Advance Product Information June 14, 2001 Ka Band Low Noise Amplifier TGA1319B-EPU Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range 1.75 dB Nominal Noise Figure 19 dB Nominal Gain 8dBm Pout 3V, 45 mA Self -biased Primary Applications Chip Dimensions 2.237 mm x 1.144 mm • • Preliminary Data, 6-10 Fixtured samples @ 25C Point-to-Point Radio Point-to-Multipoint Communications two 1-mil ball bonds at RF interconnects 6.0 5 5.0 0 4.0 -5 NF (dB) 3.0 S11 -10 (dB) 2.0 -15 1.0 -20 0.0 15.0 -25 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 1 26.0 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38 Frequency (GHz) Frequency (GHz) NF @ 25C S11 @ 25C 25 0 -5 20 -10 -15 15 S21 (dB) S22 (dB) -20 -25 10 -30 -35 5 -40 0 -45 1 3 6 8 11 13 16 18 21 23 Frequency (GHz) Gain @ 25C 26 28 31 33 36 38 1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38 Fre que ncy (GHz) S22 @ 25C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information June 14, 2001 TGA1319B-EPU MAXIMUM RATINGS SYMBOL VALUE PARAMETER 4/ + POSITIVE SUPPLY VOLTAGE 5V + POSITIVE SUPPLY CURRENT 60 mA - NEGATIVE GATE CURRENT 5.28 mA PIN INPUT CONTINUOUS WAVE POWER 15 dBm PD POWER DISSIPATION TCH OPERATING CHANNEL TEMPERATURE V I I TM TSTG NOTES 1/ .3 W 150 0C 2/ 3/ 0 MOUNTING TEMPERATURE (30 SECONDS) 320 C -65 to 150 0C STORAGE TEMPERATURE 1/ Total current for all stages. 2/ These ratings apply to each individual FET. 3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ These ratings represent the maximum operable values for the device. ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 °C ± 5°C) Vd = 3 V Symbol Parameter Gain NF PWR Small Signal Gain Noise Figure Output Power @ P1dB Test Condition F = 21 – 26 GHz F = 27 GHz F = 21 – 26.5 GHz F = 21 GHz F = 22 GHz F = 23 – 24 GHz F = 25 – 26 GHz F = 27 GHz Min 18.5 17 --5 6 7 8 10 Limit Typ Max ----2 ----------- Units dB dB dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information June 14, 2001 TGA1319B-EPU Vd=3V 100 pF 100 pF 100 pF RF out RF in Gnd TGA1319B - Recommended Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information June 14, 2001 TGA1319B-EPU Mechanical Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information June 14, 2001 TGA1319B-EPU Assembly Process Notes Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: •= •= •= •= •= •= •= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: •= •= •= •= •= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200ΓC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5