CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process. The circuit is manufactured with a pHemt process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Feature 24 dBS21 20 Broadband performance 5.5-23GHz 21dBm output power (Psat) 19dB gain, ± 1dB gain flatness Typical PAE:11%@P-1dB Chip size : 1.33 x 0.910x 0.1mm 16 Gain Rlosses & NF ( dB ) 12 8 NF 4 0 -4 -8 dBS11 -12 dBS22 -16 -20 -24 2 4 6 8 10 12 14 16 18 20 22 24 Frequency ( GHz ) Typical On wafer measurements Main Characteristics Tamb = +25°C Symbol Fop G Pout Parameter Operating frequency range Small signal gain Output power, Pin=0dBm Min Typ 5.5 Max Unit 23 GHz 18 19 dB +18 +20 dBm Id_small_signal Bias current 160 210 mA ESD Protection : Electrostatic discharge sensitive device observe handling precautions ! Ref : DSCHA3063-8144 - 23 May 08 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 5.5-23GHz Driver Amplifier CHA3063 Electrical Characteristics on wafer Tamb = +25°C, Vd1=Vd2=4V Vg tuned for Id=160mA (around –0.27V) Symbol Fop G ∆G Is Parameter Min Operating frequency range 5.5 Small signal gain (5.5-6GHz) 17 Small signal gain (6-23GHz) 18 Typ Max Unit 23 GHz dB Small signal gain flatness 19 dB ±1.0 dB 35 dB Reverse isolation P1dB CW output power at 1dB compression (1) +16 +18 dBm Pout Output Power (Pin=0dBm) +18 +20 dBm OIP3 Output 3rd order intercept point (2) 28 dBm RL_IN Input Return Loss (3) -15 -7 dB Output Return Loss (3) -15 -7 dB Noise figure 4.5 6 dB Id_small signal Bias current 160 210 mA RL_OUT NF (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement (3) RL_IN, RL_OUT < 6dB from 5.5GHz to 7GHz Absolute Maximum Ratings (1) Tamb. = 25°C Symbol Parameter Values Unit Vds Drain bias voltage_small signal 5.0 V Ids Drain bias current_small signal 210 mA Vg Gate bias voltage -2 to +0.4 V Ig Gate bias current 0.7 mA Vgd Maximum negative gate drain Voltage (Vg-Vd) -5 V Pin Maximum continuous input power Maximum peak input power overdrive (2) +1 +15 dBm dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref : DSCHA3063-8144 - 23 May 08 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.5-23GHz Driver Amplifier CHA3063 Typical Scattering Parameters ( On wafer Sij measurements) Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25°C. FREQ GHz 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 11,0 12,0 13,0 14,0 15,0 16,0 17,0 18,0 19,0 20,0 21,0 22,0 23,0 24,0 25,0 26,0 27,0 28,0 29,0 30,0 S11 dB -0,3 -0,7 -3,4 -5,7 -7,9 -9,0 -11,3 -13,5 -14,3 -14,0 -13,2 -13,2 -15,3 -16,7 -21,2 -18,6 -19,8 -18,8 -20,8 -19,8 -15,4 -14,2 -11,5 -11,6 -3,9 -2,0 -1,3 -1,3 -1,3 -1,2 S11 /° -35,6 -75,6 -113,7 -140,7 -170,3 162,5 121,8 82,5 39,7 0,9 -34,0 -62,6 -95,8 -125,2 -125,5 -140,0 -124,7 -172,0 101,6 23,1 -14,7 -34,2 -43,5 -30,9 -46,7 -74,8 -99,2 -115,8 -128,4 -140,1 S12 dB -60,9 -63,1 -54,5 -53,1 -43,5 -44,2 -41,0 -38,7 -37,6 -37,1 -36,7 -35,6 -36,0 -35,0 -34,7 -36,4 -36,4 -38,5 -37,4 -35,2 -34,0 -33,8 -35,3 -33,1 -34,9 -35,3 -39,7 -33,9 -32,3 -28,7 Ref : DSCHA3063-8144 - 23 May 08 S12 /° 84,0 142,8 -53,2 138,2 67,4 34,7 13,6 -16,7 -39,6 -61,4 -82,9 -107,7 -126,6 -148,4 -175,9 170,4 137,3 135,9 154,6 125,8 101,5 71,7 46,5 -0,4 -86,0 -172,0 157,6 138,6 128,4 96,4 S21 dB -12,7 -13,7 11,6 15,2 16,4 