CHA5290 17.7-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA5290 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd2 Vg1,2 ■ Performances : 17.7 -24GHz ■ 26dBm output power @ 1dB comp. gain ■ 26 dB ± 1dB gain ■ DC power consumption, 400mA @ 6V ■ Chip size : 3.43 x 1.57 x 0.05 mm Vd4 Vg3 34 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 Main Features Vd3 Vg4 S11 (dB) 14 16 18 20 22 Vd4 S21 (dB) 24 26 28 S22 (dB) 30 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 17.7 24 GHz G Small signal gain 26 dB P1dB Output power at 1dB gain compression 26 dBm Id Bias current 400 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. DSCHA52902295 -22-Oct.-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 32 34 18-24GHz Medium Power Amplifier CHA5290 Electrical Characteristics Tamb = +25°C, Vd = 6V Id =400mA Symbol Fop Parameter Min Operating frequency range (1) G 17.7 Small signal gain (1) ∆G Is P1dB Typ 24 Max Unit 24 GHz 26 dB Small signal gain flatness (1) ±1 dB Reverse isolation 40 dB 26 dBm Pulsed output power at 1dB compression (1) 25 P03 Output power at 3dB gain compression (1) 27 dBm PAE Power added efficiency at 1dB comp. 18 % Input VSWR (2) 3:1 VSWRin VSWRout Output VSWR (2) 3:1 Tj Junction temperature for 80°C backside 165 Id Bias current @ small signal 400 °C 500 mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage with Pin max=-2dBm 6.25 V Id Maximum drain bias current 625 mA Vg Gate bias voltage -2.5 to +0.4 V Ig Gate bias current -2.5 to +2.5 mA Vgd Minimum negative gate drain voltage ( Vg - Vd) -8 V Pin Maximum input power overdrive (2) 3 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +80 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. DSCHA52902295 -22-Oct.-02 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-24GHz Medium Power Amplifier CHA5290 Typical on Jig Measurements Bias conditions: Vd=6V, Vg tuned for Id = 400mA Linear Gain & Return Losses versus frequency 34 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 S11 (dB) 14 16 18 20 22 S21 (dB) 24 26 S22 (dB) 28 30 32 34 Frequency (GHz) Linear Gain, Output power & associated PAE at 1dB compression versus frequency 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 P-1dB (dBm) 16 17 18 Linear Gain (dB) 19 20 21 PAE@ 1dB comp. 22 23 24 Frequency (GHz) Ref. DSCHA52902295 -22-Oct.-02 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 25 18-24GHz Medium Power Amplifier CHA5290 C/I3 versus total output power (∆F =10MHz) 52 50 48 46 C/I3 (dBc) 44 42 40 38 36 34 32 30 17.5GHz 21.5GHz 28 19.5GHz 23.6GHz 26 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pout (dBm) Ref. DSCHA52902295 -22-Oct.-02 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 22 18-24GHz Medium Power Amplifier CHA5290 Chip Assembly and Mechanical Data To Vd4 DC Drain supply feed To Vd1,2,3 DC Drain supply feed 10nF 120pF 10nF 120pF 120pF 120pF 120pF 120pF 120pF 120pF 10nF To Vg1,2,3,4 DC Gate supply Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. DSCHA52902295 -22-Oct.-02 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 18-24GHz Medium Power Amplifier CHA5290 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 50µm thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5290-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA52902295 -22-Oct.-02 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice