CHA5292a 37-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5292a is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. Vd2 Vd3 Vd4 IN OUT Vg1 The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg2 Vg3 Vg4 Typical on jig Measurements 24 20 16 12 Main Features 8 4 ■ Performances : 37-40GHz ■ 24dBm output power @ 1dB comp. gain ■ 24 dB ± 1dB gain ■ DC power consumption, 500mA @ 3.5V ■ Chip size : 3.43 x 1.44 x 0.07 mm 0 -4 -8 -12 -16 S21 (dB) S11 (dB) S22 (dB) -20 30 31 32 33 34 35 36 Frequency (GHz) 37 38 39 Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 37 40 GHz G Small signal gain 24 dB P1dB Output power at 1dB gain compression 24 dBm Id Bias current 500 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52922149 - 29-May-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 40 37-40GHz Medium Power Amplifier CHA5292a Electrical Characteristics Tamb = +25°C, Vd = 3.5V Id =500mA Symbol Fop Parameter Min Operating frequency range (1) G ∆G Is P1dB P03 VSWRin Typ 37 Max Unit 40 GHz Small signal gain (1) 24 dB Small signal gain flatness (1) ±1 dB Reverse isolation 35 dB Pulsed output power at 1dB compression (1) 24 dBm Output power at 3dB gain compression (1) 26 dBm Input VSWR (2) 3:1 VSWRout Output VSWR (2) 3.5:1 Tj Junction temperature for 80°C backside 160 Id Bias current @ small signal 500 °C 650 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum Drain bias voltage with Pin max=0dBm +4.0 V Id Drain bias current 750 mA Vg Gate bias voltage -2 to +0.4 V Ig Gate bias current -1.8 to +1.8 mA Vdg Maximum drain to gate voltage (Vd - Vg) +6.0 V Pin Maximum input power overdrive (2) +3.0 dBm Tch Maximum channel temperature +175 °C Ta Operating temperature range -40 to +80 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52922149 - 29-May-02 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 37-40GHz Medium Power Amplifier CHA5292a Typical on Jig Measurements Bias conditions: Vd=3.5V, Vg tuned for Id = 500mA 24 20 16 12 8 4 0 -4 -8 -12 -16 S21 (dB) S11 (dB) S22 (dB) -20 30 31 32 33 34 35 36 Frequency (GHz) 37 38 39 40 Linear Gain & Return Losses versus frequency (including 1dB losses) 25 30 24 29 23 28 22 27 21 26 20 25 19 24 18 23 17 22 P-1dB-400mA Linear Gain -400mA 16 P-1dB-500mA Linear Gain-500mA 21 15 20 35 36 37 38 Frequence (GHz) 39 40 Linear Gain & Output power at 1dB compression versus frequency Ref. : DSCHA52922149 - 29-May-02 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 37-40GHz Medium Power Amplifier CHA5292a 62 3.5V, 400mA 58 54 C/I3 (dBc) 50 46 42 37GHz 38GHz 39GHz 40GHz 38 IP3 (dBm) 34 30 0 2 4 6 8 10 12 14 16 Pout (dBm) 62 3.5V, 500mA 58 C/I3 (dBc) 54 50 46 37GHz 42 38GHz 39GHz 40GHz 38 IP3 (dBm) 34 30 0 2 4 6 8 10 12 14 Pout (dBm) C/I3 versus total output power (∆F =10MHz) Ref. : DSCHA52922149 - 29-May-02 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 16 37-40GHz Medium Power Amplifier CHA5292a Chip Assembly and Mechanical Data To Vd3,4 DC Drain Supply To Vd1,2 DC Drain Supply 10nF 120pF 10nF 120pF 120pF 120pF IN OUT 120pF 120pF 120pF 120pF 10nF To Vg1,2,3,4 DC Gate Supply Feed Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 70µm. All dimensions are in micrometers ) Ref. : DSCHA52922149 - 29-May-02 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 37-40GHz Medium Power Amplifier CHA5292a Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 70µm thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5292a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52922149 - 29-May-02 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice