IRF IRF7494

FOR REVIEW ONLY
PD
PD- -94641
TBD
IRF7494
HEXFET® Power MOSFET
VDSS
Applications
High frequency DC-DC converters
l
RDS(on) max
44m:@VGS = 10V
150V
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
5.2A
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
ID
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
150
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.2
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
3.7
c
A
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
3.0
W
Linear Derating Factor
0.02
W/°C
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
3.0
-55 to + 175
150
V/ns
°C
TSTG
Storage Temperature Range
42
h
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
e
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes  through † are on page 8
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1
01/28/03
03/11/03
IRF7494
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.15
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
35
44
mΩ
VGS(th)
Gate Threshold Voltage
2.5
–––
4.5
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 120V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
V
VGS = 0V, ID = 250µA
VGS = 10V, ID = 3.1A
f
VDS = 120V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
–––
–––
S
Conditions
gfs
Qg
Forward Transconductance
12
VDS = 50V, ID = 5.2A
Total Gate Charge
–––
36
54
Qgs
Gate-to-Source Charge
–––
7.5
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
13
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
15
–––
VDD = 100V
75V
tr
Rise Time
–––
13
–––
td(off)
Turn-Off Delay Time
–––
36
–––
tf
Fall Time
–––
14
–––
Ciss
Input Capacitance
–––
1750
–––
VGS = 0V
Coss
Output Capacitance
–––
220
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
100
–––
Coss
Output Capacitance
–––
870
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
120
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
170
–––
VGS = 0V, VDS = 0V to 120V
ID = 3.1A
nC
VDS = 75V
f
ID = 3.1A
ns
RG = 6.5Ω
VGS = 10V
pF
f
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
Max.
Units
–––
370
mJ
–––
3.1
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
2.7
ISM
(Body Diode)
Pulsed Source Current
–––
–––
42
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 3.1A, VGS = 0V
trr
Reverse Recovery Time
–––
55
–––
ns
Qrr
Reverse Recovery Charge
–––
140
–––
nC
ton
Forward Turn-On Time
2
c
MOSFET symbol
A
D
G
S
f
TJ = 25°C, IF = 3.1A, VDD = 25V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7494
100
100
10
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
4.5V
0.1
BOTTOM
10
4.5V
1
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
0.1
1
10
100
1000
0.1
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
TJ = 175°C
10
T J = 25°C
1
VDS = 50V
20µs PULSE WIDTH
ID = 5.2A
2.5
VGS = 10V
2.0
(Normalized)
RDS(on) , Drain-to-Source On Resistance
100
ID, Drain-to-Source Current (Α)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1.5
1.0
0.5
0.0
0.1
4
5
6
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7494
100000
VGS , Gate-to-Source Voltage (V)
ID= 3.1A
Coss = Cds + Cgd
10000
C, Capacitance(pF)
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Ciss
1000
Coss
Crss
100
VDS= 120V
VDS= 75V
10.0
VDS= 30V
8.0
6.0
4.0
2.0
0.0
10
1
10
100
0
1000
VDS, Drain-to-Source Voltage (V)
15
20
25
30
35
40
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100.00
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 175°C
10.00
T J = 25°C
1.00
10
100µsec
1
1msec
T A = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.10
10msec
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
5
1.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7494
6
RD
VDS
ID, Drain Current (A)
5
VGS
D.U.T.
RG
4
+
-V DD
10V
3
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2
Fig 10a. Switching Time Test Circuit
1
VDS
90%
0
25
50
75
100
125
150
175
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
PDM
t1
SINGLE PULSE
( THERMAL RESPONSE )
0.1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
RDS(on) , Drain-to -Source On Resistance (m Ω)
RDS (on) , Drain-to-Source On Resistance (m Ω)
IRF7494
50
45
VGS = 10V
40
35
30
0
5
10
15
20
25
30
35
40
800
700
600
500
400
ID = 5.2A
300
200
100
0
45
4
6
8
10
12
14
16
18
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
VG
1000
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
ID
TOP
1.3A
2.6A
BOTTOM 3.1A
800
600
400
200
0
A
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7494
SO-8 Package Details
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7
IRF7494
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 77mH
RG = 25Ω, IAS = 3.1A.
ƒ When mounted on 1 inch square copper
board, t ≤ 10 sec.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† ISD ≤ 3.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/03
8
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