Advance Product Information September 2, 2005 Wideband LNA with AGC TGA2513-EPU Key Features • • • • • • • • Primary Applications • Wideband Gain Block / LNA • X-Ku Point to Point Radio • IF & LO Buffer Applications Product Description Vd = 5V, Id= 75mA, Vg2 = 2V, Typical Vg1 = -60mV 20 30 16 24 12 18 Gain 8 12 4 6 0 0 Output -4 -6 -8 The TGA2513-EPU is 100% DC and RF tested on-wafer to ensure performance compliance. -12 -12 -18 Input -16 -24 0 3 6 9 12 15 18 21 24 27 30 Frequency (GHz) 9 8 7 6 NF (dB) The TGA2513-EPU is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. Return Loss (dB) The TGA2513-EPU provides a nominal 16 dBm of output power at 1 dB gain compression with a small signal gain of 17 dB. Typical noise figure is < 3 dB from 2-18 GHz. Measured Fixtured Data Gain (dB) The TriQuint TGA2513-EPU is a compact LNA/Gain Block MMIC with AGC via the control gate. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process. Frequency Range: 2-23 GHz 17 dB Nominal Gain > 30 dB Adjustable Gain with Vg2 16 dBm Nominal P1dB < 2 dB Midband Noise Figure 0.15 um 3MI pHEMT Technology Nominal Bias: Vd = 5V, Id = 75 mA Chip Dimensions: 2.09 x 1.35 x 0.10 mm (0.082 x 0.053 x 0.004 in) 5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL + PARAMETER VALUE NOTES 7V 2/ V Positive Supply Voltage Vg1 Gate 1 Supply Voltage Range -2V TO 0 V Vg2 Gate 2 Supply Voltage Range -0.5 V TO +3.5 V + I Positive Supply Current 151 mA | IG | Gate Supply Current 10 mA PIN Input Continuous Wave Power 21 dBm 2/ PD Power Dissipation 1.5 W 2/, 3/ TCH Operating Channel Temperature 117 °C 4/, 5/ TM Mounting Temperature (30 Seconds) 320 °C TSTG 2/ -65 to 117 °C Storage Temperature 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is 1 E+6 hours. 4/ Junction operating temperature will directly affect the device median time to failure (T M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. TABLE II DC PROBE TEST (TA = 25 °C, Nominal) SYMBOL PARAMETER Idss, Q1- Q10 Vp, Q1-Q10 VBVGD, Q1-Q10 VBVGS, Q1-Q10 MINIMUM MAXIMUM UNIT Saturated Drain Current -- 216 mA Pinch-off Voltage -1 0 V Breakdown Voltage GateDrain Breakdown Voltage GateSource -30 -5 V -30 -5 V Note: Q1-Q10 is a 720um size FET. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU TABLE III RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Vd = 5V, Id = 75 mA Vg2 = 2V SYMBOL PARAMETER TEST CONDITION NOMINAL UNITS Gain Small Signal Gain f = 2-23 GHz 17 dB IRL Input Return Loss f = 2-23 GHz 14 dB ORL Output Return Loss f = 2-23 GHz 14 dB NF Noise Figure f = 3-13 GHz f = 2-18 GHz 2 <3 dB P1dB Output Power @ 1dB Gain Compression f = 2-23 GHz 16 dBm TABLE IV THERMAL INFORMATION* Parameter RθJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 5 V I D = 75 mA Pdiss = 0.375 W TCH (oC) RθJC (°C/W) TM (HRS) 82 32 4.5 E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU Measured Fixtured Data 20 30 16 24 Gain (dB) 12 18 Gain 8 12 4 6 0 0 Output -4 -6 -8 -12 -12 Return Loss (dB) Vd = 5V, Id= 75mA, Typical Vg1 = -60mV, Vg2 = 2V -18 Input -16 -24 0 3 6 9 12 15 18 21 24 27 30 Frequency (GHz) 9 8 7 NF (dB) 6 5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU Measured Fixtured Data Vd = 5V, Typical Vg1 = -60 mV 20 Id=73mA Vg2= 2.0V 15 Id=42mA Vg2=0.16V Gain (dB) 10 Id=21mA Vg2=-0.05V 5 Id=15mA Vg2=-0.25V 0 Id=11mA Vg2=-0.33V -5 Id=9mA Vg2=-0.37V -10 Id=5mA Vg2=-0.43V -15 Id=3mA Vg2=-0.47V -20 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Vd = 5V, Id= 75mA, Typical Vg1 = -60mV,Vg2 = 2V 20 Output Power (dBm) 18 16 14 12 P2dB 10 P1dB 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU Measured Fixtured Data Vd = 5V, Id= 75mA, Typical Vg1 = -60mV, Vg2 = 2V 60 50 IMD3 (dBc) 2 GHz 40 10 GHz 14 GHz 30 18 GHz 20 20 GHz 22 GHz 10 24 GHz 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Fundamental output power per tone (dBm) RC 31_29 35 TOI (dBm) 30 25 20 15 10 5 0 3 6 9 12 15 18 21 24 27 30 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU Measured Fixtured Data Vd = 5V, Id= 75mA, Pin = -10 dBm Vg2=2.00V 30 Vg2=1.75V Output TOI (dBm) 25 Vg2=1.50V Vg2=1.25V 20 Vg2=1.00V 15 Vg2=0.75V Vg2=0.50V 10 Vg2=0.25V 5 Vg2=0.0V Vg2=-0.25V 0 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU Mechanical Characteristics 2 1.980 (0.078) 1.208 (0.048) 1.242 (0.049) 0.103 (0.004) 1.351 (0.053) 1.210 (0.048) 3 0.973 (0.038) 4 0.235 (0.009) 1 0.099 (0.004) 5 0.000 (0.000) 2.091 (0.082) 1.971 (0.078) 0.095 (0.004) 0.000 (0.000) Units: millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of pad Chip size tolerance: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond Pad Pad Pad Pad Pad #1: #2: #3: #4: #5: RF IN VG2 VD RF OUT VG1 0.100 x 0.125 (0.004 x 0.005) 0.100 x 0.100 (0.004 x 0.004) 0.100 x 0.125 (0.004 x 0.005) 0.100 x 0.125 (0.004 x 0.005) 0.100 x 0.100 (0.004 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU Recommended Assembly Diagram Vg2 Vd 100 pF RF OUT RF IN 100 pF Vg1 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 2, 2005 TGA2513-EPU Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C for 30 sec. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 °C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com