ONSEMI BF256A

BF256A
BF256A is a Preferred Device
JFET - General Purpose
N–Channel
N–Channel Junction Field Effect Transistor designed for VHF and
UHF applications.
•
•
•
•
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Low Cost TO–92 Type Package
Forward Transfer Admittance, Yfs = 4.5 mmhos (Min)
Transfer Capacitance – Crss = 0.7 (Typ)
Power Gain at f = 800 MHz, Typ. = 11 dB
1 DRAIN
3
GATE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
30
Vdc
Drain–Gate Voltage
VDG
30
Vdc
Gate–Source Voltage
VGS
30
Vdc
Forward Gate Current
IG(f)
10
mAdc
360
2.88
mW
mW/°C
–65 to +150
°C
Total Device Dissipation
2 SOURCE
TO–92
CASE 29
STYLE 5
1
2
3
MARKING DIAGRAMS
PD
@ TA = 25°C
Derate above 25°C
Operating and Storage Channel
Temperature Range
Tchannel,
Tstg
BF
256A
YWW
PD, MAXIMUM CONTINUOUS
POWER DISSIPATION (mW)
500
Y
WW
= Year
= Work Week
400
ORDERING INFORMATION
300
Device
BF256A
Package
Shipping
TO–92
5000 Units/Box
200
Preferred devices are recommended choices for future use
and best overall value.
100
0
0
25
50
75
100
125
150
175
200
FREE AIR TEMPERATURE (°C)
Figure 1. Power Derating Curve
 Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 3
1
Publication Order Number:
BF256A/D
BF256A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(–IG = –1.0 µAdc, VDS = 0)
Gate–Source Breakdown Voltage
–V(BR)GSS
30
–
—
Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 200 µA)
–VGS
0.5
—
7.5
Vdc
Gate Reverse Current
(–VGS = 20 Vdc, VDS = 0)
–IGSS
—
—
5.0
nAdc
(VDS = 15 Vdc, VGS = 0)
IDSS
3.0
–
7.0
mAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (Note 1.)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
Reverse Transfer Capacitance
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
|Yfs|
4.5
5.0
–
mmhos
(VDS = 20 Vdc, –VGS = 1 Vdc, f = 1 MHz)
Crss
–
0.7
–
pF
(VDS = 20 Vdc, VGS = 0, f = 1 MHz)
Coss
–
1.0
–
pF
fgfs
–
1000
–
MHz
Cut–Off Frequency (Note 2.)
(VDS = 15 Vdc, VGS = 0)
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
10
5
9
4.5
ID, DRAIN CURRENT (mA)
GATE–SOURCE CUTOFF VOLTAGE
(–VGS(off) @ ID = 10 nA)
2. The frequency at which gfs is 0.7 of its value at 1 KHz.
VDS = 15 Vdc
8
7
6
5
4
3
2
1
0
–VGS = 0 V
4
3.5
3
0.2 V
2.5
2
0.4 V
1.5
0.6 V
1
0.8 V
0.5
BF256A
0
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
IDSS, DRAIN CURRENT (mA) @ VGS = 0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Correlation Between
–VGS(off) and IDSS
Figure 3. Drain Current versus
Drain–to–Source Voltage
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2
20
VDS = 15 Vdc
VGS = 0
Yis = gis + jbis
bis
1
10
1
0.1
–gis
0.1
1000
0.01
100
100
VDS = 15 Vdc
VGS = 0
Yfs = gfs – jbfs
10
10
gfs
–bfs
1
1
10
0.1
1000
100
f, FREQUENCY (MHz)
Figure 4. Input Admittance versus Frequency
Figure 5. Forward Transfer Admittance versus
Frequency
10
VDS = 15 Vdc
VGS = 0
Yrs = –grs – jbrs
0.1
1
–brs
–grs
0.01
0.1
100
10
VDS = 15 Vdc
VGS = 0
Yos = gos + jbos
gos
0.1
1
bos
0.1
0.01
0.01
10
1
0.01
1000
0.001
1000
10
100
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Reverse Transfer Admittance
versus Frequency
Figure 7. Output Admittance versus
Frequency
5
bos, OUTPUT SUSCEPTANCE (mmhos)
1
gos, OUTPUT CONDUCTANCE (mmhos)
f, FREQUENCY (MHz)
0.001
1.0
Crss, REVERSE TRANSFER
CAPACITANCE (pF)
Ciss, INPUT CAPACITANCE (pF)
100
0.1
–brs, REVERSE SUSCEPTANCE (mmhos)
–grs, REVERSE TRANSCONDUCTANCE (mmhos)
10
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
100
–bfs, FORWARD SUSCEPTANCE (mmhos)
10
bis, INPUT SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
BF256A
VDS = 20 Vdc
f = 1 MHz
4
3
2
1
0
0.5
VDS = 20 Vdc
f = 1 MHz
0
0
1
2
3
4
5
6
7
8
9
0
10
2
4
6
8
–VGS, GATE–SOURCE VOLTAGE (VOLTS)
–VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 8. Input Capacitance versus
Gate–Source Voltage
Figure 9. Reverse Transfer Capacitance
versus Gate–Source Voltage
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3
10
BF256A
PACKAGE DIMENSIONS
TO–92 (TO–226)
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
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4
BF256A/D