Advance Product Information June 4, 2004 Ka-Band Power Amplifier TGA4517-EPU Key Features S-Parameter (dB) • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat 15 dB Nominal Gain 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm (0.171 x 0.154 x 0.002) in Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Idq = 2 A • Point-to-Point Radio • Military Radar Systems • Ka-Band Sat-Com 25 20 15 10 5 0 -5 -10 -15 -20 -25 GAIN ORL IRL 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Bias Conditions: Vd = 6 V, Idq = 2 A, Duty = 20% @ Pin = 24 dBm 38 Psat (dBm) 36 34 32 30 28 26 32 33 34 35 36 37 38 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 1 Advance Product Information June 4, 2004 TGA4517-EPU TABLE I ABSOLUTE MAXIMUM RATINGS 1/ SYMBOL PARAMETER Vd Drain Voltage Vg Gate Voltage Range Id Drain Current (Under RF Drive) Ig VALUE 8V 2/ -3 TO 0 V Gate Current PIN Input Continuous Wave Power PD Power Dissipation 4A 2/ 3/ 141 mA 3/ TBD 18.3 W 2/ 4/ 0 T CH Operating Channel Temperature 150 C TM Mounting Temperature (30 Seconds) 320 C TSTG NOTES 5/ 6/ 0 0 Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition (with RF applied) at a base plate temperature of 70 C, the median life is 1E+6 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. 0 TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL PARAMETER MIN. TYP. MAX. UNITS V BVGD,Q1-Q2 Breakdown Voltage Gate-Drain -30 -14 -11 V V BVGD,Q15-Q30 Breakdown Voltage Gate-Drain -30 -14 -11 V V P,Q15-Q30 Pinch-Off Voltage -1.5 -1 -0.5 V Each FET Cell is 750um Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 2 Advance Product Information June 4, 2004 TGA4517-EPU TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER TYPICAL UNITS Frequency Range 31 - 37 GHz Drain Voltage, Vd 6 V Drain Current (Quiescent), Idq 2 A Gate Voltage, Vg -0.5 V Small Signal Gain, S21 15 dB Input Return Loss, S11 14 dB Output Return Loss, S22 12 dB Output Power, Psat 35 dBm TABLE IV THERMAL INFORMATION PARAMETER RθJC Thermal Resistance (channel to backside of carrier) TEST CONDITIONS Vd = 6 V Idq = 2 A Pdiss = 12 W TCH O ( C) RTJC (qC/W) TM (HRS) 122.3 4.36 1.2E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature and with RF applied. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 3 Advance Product Information June 4, 2004 TGA4517-EPU Preliminary Measured Data Bias Conditions: Vd =5-6 V, Idq = 2 A, Room Temp. 24 Vd=5V Vd=6V 22 20 18 Gain (dB) 16 14 12 10 8 6 4 2 0 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Bias Conditions: Vd =5-6 V, Idq = 2 A, Duty = 20%, Room Temp. 38 Vd=5V Vd=6V 37 36 35 Psat (dBm) 34 33 32 31 30 29 28 27 26 32 33 34 35 36 37 38 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 4 Advance Product Information June 4, 2004 TGA4517-EPU Preliminary Measured Data Bias Conditions: Vd =5-6 V, Idq = 2 A, Room Temp. 0 Vd=5V Vd=6V Input Return Loss (dB) -5 -10 -15 -20 -25 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) 0 Vd=5V Vd=6V Output Return Loss (dB) -5 -10 -15 -20 -25 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 5 Advance Product Information June 4, 2004 TGA4517-EPU Preliminary Measured Data Drain Current vs. Drain Voltage, Duty = 20%, Room Temp. 6.0 Pin = 24 dBm Vd=5V Vd=6V 5.5 5.0 4.5 4.0 Id (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 32 33 34 35 36 37 38 Frequency (GHz) 8 Frequency = 35 GHz 36 7 34 6 32 5 30 4 28 3 26 2 24 Drain Current (A) Output Power (dBm) 38 1 Vd=5V Vd=6V 22 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Input Power (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 6 Advance Product Information June 4, 2004 TGA4517-EPU Preliminary Measured Data Bias Conditions: Vd =5-6 V, Idq = 2 A, CW Power @ Pin = 22dBm, Room Temp. 38 Vd=5V Vd=6V 37 36 Psat (dBm) 35 34 33 32 31 30 29 28 32 33 34 35 36 37 38 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 7 Advance Product Information June 4, 2004 TGA4517-EPU Mechanical Drawing 0.005 0.606 0.873 1.188 1.735 1.934 2.134 (0.125) (0.024) (0.034) (0.047) (0.068)(0.076) (0.084) 3.900 (0.154) 2 1.951 (0.077) 3 5 4 6 7 2.860 (0.113) 3.821 4.226 (0.150) (0.166) 9 8 1 10 18 0 0 17 16 15 14 13 0.606 0.873 1.188 1.735 1.934 2.134 (0.024) (0.034) (0.047) (0.068)(0.076)(0.084) 12 2.860 (0.113) (1.950 (0.077) 11 3.821 (0.150) 4.352 (0.171) Units: Millimeters (inches) Thickness: 0.050 (0.002) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) RF Ground is backside of MMIC Bond pad # 1: Bond pad # 2, 18: Bond pad # 3, 17: Bond pad # 4, 16: Bond pad # 5, 15: Bond pad # 6, 14: Bond pad # 7, 13: Bond pad # 8, 12: Bond pad # 9, 11: Bond pad # 10: (RF In) 0.125 x 0.200 0.125 x 0.125 (Vg1) 0.125 x 0.125 (Vd1) (Vg2) 0.125 x 0.125 0.125 x 0.125 (Vd2) 0.125 x 0.125 (Vg3) 0.125 x 0.125 (Vg4) 0.125 x 0.125 (Vd3) 0.125 x 0.125 (Vd4) (RF Out) 0.125 x 0.200 (0.005 x 0.008) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.005) (0.005 x 0.008) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 8 Advance Product Information June 4, 2004 TGA4517-EPU Chip Assembly Diagram Vd 0.01uF 0.01uF 1000pF 1000pF 1000pF 0.01uF 1000pF RF In RF Out 1000pF 1000pF 1000pF 0.01uF 0.01uF 0.01uF 100 Ohm 10uF . Vg Vd GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 9 Advance Product Information June 4, 2004 TGA4517-EPU Assembly Process Notes Reflow process assembly notes: • • • • • 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com 10