ON Semiconductor 2N5460 2N5461 2N5462 2 DRAIN JFET Amplifiers P–Channel — Depletion 3 GATE 1 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain–Gate Voltage Rating VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Junction Temperature Range TJ –65 to +135 °C Storage Channel Temperature Range Tstg –65 to +150 °C 1 2 3 CASE 29–11, STYLE 7 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS 40 — — Vdc 2N5460, 2N5461, 2N5462 — — 5.0 nAdc 2N5460, 2N5461, 2N5462 — — 1.0 µAdc 0.75 1.0 1.8 — — — 6.0 7.5 9.0 Vdc 0.5 0.8 1.5 — — — 4.0 4.5 6.0 OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100°C) (VGS = 30 Vdc, VDS = 0, TA = 100°C) Gate–Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc) Gate–Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) 2N5460, 2N5461, 2N5462 IGSS 2N5460 2N5461 2N5462 VGS(off) VGS 2N5460 2N5461 2N5462 Vdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS –1.0 –2.0 –4.0 — — — –5.0 –9.0 –16 mAdc 2N5460 2N5461 2N5462 yfs 1000 1500 2000 — — — 4000 5000 6000 mhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos — — 75 mhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.0 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 1.0 2.0 pF Noise Figure (VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz) NF — 1.0 2.5 dB Equivalent Short–Circuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) en — 60 115 nV Hz SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) FUNCTIONAL CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 2 1 Publication Order Number: 2N5460/D 2N5460 2N5461 2N5462 4.0 VDS = 15 V 3.5 I D, DRAIN CURRENT (mA) FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT 3.0 2.5 TA = -55°C 2.0 25°C 1.5 125°C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 1.8 2.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) DRAIN CURRENT versus GATE SOURCE VOLTAGE 4000 3000 2000 1000 700 500 VDS = 15 V f = 1.0 kHz 300 200 0.2 0.3 10 I D, DRAIN CURRENT (mA) VDS = 15 V 8.0 7.0 TA = -55°C 6.0 25°C 125°C 5.0 4.0 3.0 2.0 1.0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3.5 4.0 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 12 TA = -55°C 10 8.0 25°C 125°C 6.0 4.0 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 7.0 10000 VDS = 15 V 14 1.0 Figure 5. VGS(off) = 4.0 Volts 7.0 Yfs FORWARD TRANSFER ADMITTANCE ( mhos) 16 I D, DRAIN CURRENT (mA) 4.0 7000 Figure 2. VGS(off) = 4.0 Volts 0 3.0 10000 9.0 0 2.0 Figure 4. VGS(off) = 2.0 Volts Yfs FORWARD TRANSFER ADMITTANCE ( mhos) Figure 1. VGS(off) = 2.0 Volts 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) 8.0 7000 5000 3000 2000 1000 VDS = 15 V f = 1.0 kHz 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 Figure 6. VGS(off) = 5.0 Volts Figure 3. VGS(off) = 5.0 Volts http://onsemi.com 2 7.0 10 2N5460 2N5461 2N5462 10 VDS = 15 V f = 1.0 kHz 8.0 300 200 IDSS = 3.0 mA 100 70 50 6.0 mA 10 mA 30 7.0 6.0 Ciss 5.0 4.0 3.0 2.0 20 10 0.1 f = 1.0 MHz VGS = 0 9.0 C, CAPACITANCE (pF) r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 Coss 1.0 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 0.2 5.0 0 10 Crss 0 Figure 7. Output Resistance versus Drain Current 40 Figure 8. Capacitance versus Drain–Source Voltage 5.0 10 VDS = 15 V VGS = 0 RG = 1.0 Megohm 4.0 3.0 2.0 9.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1.0 VDS = 15 V VGS = 0 f = 100 Hz 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 10 20 30 50 100 200 300 500 1000 2000 3000 f, FREQUENCY (Hz) 0 1.0 10,000 Figure 9. Noise Figure versus Frequency vi 10 100 1000 RS, SOURCE RESISTANCE (k Ohms) Figure 10. Noise Figure versus Source Resistance COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz Crss Ciss 10,000 ross Coss | yfs | vi yis = jω Ciss yos = jω Cosp * + 1/ross yfs = yfs | yrs = -jω Crss *Cosp is Coss in parallel with Series Combination of Ciss and Crss. NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Figure 11. Equivalent Low Frequency Circuit http://onsemi.com 3 2N5460 2N5461 2N5462 PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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