MMBFU310LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 3 GATE 1 DRAIN Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 3 SOT−23 (TO−236AB) CASE 318−08 STYLE 10 1 PD 225 mW 1.8 mW/°C RJA 556 °C/W TJ, Tstg −55 to +150 °C 2 MARKING DIAGRAM 1. FR−5 = 1.0 0.75 0.062 in. 6C M 1 6C M = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device MMBFU310LT1 MMBFU310LT1G Package Shipping† SOT−23 3000 Tape & Reel SOT−23 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 April, 2005 − Rev. 3 1 Publication Order Number: MMBFU310LT1/D MMBFU310LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)GSS −25 − Vdc Gate 1 Leakage Current − (VGS = −15 Vdc, VDS = 0) IG1SS − −150 pA Gate 2 Leakage Current − (VGS = −15 Vdc, VDS = 0, TA = 125°C) IG2SS − −150 nAdc VGS(off) −2.5 −6.0 Vdc IDSS 24 60 mAdc VGS(f) − 1.0 Vdc Forward Transfer Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |Yfs| 10 18 mmhos Output Admittance − (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |yos| − 250 mhos Input Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Ciss − 5.0 pF Reverse Transfer Capacitance − (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Crss − 2.5 pF Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage − (IG = −1.0 Adc, VDS = 0) Gate Source Cutoff Voltage − (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current − (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage − (IG = 10 mAdc, VDS = 0) 60 I D , DRAIN CURRENT (mA) 60 VDS = 10 V TA = −55°C 50 40 +25 °C IDSS +25 °C 40 30 20 10 −5.0 50 30 +150°C 20 +25 °C −55 °C 10 +150°C −1.0 −4.0 −3.0 −2.0 ID − VGS, GATE−SOURCE VOLTAGE (VOLTS) IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS) 0 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 0 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) SMALL−SIGNAL CHARACTERISTICS 35 30 TA = −55°C VDS = 10 V f = 1.0 MHz +25 °C 25 20 +150°C 15 +25 °C −55 °C 10 +150°C 5.0 0 5.0 4.0 3.0 2.0 1.0 VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics vs Gate−Source Voltage Figure 2. Forward Transconductance vs Gate−Source Voltage http://onsemi.com 2 0 10 1.0 k 10 k 100 VGS(off) = −2.3 V = VGS(off) = −5.7 V = 1.0 k Yos 10 RDS CAPACITANCE (pF) Yfs Yfs 120 96 7.0 72 Cgs 4.0 48 24 Cgd 1.0 0 10 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 100 0.01 9.0 8.0 ID, DRAIN CURRENT (mA) 0 0 1.0 |S21|, |S11| |S12|, |S22| 0.85 0.45 0.060 1.00 2.4 0.79 0.39 1.8 Y21 1.2 0.048 0.98 6.0 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25°C 0.67 0.27 0.024 0.94 0.61 0.21 0.6 0.012 0.92 S12 Y12 200 300 500 f, FREQUENCY (MHz) 0.036 0.96 S11 Y22 700 0.55 0.15 100 1000 Figure 5. Common−Gate Y Parameter Magnitude vs Frequency 21, 11 180° 50° 200 300 500 f, FREQUENCY (MHz) 11, 12 −20 ° 120° 21, 22 −40 ° 86° −40 ° 100° 85° −60 ° 80° −120 ° 84° −80 ° 60° 0 11 −20 ° 21 0.90 700 1000 Figure 6. Common−Gate S Parameter Magnitude vs Frequency 12, 22 −2 0° 87° 22 30° 2.0 3.0 Y12 (mmhos) |Y11|, |Y21 |, |Y22 | (mmhos) Y11 12 160° 3.0 S21 18 40° 4.0 S22 VDS = 10 V ID = 10 mA TA = 25°C 170° 5.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 30 0 100 6.0 Figure 4. On Resistance and Junction Capacitance vs Gate−Source Voltage Figure 3. Common−Source Output Admittance and Forward Transconductance vs Drain Current 24 7.0 21 −20 ° 22 −60 ° −80 ° −40 ° −100 ° 150° 20° 12 11 140° 130° 10° 0° 100 −140 ° VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) −60 ° 12 −160 ° 83° −100 ° 40° −180 ° 700 21 −200 ° 82° 1000 −120 ° 20° 100 Figure 7. Common−Gate Y Parameter Phase−Angle vs Frequency VDS = 10 V ID = 10 mA TA = 25°C 200 300 500 f, FREQUENCY (MHz) 11 700 −80 ° −100 ° 1000 Figure 8. S Parameter Phase−Angle vs Frequency http://onsemi.com 3 R DS , ON RESISTANCE (OHMS) 100 k Yos, OUTPUT ADMITTANCE (µ mhos) Yfs , FORWARD TRANSCONDUCTANCE (µmhos) MMBFU310LT1 MMBFU310LT1 PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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