18,8 19,3 18,9 19,1 19,3 19,5 19,6 19,5 19,2 18,5 18,2 18,1 18,1 18,0 18,0 18,2 18,9 19,5 20,4 17,6 10,9 3,9 -3,5 -12,1 -21,0 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S21 /° 86,9 -179,2 123,1 58,5 19,0 -12,3 -46,9 -75,2 -100,4 -125,2 -150,7 -175,1 159,3 133,1 111,1 89,1 70,4 44,3 22,0 -2,5 -26,4 -57,7 -89,3 -144,0 153,9 104,5 69,9 44,6 29,3 47,7 S22 dB -0,6 -1,4 -4,7 -6,2 -7,4 -11,1 -12,0 -11,6 -12,9 -14,4 -13,7 -13,5 -11,9 -11,9 -13,1 -14,7 -19,5 -17,4 -18,5 -19,4 -23,3 -21,4 -16,9 -6,3 -3,1 -3,2 -4,3 -4,7 -5,0 -5,9 Specifications subject to change without notice S22 /° -35,0 -67,7 -93,2 -111,6 -133,3 -149,1 -155,1 -173,2 171,7 165,8 164,9 148,9 131,3 116,0 95,0 79,9 72,4 72,2 57,4 47,4 32,5 76,8 77,6 46,6 -13,3 -59,0 -90,9 -113,7 -133,9 -153,6 5.5-23GHz Driver Amplifier CHA3063 Typical ON JIG Measurements (deembedded) Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25°C GAIN & ReturnLosses MEASUREMENTS IN TEST JIG 25 S21 19 Gain/ReturnLosses (dB) 13 7 1 -5 S22 -11 -17 S11 -23 -29 -35 1 3 5 7 9 11 13 15 17 19 21 23 27 25 Frequency (GHz) POWER MEASUREMENTS IN TEST JIG (deembedded) 30 25 Linear Gain 20 Psat (Glin-3dB) 20 15 P-1dB 15 10 PAE @ 1 db compression 10 5 5 0 0 -5 4 6 8 Ref : DSCHA3063-8144 - 23 May 08 10 12 14 16 Frequency (GHz) 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18 20 22 24 Specifications subject to change without notice Gain (dB) Output Power (dBm) / PAE (%) 25 5.5-23GHz Driver Amplifier CHA3063 Typical ON JIG Power Measurements (deembedded) Bias Conditions : Vd1,2= 4V, Vg = -0.27V, Id = 160 mA, Ta=+25°C Frequency : 6 GHz 25 500 20 400 350 Gain 15 300 250 10 Id (mA) Pout (dBm) / Gain (dB) / PAE (%) 450 200 Pout 150 Id 5 100 PAE 50 0 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) Frequency : 20GHz 25 500 20 400 350 Gain 15 300 250 10 200 Pout 150 Id 5 100 50 PAE 0 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) Ref : DSCHA3063-8144 - 23 May 08 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice Id (mA) Pout (dBm) / Gain (dB) / PAE (%) 450 5.5-23GHz Driver Amplifier CHA3063 Vd=4V Id=160mA @ 23GHz ∆ f=10MHz 35 OIP3 # 28.5dBm 30 75 25 20 65 Fundamental 10 55 3rd order 5 IM3 0 45 -5 -10 35 -15 H3 -20 H1 -25 F2 + ( F2-F1 ) Df=10MHz -30 F2 Df=10MHz -35 IM3 IM3 (dBm) Output power (dBm) 15 25 15 -40 5 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Input power (dBm) 4 6 8 10 12 14 Typical ON JIG Noise Figure Measurements Noise Figure versus Temperature 6,5 6 Noise Figure (dB) 5,5 5 4,5 85°C 25°C -40°C 4 3,5 3 2,5 2 5 7 9 11 13 15 17 19 21 23 Frequency (GHz) Ref : DSCHA3063-8144 - 23 May 08 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.5-23GHz Driver Amplifier CHA3063 Chip Assembly and Mechanical Data To Vd1,2 drain supply feed To Vg gate supply feed Note :Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Chip Mechanical Data and Pin references. ( Chip thickness : 100µm. All dimensions are in micrometers) Ref : DSCHA3063-8144 - 23 May 08 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 5.5-23GHz Driver Amplifier CHA3063 Ordering Information Chip form : CHA3063-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref : DSCHA3063-8144 - 23 May 08 8/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09