Advance Product Information October 30, 2003 Ku Band 2 Watt Packaged Amplifier TGA2510-EPU-SG Key Features and Performance • • • • • • • • • Preliminary Measured Performance 33.5 dBm Midband Psat 25 dB Nominal Gain 7 dB Typical Input Return Loss 10 dB Typical Output Return Loss 12.5 - 17 GHz Frequency Range Directional Power Detector with Reference 0.25µm pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Package Dimensions: 9.4 x 6.4 x 1.8 mm (0.370 x 0.250 x 0.071 inches) Bias Conditions: Vd=7.5V Id=650mA 10 S21 S11 5 S22 S21 (dB) 25 20 0 15 -5 10 -10 5 -15 0 -20 10 11 12 13 14 15 16 17 18 19 Primary Applications S11,S22 (dB) 30 • • VSAT Point to Point 20 Frequency (GHz) 60 Pout PAE 35 34 55 50 33 45 32 40 31 35 30 30 29 25 28 20 27 15 26 PAE @ Pin=+14dBm (%) Pout @ Pin=+14dBm (dBm) 36 10 11 12 13 14 15 16 17 18 19 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG TABLE I MAXIMUM RATINGS Symbol Parameter Value Notes 8V 1/ 2/ VD Drain Voltage VG Gate Voltage Range -5V to 0V 1/ ID Drain Supply Current (Quiescent) 1300 mA 1/ 2/ | IG | Gate Supply Current 18 mA 1/ PIN Input Continuous Wave Power 24 dBm 1/ 2/ PD Power Dissipation 6.15 W 1/ 2/ 3/ TCH TM TSTG 0 Operating Channel Temperature 150 C 4/ 0 Mounting Temperature (30 Seconds) 320 C 0 Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70°C 3/ When operated at this bias condition with a baseplate temperature of 70°C, the MTTF is reduced to 1.0E+6 hours 4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II THERMAL INFORMATION Parameter RQJC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 7.5V ID = 650mA PDISS = 4.88W TBASE = 70°C TCH (°C) 132.3 RQJC (°C/W) MTTF (hrs) 12.8 4.8E+6 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 TABLE III RF CHARACTERIZATION TABLE (TA = 25°C, Nominal) (Vd = 7.5V, Id = 650mA ±5%) Symbol Parameter TGA2510-EPU-SG Test Conditions Typ Units Gain Small Signal Gain F = 12.5 – 16 GHz 25 dB IRL Input Return Loss F = 12.5 – 16 GHz 7 dB ORL Output Return Loss F = 12.5 – 16 GHz 10 dB PWR Output Power @ Pin = +14dBm F = 12.5 – 16 GHz 33.5 dBm PAE Power Added Efficiency @ Pin = +14dBm F = 12.5 – 16 GHz 29 % Notes Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 Typical Fixtured Performance TGA2510-EPU-SG Id=650mA 30 Vd=5V Vd=7.5V 25 S21 (dB) 20 15 10 5 0 10 11 12 13 14 15 16 17 18 19 20 18 19 20 Frequency (GHz) 0 Vd=5V Vd=7.5V -2 -4 S11 (dB) -6 -8 -10 -12 -14 -16 -18 -20 10 11 12 13 14 15 16 17 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 Typical Fixtured Performance TGA2510-EPU-SG Id=650mA 0 Vd=5V Vd=7.5V -2 -4 S22 (dB) -6 -8 -10 -12 -14 -16 -18 -20 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 0 Vd=5V Vd=7.5V -10 S12 (dB) -20 -30 -40 -50 -60 -70 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Typical Fixtured Performance Id=650mA 65 36 Pout Vd=7.5V Pout Vd=5V 60 35 PAE Vd=7.5V PAE Vd=5V 55 34 50 33 45 32 40 31 35 30 30 29 25 28 20 27 15 26 10 11 12 13 14 15 16 17 18 PAE @ Pin=+14dBm (%) Pout @ Pin=+14dBm (dBm) 37 19 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 Typical Fixtured Performance TGA2510-EPU-SG Id=800mA 40 Average TOI (dBm) 39 38 37 36 35 34 33 32 31 30 12 13 14 15 16 17 18 26 28 Frequency (GHz) 18 12.5 GHz 13.5 GHz 14.5 GHz 15.5 GHz 12 IMD3 (dBm) 6 0 -6 -12 -18 -24 -30 16 18 20 22 24 Output Power/Tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Package Pinout Diagram VD VREF RF IN RF OUT VG VDET Package Assembly Diagram VD 10W 1mF RF IN RF OUT 10W VG 1mF GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Mechanical Drawing Dimensions in inches 0.012 typ CL 0.160 typ 0.250 sq 0.060, 6 pl Top View 0.010 0.020 ref (2) R=0.010 2 pl 0.006 0.030 0.060 typ Side View Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Recommended PWB Land Pattern Dimensions in inches GND / Thermal Vias RF out Vd 0.119 0.090 0.070 0.006 0.000 RF in - 0.006 - 0.070 - 0.090 - 0.119 Vg 0.195 0.145 0.119 0.000 - 0.119 - 0.145 - 0.195 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Advance Product Information October 30, 2003 TGA2510-EPU-SG Power Detector +5V 40KW 40KW External Vref Vdet Package 5pF 50W DUT 0.6 RF out TGA2510 Power Detector @ 14GHz Vref-Vdet (V) 0.5 0.4 0.3 0.2 0.1 0 14 16 18 20 22 24 26 28 30 32 34 36 38 40 Pout (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com