
0.037
0.95
L
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
3
B
1
V
S
2
0.035
0.9
G
0.031
0.8
C
D
0.079
2.0
inches
mm
SOT-23 Footprint
H
K
J
CASE 318-07
PLASTIC
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MULTIPLE PACKAGE QUANTITY (MPQ)
REQUIREMENTS
Package Option
Type No. Suffix
MPQ (Units)
Tape and Reel
T1
3K
Tape and Reel
T3
10K
(Refer to Section 10 for more information on Packaging Specifications.)
Motorola TVS/Zener Device Data
24 Watt Peak Power Data Sheet
5-67
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
GENERAL
DATA
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
600 WATT
PEAK POWER
Zener Transient Voltage Suppressors
The SMB series is designed to protect voltage sensitive components from high voltage,
high energy transients. They have excellent clamping capability, high surge capability, low
zener impedance and fast response time. The SMB series is supplied in Motorola’s
exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in
communication systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other industrial/consumer applications.
Specification Features:
Standard Zener Breakdown Voltage Range — 6.8 to 200 V
Stand-off Voltage Range — 5 to 170 V
Peak Power — 600 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 µA Above 10 V
UL Recognition
Response Time Typically < 1 ns
•
•
•
•
•
•
•
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT
SUPPRESSORS
6.8–200 VOLTS
600 WATT PEAK POWER
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by molded polarity notch. When operated in zener mode,
will be positive with respect to anode
MOUNTING POSITION: Any
LEADS: Modified L-Bend providing more contact area to bond pad
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seremban, Malaysia
CASE 403A
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (1)
@ TL ≤ 25°C
PPK
600
Watts
Forward Surge Current (2)
@ TA = 25°C
IFSM
100
Amps
Thermal Resistance from Junction to Lead (typical)
RqJL
25
°C/W
TJ, Tstg
– 65 to +150
°C
Operating and Storage Temperature Range
NOTES: 1. Nonrepetitive current pulse per Figure 2 and derated above TA = 25°C per Figure 3.
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
REV 1
600 Watt Peak Power Data Sheet
5-68
Motorola TVS/Zener Device Data
GENERAL DATA — 600 WATT PEAK POWER
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
tr
100
10
PEAK VALUE – IRSM
VALUE (%)
PP, PEAK POWER (kW)
100
I
HALF VALUE – RSM
2
50
1
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF IRSM.
tr ≤ 10 µs
tP
0.1
0.1 µs
1 µs
10 µs
100 µs
1 ms
10 ms
0
0
1
2
tP, PULSE WIDTH
4
t, TIME (ms)
Figure 1. Pulse Rating
Curve
Figure 2. Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
3
TYPICAL PROTECTION CIRCUIT
140
Zin
120
100
80
LOAD
Vin
VL
60
40
20
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Pulse Derating Curve
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot condition
associated with the inductance of the device and the
inductance of the connection method. The capacitive effect is
of minor importance in the parallel protection scheme because
it only produces a time delay in the transition from the
operating voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces
an overshoot in the voltage across the equipment or
component being protected as shown in Figure 5. Minimizing
this overshoot is very important in the application, since the
main purpose for adding a transient suppressor is to clamp
voltage spikes. The SMB series have a very good response
time, typically < 1 ns and negligible inductance. However,
external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing
Motorola TVS/Zener Device Data
the suppressor device as close as possible to the equipment
or components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be in
error as the 10 ms pulse has a higher derating factor than the
10 µs pulse. However, when the derating factor for a given
pulse of Figure 6 is multiplied by the peak power value of
Figure 1 for the same pulse, the results follow the expected
trend.
600 Watt Peak Power Data Sheet
5-69
GENERAL DATA — 600 WATT PEAK POWER
V
V
Vin (TRANSIENT)
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 4.
Figure 5.
1
0.7
0.5
DERATING FACTOR
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 µs
0.02
10 µs
0.01
0.1
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
100
Figure 6. Typical Derating Factor for Duty Cycle
UL RECOGNITION
The entire series has Underwriters Laboratory Recognition
for the classification of protectors (QVGV2) under the UL
standard for safety 497B and File #116110. Many competitors
only have one or two devices recognized or have recognition
in a non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage
600 Watt Peak Power Data Sheet
5-70
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and several
more.
Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for
much more to be included in their Protector category.
Motorola TVS/Zener Device Data
1SMB5.0AT3 through 1SMB170AT3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
mA
Maximum
Clamping Voltage
VC @ Ipp
Volts
Peak
Pulse Current
(See Figure 2)
Ipp{
Amps
Maximum
Reverse
Re
erse Leakage
@ VR
IR
µA
Device
Marking
6.40
6.67
7.22
7.78
10
10
10
10
9.2
10.3
11.2
12.0
65.2
58.3
53.6
50.0
800
800
500
200
KE
KG
KK
KM
7.5
8.0
8.5
9.0
8.33
8.89
9.44
10.0
1.0
1.0
1.0
1.0
12.9
13.6
14.4
15.4
46.5
44.1
41.7
39.0
100
50
10
5.0
KP
KR
KT
KV
1SMB10AT3
1SMB11AT3
1SMB12AT3
1SMB13AT3
10
11
12
13
11.1
12.2
13.3
14.4
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
5.0
5.0
5.0
5.0
KX
KZ
LE
LG
1SMB14AT3
1SMB15AT3
1SMB16AT3
1SMB17AT3
14
15
16
17
15.6
16.7
17.8
18.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
5.0
5.0
5.0
5.0
LK
LM
LP
LR
1SMB18AT3
1SMB20AT3
1SMB22AT3
1SMB24AT3
18
20
22
24
20.0
22.2
24.4
26.7
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
5.0
5.0
5.0
5.0
LT
LV
LX
LZ
1SMB26AT3
1SMB28AT3
1SMB30AT3
1SMB33AT3
26
28
30
33
28.9
31.1
33.3
36.7
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
5.0
5.0
5.0
5.0
ME
MG
MK
MM
1SMB36AT3
1SMB40AT3
1SMB43AT3
1SMB45AT3
36
40
43
45
40.0
44.4
47.8
50.0
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.7
10.3
9.3
8.6
8.3
5.0
5.0
5.0
5.0
MP
MR
MT
MV
1SMB48AT3
1SMB51AT3
1SMB54AT3
1SMB58AT3
48
51
54
58
53.3
56.7
60.0
64.4
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
5.0
5.0
5.0
5.0
MX
MZ
NE
NG
1SMB60AT3
1SMB64AT3
1SMB70AT3
1SMB75AT3
60
64
70
75
66.7
71.1
77.8
83.3
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
5.0
5.0
5.0
5.0
NK
NM
NP
NR
1SMB78AT3
1SMB85AT3
1SMB90AT3
1SMB100AT3
78
85
90
100
86.7
94.4
100
111
1.0
1.0
1.0
1.0
126
137
146
162
4.7
4.4
4.1
3.7
5.0
5.0
5.0
5.0
NT
NV
NX
NZ
1SMB110AT3
1SMB120AT3
1SMB130AT3
1SMB150AT3
110
120
130
150
122
133
144
167
1.0
1.0
1.0
1.0
177
193
209
243
3.4
3.1
2.9
2.5
5.0
5.0
5.0
5.0
PE
PG
PK
PM
1SMB160AT3
1SMB170AT3
160
170
178
189
1.0
1.0
259
275
2.3
2.2
5.0
5.0
PP
PR
Breakdown Voltage*
Device{{
Reverse
Stand-Off Voltage
VR
Volts (1)
Volts
Min
1SMB5.0AT3
1SMB6.0AT3
1SMB6.5AT3
1SMB7.0AT3
5.0
6.0
6.5
7.0
1SMB7.5AT3
1SMB8.0AT3
1SMB8.5AT3
1SMB9.0AT3
VBR @ IT
Note 1: A transient suppressor is normally selected according to the reverse ”Stand Off Voltage” (VR) which should be equal to or greater than the DC or continuous peak operating
voltage level.
* * VBR measured at pulse test current IT at an ambient temperaure of 25°C.
{{ Surge current waveform per Figure 2 and derate per Figure 3 of the General Data — 600 Watt at the beginning of this group.
