PD - 97069
IRF7853PbF
HEXFET® Power MOSFET
Applications
Primary Side Switch in Bridge Topology
VDSS
RDS(on) max
ID
in Universal Input (36-75Vin) Isolated
100V 18m:@VGS = 10V 8.3A
DC-DC Converters
l Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
A
Converters
A
1
8
D
S
l Secondary Side Synchronous
2
7
Rectification Switch for 15Vout
S
D
l Suitable for 48V Non-Isolated
3
6
S
D
Synchronous Buck DC-DC Applications
4
5
G
D
Benefits
l Low Gate to Drain Charge to Reduce
SO-8
Top View
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
l
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
100
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
8.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
6.6
IDM
Pulsed Drain Current
66
PD @TA = 25°C
Maximum Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
5.1
-55 to + 150
V/ns
°C
c
h
dv/dt
TJ
Peak Diode Recovery dv/dt
TSTG
Storage Temperature Range
Operating Junction and
A
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient (PCB Mount)
ei
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes through are on page 8
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1
1/5/06
IRF7853PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
14.4
18
mΩ
VGS(th)
Gate Threshold Voltage
3.0
–––
4.9
V
VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 100V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = 10V, ID = 8.3A
f
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
11
–––
–––
Qg
Total Gate Charge
–––
28
39
Qgs
Gate-to-Source Charge
–––
7.8
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
10
–––
Conditions
S
VDS = 25V, ID = 5.0A
nC
VDS = 50V
ID = 5.0A
VGS = 10V
Ω
f
RG
Gate Resistance
–––
1.4
td(on)
Turn-On Delay Time
–––
13
–––
VDD = 50V
tr
Rise Time
–––
6.6
–––
ID = 5.0A
td(off)
Turn-Off Delay Time
–––
26
–––
tf
Fall Time
–––
6.0
–––
VGS = 10V
Ciss
Input Capacitance
–––
1640
–––
VGS = 0V
Coss
Output Capacitance
–––
310
–––
Crss
Reverse Transfer Capacitance
–––
71
–––
Coss
Output Capacitance
–––
1600
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
180
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
320
–––
VGS = 0V, VDS = 0V to 80V
–––
ns
RG = 6.2Ω
f
VDS = 25V
pF
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
610
Units
mJ
–––
5.0
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
2.3
ISM
(Body Diode)
Pulsed Source Current
–––
–––
66
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 5.0A, VGS = 0V
trr
Reverse Recovery Time
–––
45
68
ns
Qrr
Reverse Recovery Charge
–––
84
130
nC
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
D
G
S
f
TJ = 25°C, IF = 5.0A, VDD = 25V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7853PbF
100
100
10
BOTTOM
TOP
1
0.1
0.01
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
0.1
1
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
BOTTOM
4.5V
1
≤ 60µs PULSE WIDTH
Tj = 150°C
0.1
0.01
10
100
0.1
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
100
2.5
RDS(on) , Drain-to-Source On Resistance
TJ = 150°C
10.0
(Normalized)
ID, Drain-to-Source Current(Α)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TJ = 25°C
1.0
VDS = 25V
≤ 60µs PULSE WIDTH
0.1
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7.0
ID = 8.3A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7853PbF
100000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
10000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
1000
Coss
Crss
100
ID= 5.0A
VDS= 50V
VDS= 20V
12
8
4
0
10
1
10
0
100
20
100.0
ID, Drain-to-Source Current (A)
1000
TJ = 150°C
10.0
1.0
30
40
50
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
10
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 80V
16
1.2
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7853PbF
10
RD
VDS
VGS
ID , Drain Current (A)
8
D.U.T.
RG
+
-VDD
6
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
90%
0
25
50
75
100
125
150
TC , CaseTemperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJA )
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
τJ
0.1
R1
R1
τJ
τ1
R2
R2
τ2
τ1
R3
R3
τ3
τ2
τAC
τ
Ri (°C/W) τi (sec)
7.016
0.00474
τ3
Ci= τi/Ri
Ci τi/Ri
0.01
26.95
0.04705
16.04
2.3619
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS (on), Drain-to -Source On Resistance (mΩ)
IRF7853PbF
RDS (on) , Drain-to-Source On Resistance (mΩ)
40
VGS = 10V
TC = 125°C
30
20
TC = 25°C
10
40
ID = 5.0A
35
30
25
20
10
10
20
30
40
50
60
70
Fig 12. On-Resistance vs. Drain Current
DUT
0
VCC
QGS
QGD
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
L
VDS
D.U.T
RG
IAS
20V
tp
12
14
16
2500
VG
Charge
tp
10
QG
VGS
1K
8
Fig 13. On-Resistance vs. Gate Voltage
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
EAS, Single Pulse Avalanche Energy (mJ)
L
6
VGS, Gate-to-Source Voltage (V)
ID , Drain Current (A)
6
TJ = 25°C
15
4
0
I AS
TJ = 125°C
ID
0.23A
0.34A
BOTTOM 5.0A
TOP
2000
1500
1000
500
0
A
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7853PbF
SO-8 Package Details
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
.0098
0.10
0.25
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
8X b
0.25 [.010]
A
MAX
b
e1
6X
MILLIMET ERS
MAX
A
5
INCHES
MIN
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
NOTES :
1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS THE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7853PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 49mH,
RG = 25Ω, IAS = 5.0A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/06
8
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