Advance Product Information January 7, 2004 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.86 x 0.85 x 0.1 mm (0.073 x 0.033 x 0.004 in) Primary Applications Preliminary Measured Data • Point-to-Point Radio Bias Conditions: Vd = 3.0 V, Id = 60 mA • Point-to-MultiPoint Radio • Ka Band VSAT Gain & Return Loss (dB) 30 Gain 20 10 0 ORL -10 IRL -20 -30 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) Noise Figure (dB) 3.0 2.5 2.0 1.5 1.0 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 5V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 280 mA 2/ 3/ ½Ig½ Gate Current 6 mA 3/ PIN Input Continuous Wave Power TBD PD Power Dissipation TBD -1 TO +0.5 V T CH Operating Channel Temperature 150 C TM Mounting Temperature (30 Seconds) 320 C TSTG Storage Temperature 2/ 4/ 0 5/ 6/ 0 0 -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL PARAMETER MIN. VBVGD3 Breakdown Voltage Gate-Source VP1,2,3 Pinch-off Voltage TYP. -0.4 MAX. UNITS -5 V V Q1 is 100 um FET, Q2 is 200 um FET, Q3 is 300 um FET. TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Drain Voltage, Vd 3.0 V Drain Current, Id 60 mA Gate Voltage, Vg -0.5 to 0 V Small Signal Gain, S21 22 dB Input Return Loss, S11 8 dB Output Return Loss, S22 8 dB Noise Figure, NF 2.3 dB Output Power @ 1 dB Compression Gain, P1dB 12 dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA 30 28 26 G ain (dB) 24 22 20 18 16 14 12 10 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 37 38 39 40 Fre que ncy (GHz) 3.0 2.8 Noise Figure (dB) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 26 27 28 29 30 31 32 33 34 35 36 Fre que ncy (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA 0 Input Return Loss (dB) -5 -10 -15 -20 -25 -30 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 35 36 37 38 39 40 Fre que ncy (GHz) O utput Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 25 26 27 28 29 30 31 32 33 34 Fre que ncy (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU Preliminary Measured Data Bias Conditions: Vd = 3.0 V, Id = 60 mA, Freq @ 30 GHz 24 100 21 95 18 90 15 85 12 80 Pout 9 Id (mA) Pout (dBm), Gain (dB) Gain 75 Ids 6 70 3 65 0 60 -16 -14 -12 -10 -8 -6 -4 -2 Pin (dBm) 30 20 OIP3 Pout/tone (dBm) 10 0 Pfundamental -10 -20 -30 -40 IMD3 -50 -60 -28 -26 -24 -22 -20 -18 -16 -14 -12 Pin/tone (dBm ) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU Chip Assembly Diagram RF bond wires should be as short as possible GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information January 7, 2004 TGA4507-EPU Assembly Process Notes Reflow process assembly notes: · · · · · Use AuSn (80/20) solder with limited exposure to temperatures at or above 300§ C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: · · · · · · · Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: · · · · Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200§ C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: [email protected] Web: www.triquint.com