{{ T3 suffix designates tape and reel of 2500 units.
ABBREVIATIONS AND SYMBOLS
VR
Stand Off Voltage. Applied reverse voltage to assure a
non-conductive condition (See Note 1).
V(BR)min This is the minimum breakdown voltage the device will
exhibit and is used to assure that conduction does not
occur prior to this voltage level at 25°C.
VC
Maximum Clamping Voltage. The maximum peak voltage appearing across the transient suppressor when
IPP
PP
IR
subjected to the peak pusle current in a one millisecond
time interval. The peak pulse voltages are the combination of voltage rise due to both the series resistance and
thermal rise.
Peak Pulse Current — See Figure 2
Peak Pulse Power
Reverse Leakage
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
600 Watt Peak Power Data Sheet
5-71
P6SMB6.8AT3 through P6SMB200AT3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
mA
Maximum
Clamping Voltage
VC @ Ipp
Volts
Peak
Pulse Current
(See Figure 2)
Ipp{
Amps
Maximum
Reverse
Re
erse Leakage
@ VR
IR
µA
Device
Marking
11.1
12.2
13.3
14.4
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
5.0
5.0
5.0
5.0
KXC
KZC
LEC
LGC
14
15
16
17
15.6
16.7
17.8
18.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
5.0
5.0
5.0
5.0
LKC
LMC
LPC
LRC
1SMB18CAT3
1SMB20CAT3
1SMB22CAT3
1SMB24CAT3
18
20
22
24
20.0
22.2
24.4
26.7
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
5.0
5.0
5.0
5.0
LTC
LVC
LXC
LZC
1SMB26CAT3
1SMB28CAT3
1SMB30CAT3
1SMB33CAT3
26
28
30
33
28.9
31.1
33.3
36.7
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
5.0
5.0
5.0
5.0
MEC
MGC
MKC
MMC
1SMB36CAT3
1SMB40CAT3
1SMB43CAT3
1SMB45CAT3
36
40
43
45
40.0
44.4
47.8
50.0
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.7
10.3
9.3
8.6
8.3
5.0
5.0
5.0
5.0
MPC
MRC
MTC
MVC
1SMB48CAT3
1SMB51CAT3
1SMB54CAT3
1SMB58CAT3
48
51
54
58
53.3
56.7
60.0
64.4
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
5.0
5.0
5.0
5.0
MXC
MZC
NEC
NGC
1SMB60CAT3
1SMB64CAT3
1SMB70CAT3
1SMB75CAT3
60
64
70
75
66.7
71.1
77.8
83.3
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
5.0
5.0
5.0
5.0
NKC
NMC
NPC
NRC
1SMB78CAT3
78
86.7
1.0
126
4.7
5.0
NTC
Breakdown Voltage*
Reverse
Stand-Off Voltage
VR
Volts (1)
Volts
Min
1SMB10CAT3
1SMB11CAT3
1SMB12CAT3
1SMB13CAT3
10
11
12
13
1SMB14CAT3
1SMB15CAT3
1SMB16CAT3
1SMB17CAT3
Device{{
VBR @ IT
Note 1: A transient suppressor is normally selected according to the reverse ”Stand Off Voltage” (VR) which should be equal to or greater than the DC or continuous peak operating
voltage level.
* * VBR measured at pulse test current IT at an ambient temperaure of 25°C.
{{ Surge current waveform per Figure 2 and derate per Figure 3 of the General Data — 600 Watt at the beginning of this group.
{{ T3 suffix designates tape and reel of 2500 units.
ABBREVIATIONS AND SYMBOLS
VR
Stand Off Voltage. Applied reverse voltage to assure a
non-conductive condition (See Note 1).
V(BR)min This is the minimum breakdown voltage the device will
exhibit and is used to assure that conduction does not
occur prior to this voltage level at 25°C.
VC
Maximum Clamping Voltage. The maximum peak voltage appearing across the transient suppressor when
IPP
PP
IR
subjected to the peak pusle current in a one millisecond
time interval. The peak pulse voltages are the combination of voltage rise due to both the series resistance and
thermal rise.
Peak Pulse Current — See Figure 2
Peak Pulse Power
Reverse Leakage
Devices listed in bold, italic are Motorola preferred devices.
