Advance Product Information 0.3 - 10 GHz Downconverter TGC1411-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.3-10 GHz RF/LO Frequency Range 0.15-2.5 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 26 mA Chip Dimensions 1.8 mm x 2.6mm Primary Applications The TriQuint TGC1411-EPU is a double balanced MMIC mixer design using TriQuint’s proven 0.25 um Power pHEMT process to support a variety of communication system applications including satellite. • Satellite Systems • Point-to-Point Radio Typical Down-Conversion Gain TGC TGA1411 1411 LSB, +5.0V, LO = -5dBm, +25C 18 15 Conversion Gain (dB) The double balanced design consists of an integrated Gilbert cell mixer core, RF/LO baluns, differential combiner, and output driver amplifier. The TGC1411 may be operated from a single +3 V to +5 V power supply with typical current draw of 26 mA. The nominal LO power requirement is -5 dBm. The TGC1411 may also be operated as an up-converter. IF=151MHz IF=501MHz IF=1001MHz IF=1501MHz IF=2001MHz IF=2501MHz 12 9 6 3 0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 Typical P1dB and SSB Noise Figure TGCTGA1411 1411 LSB, +5.0V, LO = -5dBm, +25C 1 18 0 17 IF OUT LO IN Output P1dB (dBm) -1 RF IN 10.1 RF Frequency (GHz) 16 -2 15 P1dB -3 14 -4 13 -5 12 Noise Figure -6 11 -7 10 -8 9 -9 SSB Noise Figure (dB) The TGC1411 requires a minimum of off-chip components employing only a 100 pF off-chip bypass capacitor for the power supply line. No additional offchip RF matching components are required. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. 8 0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1 RF Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information Electrical Characteristics RECOMMENDED MAXIMUM RATINGS Symbol V+ I+ PD PIN TCH TM TSTG Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 8V 80 mA 0.64 W 14 dBm 150 °C 320 °C -65 °C to 150 °C Notes 3/ 1/, 2/ 1/ These ratings apply to each individual FET 2/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ Total current for the entire MMIC DC PROBE TESTS (TA = 25 °C ± 5°C) Symbol VP Test FET BVTest FET BVTest FET Parameter Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain Minimum -1.5 -30 -30 Maximum -0.5 -8 -8 Value V V V ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 °C ± 5°C) Symbol Parameter G ILO P1dB Conversion Gain LO Isolation Output P1dB IDC DC Current Test Condition Limit Vd=5V, LO=-5dBm Min Nom Max FRF = 1.0 GHz 13 16 20 FLO = 1.6 GHz FLO = 1.6 GHz -30 -20 FRF = 1.0 GHz -5 -1 FLO = 1.6 GHz 26 35 Units dB dB dB dBm mA Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information RF-Probe Performance Summary 3500 2500 50 15 19 18 0 17 0 16 100 15 500 45 200 40 1000 300 35 1500 400 30 2000 25 Number of Devices 500 14 Number of Devices Mean = 29.3 dB Sigma = 7.7 dB 600 20 3000 700 Mean = 16.7 dB Sigma = 0.54 dB LO to Output Isolation (dB) LO-IF LO-IF Isolation Isolation Down-Conversion Down-Conversion Gain Gain Typical Performance Parameter Units +5V Supply +3V Supply RF Frequency GHz 0.3 - 10.0 0.3 - 10.0 IF Frequency GHz 0.15 - 2.5 0.15 - 2.5 LO Frequency GHz 0.45 - 12.5 0.45 - 12.5 LO Power dBm -5 0 15 -5 0 13 14.5 -8 -4.5 11 Conversion Gain* dB SSB Noise Figure* dB 17.0 -1 0.0 11 LO Isolation dB 15.0 -30 11.0 -30 Input Port Return Loss dB -12 -12 Output Port Return Loss dB -12 -12 LO Port Return Loss dB -12 -12 Supply Current mA 26 28.0 22 24.0 Output P1dB* dBm * IF = 501 MHz Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information Mechanical Characteristics Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information VD 100 pF RF IN IF OUT LO IN Chip Assembly and Bonding Diagram Reflow process assembly notes: • • • • • AuSn (80/20) solder with limited exposure to temperatures at or above 300♣ C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: • • • • • • • vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: • • • • • thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200♣ C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5