IRF IRF7492TRPBF

PD - 95287A
IRF7492PbF
HEXFET® Power MOSFET
VDSS
Applications
l High frequency DC-DC converters
l Lead-Free
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
200V
RDS(on) max
79mW@VGS = 10V
ID
3.7A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
dv/dt
TJ
TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
200
± 20
3.7
3.0
30
2.5
0.02
9.5
-55 to + 150
V
V
A
W
W/°C
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes  through † are on page 8
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1
02/23/07
IRF7492PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
BV(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
2.5
–––
–––
–––
–––
Typ.
–––
0.20
64
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA ƒ
79
mΩ VGS = 10V, ID = 2.2A ƒ
–––
V
VDS = VGS, ID = 250µA
10
VDS = 160V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
7.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
39
9.2
15
15
13
27
14
1820
190
94
780
89
150
Max. Units
Conditions
–––
S
VDS = 50V, ID = 3.7A
59
ID = 2.2A
–––
nC
VDS = 100V
–––
VGS = 10V
–––
VDD = 100V
–––
ID = 2.2A
ns
–––
RG = 6.5Ω
–––
VGS = 10V ƒ
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 160V …
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
130
4.4
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.3
A
–––
–––
30
–––
–––
–––
–––
69
200
1.3
100
310
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V
TJ = 25°C, IF = 2.2A
di/dt = 100A/µs ƒ
D
S
ƒ
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IRF7492PbF
100
10
BOTTOM
1
0.1
100
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
5.5V
0.01
10
BOTTOM
5.5V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
0.1
1
10
100
1000
0.1
1
VDS, Drain-to-Source Voltage (V)
RDS(on), Drain-to-Source On Resistance
(Normalized)
3.0
T J = 150°C
T J = 25°C
1.00
VDS = 50V
20µs PULSE WIDTH
0.10
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
1000
Fig 2. Typical Output Characteristics
100.00
10.00
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (Α)
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
8.0
I D = 3.7A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
Tj, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7492PbF
100000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Ciss
1000
Coss
Crss
100
ID= 2.2A
10
VDS= 40V
8
6
4
2
0
10
1
10
100
1000
0
VDS, Drain-to-Source Voltage (V)
100
ID , Drain-to-Source Current (A)
10
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
0.1
0.2
0.4
0.6
0.8
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
I SD , Reverse Drain Current (A)
10
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
VDS= 160V
VDS= 100V
1.0
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7492PbF
4.0
RD
VDS
VGS
ID , Drain Current (A)
3.0
D.U.T.
RG
+
-V DD
10V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
10
0.20
Thermal Response
0.10
0.05
P DM
0.02
1
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
0.1
1
t1/ t 2
J = P DM x Z thJA
10
+T A
100
1000
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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RDS(on) , Drain-to -Source On Resistance (mΩ)
IRF7492PbF
RDS (on) , Drain-to-Source On Resistance (m Ω )
100
90
80
VGS = 10V
70
60
50
40
0
5
10
15
20
25
500
400
300
200
ID = 3.7A
100
0
5
30
6
7
8
9
10
11
12
13
14
15
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
12V
.2µF
QGS
.3µF
D.U.T.
QGD
300
+
V
- DS
VG
TOP
VGS
3mA
250
Charge
ID
EAS , Single Pulse Avalanche Energy (mJ)
IG
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
BOTTOM
ID
2.0A
3.5A
4.4A
200
150
100
50
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
( ° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7492PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
MILLIMETERS
MIN
A
E
INCHES
DIM
B
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7492PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ When mounted on 1 inch square copper board.
… Coss eff. is a fixed capacitance that gives the same charging time
‚ Starting TJ = 25°C, L = 14mH
as Coss while VDS is rising from 0 to 80% VDSS.
RG = 25Ω, IAS = 4.4A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
† ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2007
8
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