600 Watt Peak Power Data Sheet
5-72
Motorola TVS/Zener Device Data
1SMB10CAT3 through 1SMB78CAT3
Bi–Directional
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF** = 50 A for all types.
D i {{
Device
Min
Nom
Max
mA
Working
Peak
R
Reverse
Voltage
VRWM
Volts
P6SMB6.8AT3
P6SMB7.5AT3
P6SMB8.2AT3
P6SMB9.1AT3
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
5.8
6.4
7.02
7.78
1000
500
200
50
57
53
50
45
10.5
11.3
12.1
13.4
0.057
0.061
0.065
0.068
6V8A
7V5A
8V2A
9V1A
P6SMB10AT3
P6SMB11AT3
P6SMB12AT3
P6SMB13AT3
9.5
10.5
11.4
12.4
10
11
12
13
10.5
11.6
12.6
13.7
1
1
1
1
8.55
9.4
10.2
11.1
10
5
5
5
41
38
36
33
14.5
15.6
16.7
18.2
0.073
0.075
0.078
0.081
10A
11A
12A
13A
P6SMB15AT3
P6SMB16AT3
P6SMB18AT3
P6SMB20AT3
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
12.8
13.6
15.3
17.1
5
5
5
5
28
27
24
22
21.2
22.5
25.2
27.7
0.084
0.086
0.088
0.09
15A
16A
18A
20A
P6SMB22AT3
P6SMB24AT3
P6SMB27AT3
P6SMB30AT3
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
18.8
20.5
23.1
25.6
5
5
5
5
20
18
16
14.4
30.6
33.2
37.5
41.4
0.092
0.094
0.096
0.097
22A
24A
27A
30A
P6SMB33AT3
P6SMB36AT3
P6SMB39AT3
P6SMB43AT3
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
45.2
1
1
1
1
28.2
30.8
33.3
36.8
5
5
5
5
13.2
12
11.2
10.1
45.7
49.9
53.9
59.3
0.098
0.099
0.1
0.101
33A
36A
39A
43A
P6SMB47AT3
P6SMB51AT3
P6SMB56AT3
P6SMB62AT3
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
40.2
43.6
47.8
53
5
5
5
5
9.3
8.6
7.8
7.1
64.8
70.1
77
85
0.101
0.102
0.103
0.104
47A
51A
56A
62A
P6SMB68AT3
P6SMB75AT3
P6SMB82AT3
P6SMB91AT3
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
58.1
64.1
70.1
77.8
5
5
5
5
6.5
5.8
5.3
4.8
92
103
113
125
0.104
0.105
0.105
0.106
68A
75A
82A
91A
P6SMB100AT3
P6SMB110AT3
P6SMB120AT3
P6SMB130AT3
95
105
114
124
100
110
120
130
105
116
126
137
1
1
1
1
85.5
94
102
111
5
5
5
5
4.4
4
3.6
3.3
137
152
165
179
0.106
0.107
0.107
0.107
100A
110A
120A
130A
P6SMB150AT3
P6SMB160AT3
P6SMB170AT3
P6SMB180AT3
143
152
162
171
150
160
170
180
158
168
179
189
1
1
1
1
128
136
145
154
5
5
5
5
2.9
2.7
2.6
2.4
207
219
234
246
0.108
0.108
0.108
0.108
150A
160A
170A
180A
P6SMB200AT3
190
200
210
1
171
5
2.2
274
0.108
200A
Breakdown Voltage*
VBR @ IT
Volts
Maximum
Reverse
L k
Leakage
@ VRWM
IR
µA
Maximum
Reverse
S
Surge
Current
IRSM{
Amps
Maximum
Reverse Voltage
g
@ IRSM
(Clamping Voltage)
VRSM
Volts
Maximum
Temperature
Coefficient
of VBR
%/°C
D i
Device
Marking
* * VBR measured at pulse test current IT at an ambient temperaure of 25°C.
* * 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
{{ Surge current waveform per Figure 2 and derate per Figure 3 of the General Data — 600 Watt at the beginning of this group.
{{ T3 suffix designates tape and reel of 2500 units.
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
600 Watt Peak Power Data Sheet
5-73
P6SMB11CAT3 through P6SMB91CAT3
Bi–Directional
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF** = 50 A for all types.
Maximum
Reverse
Leakage
@ VRWM
IR
µA
Maximum
Reverse
Surge
Current
IRSM{
Amps
Maximum
Reverse Voltage
@ IRSM
(Clamping
Voltage)
VRSM
Volts
Maximum
Temperature
Coefficient
of VBR
%/°C
D i
Device
Marking
Device
D
i {{
Min
Nom
Max
mA
Working
Peak
Reverse
Voltage
VRWM
Volts
P6SMB11CAT3
P6SMB12CAT3
P6SMB13CAT3
10.5
11.4
12.4
11
12
13
11.6
12.6
13.7
1
1
1
9.4
10.2
11.1
5
5
5
38
36
33
15.6
16.7
18.2
0.075
0.078
0.081
11C
12C
13C
P6SMB15CAT3
P6SMB16CAT3
P6SMB18CAT3
P6SMB20CAT3
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
12.8
13.6
15.3
17.1
5
5
5
5
28
27
24
22
21.2
22.5
25.2
27.7
0.084
0.086
0.088
0.09
15C
16C
18C
20C
P6SMB22CAT3
P6SMB24CAT3
P6SMB27CAT3
P6SMB30CAT3
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
18.8
20.5
23.1
25.6
5
5
5
5
20
18
16
14.4
30.6
33.2
37.5
41.4
0.092
0.094
0.096
0.097
22C
24C
27C
30C
P6SMB33CAT3
P6SMB36CAT3
P6SMB39CAT3
P6SMB43CAT3
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
45.2
1
1
1
1
28.2
30.8
33.3
36.8
5
5
5
5
13.2
12
11.2
10.1
45.7
49.9
53.9
59.3
0.098
0.099
0.1
0.101
33C
36C
39C
43C
P6SMB47CAT3
P6SMB51CAT3
P6SMB56CAT3
P6SMB62CAT3
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
40.2
43.6
47.8
53
5
5
5
5
9.3
8.6
7.8
7.1
64.8
70.1
77
85
0.101
0.102
0.103
0.104
47C
51C
56C
62C
P6SMB68CAT3
P6SMB75CAT3
P6SMB82CAT3
P6SMB91CAT3
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
58.1
64.1
70.1
77.8
5
5
5
5
6.5
5.8
5.3
4.8
92
103
113
125
0.104
0.105
0.105
0.106
68C
75C
82C
91C
Breakdown Voltage*
VBR @ IT
Volts
* * VBR measured at pulse test current IT at an ambient temperaure of 25°C.
* * 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
{{ Surge current waveform per Figure 2 and derate per Figure 3 of the General Data — 600 Watt at the beginning of this group.
{{ T3 suffix designates tape and reel of 2500 units.
600 Watt Peak Power Data Sheet
5-74
Motorola TVS/Zener Device Data
Transient Voltage Suppressors — Surface Mounted
600 Watt Peak Power
0.089
2.261
S
0.108
2.743
A
D
0.085
2.159
B
inches
mm
SMB Footprint
C
K
P
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
H
CASE 403A
PLASTIC
DIM
A
B
C
D
H
J
K
P
S
INCHES
MIN
MAX
0.160 0.180
0.130 0.150
0.075 0.095
0.077 0.083
0.0020 0.0060
0.006 0.012
0.030 0.050
0.020 REF
0.205 0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051 0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MULTIPLE PACKAGE QUANTITY (MPQ)
REQUIREMENTS
Package Option
Type No. Suffix
MPQ (Units)
Tape and Reel
T3 (13 inch reel)
2.5K
(Refer to Section 10 for more information on Packaging Specifications.)
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
600 Watt Peak Power Data Sheet
5-75
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
GENERAL
DATA
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
1500 WATT
PEAK POWER
Zener Transient Voltage Suppressors
The SMC series is designed to protect voltage sensitive components from high voltage,
high energy transients. They have excellent clamping capability, high surge capability, low
zener impedance and fast response time. The SMC series is supplied in Motorola’s
exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in
communication systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other industrial/consumer applications.
Specification Features:
Standard Zener Breakdown Voltage Range — 6.8 to 91 V
Stand-off Voltage Range — 5 to 78 V
Peak Power — 1500 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 µA Above 10 V
UL Recognition
Maximum Temperature Coefficient Specified
Available in Tape and Reel
Response Time Typically < 1 ns
•
•
•
•
•
•
•
•
•
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT
SUPPRESSORS
6.8–91 VOLTS
1500 WATT PEAK POWER
CASE 403
PLASTIC
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by molded polarity notch. When operated in zener mode,
will be positive with respect to anode
MOUNTING POSITION: Any
LEADS: Modified L-Bend providing more contact area to bond pads
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seremban, Malaysia
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (1)
@ TL ≤ 25°C
PPK
1500
Watts
Forward Surge Current (2)
@ TA = 25°C
IFSM
200
Amps
RqJL
15
°C/W
TJ, Tstg
– 65 to +150
°C
Thermal Resistance from Junction to Lead (typical)
Operating and Storage Temperature Range
NOTES: 1. Nonrepetitive current pulse per Figure 2 and derated above TA = 25°C per Figure 3.
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
REV 1
1500 Watt Peak Power Data Sheet
5-76
Motorola TVS/Zener Device Data
GENERAL DATA — 1500 WATT PEAK POWER
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
100
10
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF IRSM.
tr
PEAK VALUE – IRSM
VALUE (%)
PP, PEAK POWER (kW)
100
tr ≤ 10 µs
I
HALF VALUE – RSM
2
50
tP
1
0.1 µs
1 µs
10 µs
100 µs
1 ms
0
10 ms
0
1
2
tP, PULSE WIDTH
3
4
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
1000
140
120
100
80
60
40
20
0
TL = 25°C
tP = 10 µs
500
I Z , ZENER CURRENT (AMPS)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
160
0
25
50
75
100
125
150
VZ (NOM) = 6.8 TO 13 V
20 V
43 V
24 V
75 V
200
100
120 V
50
180 V
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5
7
10
20
30
TA, AMBIENT TEMPERATURE (°C)
∆VZ, INSTANTANEOUS INCREASE IN VZ ABOVE VZ (NOM) (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Dynamic Impedance
UL RECOGNITION
The entire series has Underwriters Laboratory Recognition
for the classification of protectors (QVGV2) under the UL
standard for safety 497B and File #116110. Many competitors
only have one or two devices recognized or have recognition
in a non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage
Motorola TVS/Zener Device Data
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and several
more.
Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for
much more to be included in their Protector category.
1500 Watt Peak Power Data Sheet
5-77
GENERAL DATA — 1500 WATT PEAK POWER
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it
only produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 5.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces
an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. The SMC series have a very good response time, typically < 1 ns and negligible inductance. However, external
inductive effects could produce unacceptable overshoot.
Proper circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 7. Average power must be derated as the lead or ambient temperature rises above 25°C. The average power derating curve normally given on data sheets may be normalized
and used for this purpose.
At first glance the derating curves of Figure 7 appear to be in
error as the 10 ms pulse has a higher derating factor than the
10 µs pulse. However, when the derating factor for a given
pulse of Figure 7 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
Vin
VL
Vin (TRANSIENT)
V
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
VL
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
Figure 5.
t
Figure 6.
1
0.7
0.5
DERATING FACTOR
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
100 µs
0.02
10 µs
0.01
0.1
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
100
Figure 7. Typical Derating Factor for Duty Cycle
1500 Watt Peak Power Data Sheet
5-78
Motorola TVS/Zener Device Data
1SMC5.0AT3 through 1SMC78AT3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
mA
Maximum
Clamping Voltage
VC @ Ipp
Volts
Peak
Pulse Current
(See Figure 2)
Ipp{
Amps
Maximum
Reverse
Re
erse Leakage
@ VR
IR
µA
Device
Marking
6.40
6.67
7.22
7.78
10
10
10
10
9.2
10.3
11.2
12.0
163.0
145.6
133.9
125.0
1000
1000
500
200
GDE
GDG
GDK
GDM
7.5
8.0
8.5
9.0
8.33
8.89
9.44
10.0
1.0
1.0
1.0
1.0
12.9
13.6
14.4
15.4
116.3
110.3
104.2
97.4
100
50
20
10
GDP
GDR
GDT
GDV
1SMC10AT3
1SMC11AT3
1SMC12AT3
1SMC13AT3
10
11
12
13
11.1
12.2
13.3
14.4
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
88.2
82.4
75.3
69.7
5.0
5.0
5.0
5.0
GDX
GDZ
GEE
GEG
1SMC14AT3
1SMC15AT3
1SMC16AT3
1SMC17AT3
14
15
16
17
15.6
16.7
17.8
18.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
64.7
61.5
57.7
53.3
5.0
5.0
5.0
5.0
GEK
GEM
GEP
GER
1SMC18AT3
1SMC20AT3
1SMC22AT3
1SMC24AT3
18
20
22
24
20.0
22.2
24.4
26.7
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
51.4
46.3
42.2
38.6
5.0
5.0
5.0
5.0
GET
GEV
GEX
GEZ
1SMC26AT3
1SMC28AT3
1SMC30AT3
1SMC33AT3
26
28
30
33
28.9
31.1
33.3
36.7
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
35.6
33.0
31.0
28.1
5.0
5.0
5.0
5.0
GFE
GFG
GFK
GFM
1SMC36AT3
1SMC40AT3
1SMC43AT3
1SMC45AT3
36
40
43
45
40.0
44.4
47.8
50.0
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.7
25.8
23.2
21.6
20.6
5.0
5.0
5.0
5.0
GFP
GFR
GFT
GFV
1SMC48AT3
1SMC51AT3
1SMC54AT3
1SMC58AT3
48
51
54
58
53.3
56.7
60.0
64.4
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
19.4
18.2
17.2
16.0
5.0
5.0
5.0
5.0
GFX
GFZ
GGE
GGG
1SMC60AT3
1SMC64AT3
1SMC70AT3
1SMC75AT3
60
64
70
75
66.7
71.1
77.8
83.3
1.0
1.0
1.0
1.0
96.8
103
113
121
15.5
14.6
13.3
12.4
5.0
5.0
5.0
5.0
GGK
GGM
GGP
GGR
1SMC78AT3
78
86.7
1.0
126
11.4
5.0
GGT
Breakdown Voltage*
Device{{
Reverse
Stand-Off Voltage
VR
Volts (1)
Volts
Min
1SMC5.0AT3
1SMC6.0AT3
1SMC6.5AT3
1SMC7.0AT3
5.0
6.0
6.5
7.0
1SMC7.5AT3
1SMC8.0AT3
1SMC8.5AT3
1SMC9.0AT3
VBR @ IT
Note 1: A transient suppressor is normally selected according to the reverse ”Stand Off Voltage” (VR) which should be equal to or greater than the DC or continuous peak operating
voltage level.
* * VBR measured at pulse test current IT at an ambient temperaure of 25°C.
{{ Surge current waveform per Figure 2 and derate per Figure 3 of the General Data — 1500 Watt at the beginning of this group.
{{ T3 suffix designates tape and reel of 2500 units.
ABBREVIATIONS AND SYMBOLS
VR
Stand Off Voltage. Applied reverse voltage to assure a
non-conductive condition (See Note 1).
V(BR)min This is the minimum breakdown voltage the device will
exhibit and is used to assure that conduction does not
occur prior to this voltage level at 25°C.
VC
Maximum Clamping Voltage. The maximum peak voltage appearing across the transient suppressor when
IPP
PP
IR
subjected to the peak pusle current in a one millisecond
time interval. The peak pulse series resistance and
thermal rise.
Peak Pulse Current — See Figure 2
Peak Pulse Power
Reverse Leakage
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
1500 Watt Peak Power Data Sheet
5-79
1SMC6.8AT3 through 1.5SMC91AT3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF** = 100 A for all types.
D i {{
Device
Min
Nom
Max
mA
Working
Peak
R
Reverse
Voltage
VRWM
Volts
1.5SMC6.8AT3
1.5SMC7.5AT3
1.5SMC8.2AT3
1.5SMC9.1AT3
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
5.8
6.4
7.02
7.78
1000
500
200
50
143
132
124
112
10.5
11.3
12.1
13.4
0.057
0.061
0.065
0.068
6V8A
7V5A
8V2A
9V1A
1.5SMC10AT3
1.5SMC11AT3
1.5SMC12AT3
1.5SMC13AT3
9.5
10.5
11.4
12.4
10
11
12
13
10.5
11.6
12.6
13.7
1
1
1
1
8.55
9.4
10.2
11.1
10
5
5
5
103
96
90
82
14.5
15.6
16.7
18.2
0.073
0.075
0.078
0.081
10A
11A
12A
13A
1.5SMC15AT3
1.5SMC16AT3
1.5SMC18AT3
1.5SMC20AT3
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
12.8
13.6
15.3
17.1
5
5
5
5
71
67
59.5
54
21.2
22.5
25.2
27.7
0.084
0.086
0.088
0.09
15A
16A
18A
20A
1.5SMC22AT3
1.5SMC24AT3
1.5SMC27AT3
1.5SMC30AT3
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
18.8
20.5
23.1
25.6
5
5
5
5
49
45
40
36
30.6
33.2
37.5
41.4
0.092
0.094
0.096
0.097
22A
24A
27A
30A
1.5SMC33AT3
1.5SMC36AT3
1.5SMC39AT3
1.5SMC43AT3
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
45.2
1
1
1
1
28.2
30.8
33.3
36.8
5
5
5
5
33
30
28
25.3
45.7
49.9
53.9
59.3
0.098
0.099
0.1
0.101
33A
36A
39A
43A
1.5SMC47AT3
1.5SMC51AT3
1.5SMC56AT3
1.5SMC62AT3
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
40.2
43.6
47.8
53
5
5
5
5
23.2
21.4
19.5
17.7
64.8
70.1
77
85
0.101
0.102
0.103
0.104
47A
51A
56A
62A
1.5SMC68AT3
1.5SMC75AT3
1.5SMC82AT3
1.5SMC91AT3
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
58.1
64.1
70.1
77.8
5
5
5
5
16.3
14.6
13.3
12
92
103
113
125
0.104
0.105
0.105
0.106
68A
75A
82A
91A
Breakdown Voltage*
VBR @ IT
Volts
Maximum
Reverse
L k
Leakage
@ VRWM
IR
µA
Maximum
Reverse
S
Surge
Current
IRSM{
Amps
Maximum
Reverse Voltage
g
@ IRSM
(Clamping Voltage)
VRSM
Volts
Maximum
Temperature
Coefficient
of VBR
%/°C
D i
Device
Marking
* * VBR measured at pulse test current IT at an ambient temperaure of 25°C.
* * 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
{{ Surge current waveform per Figure 2 and derate per Figure 3 of General Data — 1500 Watt at the beginning of this group.
{{ T3 suffix designates tape and reel of 2500 units.
Devices listed in bold, italic are Motorola preferred devices.
1500 Watt Peak Power Data Sheet
5-80
Motorola TVS/Zener Device Data
1.5SMC6.8AT3 through 1.5SMC91AT3
Transient Voltage Suppressors — Surface Mounted
1500 Watt Peak Power
0.171
4.343
S
A
0.150
3.810
D
B
0.110
2.794
C
K
P
J
H
CASE 403
(SMC)
inches
mm
SMC Footprint
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM
A
B
C
D
H
J
K
P
S
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
6.60
7.11
0.260 0.280
5.59
6.10
0.220 0.240
1.90
2.41
0.075 0.095
2.92
3.07
0.115 0.121
0.0020 0.0060 0.051 0.152
0.15
0.30
0.006 0.012
0.76
1.27
0.030 0.050
0.020 REF
0.51 REF
7.75
8.13
0.305 0.320
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)
MULTIPLE PACKAGE QUANTITY (MPQ)
REQUIREMENTS
Package Option
Type No. Suffix
MPQ (Units)
Tape and Reel
T3 (13 inch reel)
2.5K
(Refer to Section 10 for more information on Packaging Specifications.)
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
1500 Watt Peak Power Data Sheet
5-81