TRIQUINT TGA4816-EPU

Advance Product Information
November 16, 2004
10Gb/s Differential TIA
TGA4816-EPU
Key Features and Performance
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Preliminary Measured Performance
Bias Conditions: VPOS=3.3V, IPOS=60mA
0
CPD = 0.2 pF
RPD = 15 Ohm
66
-3
Differential TZ
Non-Inverting Output
60
-6
Inverting Output
54
-9
48
-12
42
-15
36
-18
1
3
5
7
9
11
Frequency (GHz)
13
Output Return Loss (dB)
Transimpedance (dB-Ohm)
72
1500Ω Single-Ended
Transimpedance
>10GHz 3dB Bandwidth
1.6mApp Maximum Input Current
8pA/ √Hz Input Noise Current
Adjustable Output Offset
Rx Signal Indicator (RSSI)
0.15µm 3MI pHEMT Technology
Bias Conditions: 3.3V, 60mA
Chip dimensions:
1.42 x 0.91 x 0.1 mm
(0.056 x 0.036 x 0.004 inches)
Primary Applications
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OC-192/STM-64 Fiber Optic
Systems
15
10.7Gb/s, 231-1 PRBS, Optical Pin = -10 dBm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
1
Advance Product Information
November 16, 2004
TGA4816-EPU
TABLE I
MAXIMUM RATINGS
Symbol
Parameter 1/
Value
Notes
VPOS
Positive Supply Voltage
5.5 V
2/
IPOS
Positive Supply Current (Quiescent)
70 mA
2/
14.5 dBm
2/
TBD
2/
PIN
Input Continuous Wave Power
PD
Power Dissipation
TCH
TM
TSTG
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
0
150 C
3/ 4/
0
320 C
0
-65 to 150 C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power
shall not exceed PD.
3/
These ratings apply to each individual FET.
4/
Junction operating temperature will directly affect the device median time to
failure (TM). For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
2
Advance Product Information
November 16, 2004
TGA4816-EPU
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25qC, Nominal)
(VPOS = 3.3V, IPOS = 60mA r5%) 1/
Parameter
Single-Ended Transimpedance (1GHz)
Notes
Typical
1500
Unit
Ω
2/ 3/
11
GHz
4/
30
kHz
Transimpedance Ripple (1 to 8GHz)
2/ 3/
0.3
dBpp
Group Delay Variation (0.1 to 8GHz)
2/ 3/
±15
ps
Ave Eq. Noise Current (0.1 to 8GHz)
2/ 3/
8
pA/√Hz
Output Return Loss (0.1 to F3dB)
2/ 3/
12
dB
1.6
mApp
-21
dBm
500
mVpp
3dB Transimpedance Bandwidth
Low Frequency 3dB Cut-Off
Input Overload Current (BER = 10-12 )
-12
Input Sensitivity (BER = 10
)
Single-Ended Limited Output Voltage
Note: Table II Lists the RF Characteristics of typical devices as determined
by fixtured measurements.
1/
2/
3/
4/
50 Ω Single-Ended Output Impedance
Photodiode Model: CPD = 0.2pF, RPD = 15Ω
RF Interconnect Inductance: 0.42nH
External Bypass Capacitors Required (see assembly drawing)
TABLE III
THERMAL INFORMATION
Parameter
Test Conditions
V+ = 3.3 V
RθJC Thermal
I+ = 60 mA
Resistance
(channel to backside of Pdiss = 0.198 W
carrier)
TCH
(oC)
RTJC
(qC/W)
TM
(HRS)
82
59.7
4.5 E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20
mil CuMo Carrier at 70°C baseplate temperature.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
3
Advance Product Information
November 16, 2004
Typical Fixtured Performance
Single-Ended Transimpedance
(dB-Ohm)
66
TGA4816-EPU
CPD = 0.2 pF
RPD = 15 Ohm
63
60
57
-25 deg C
54
+ 0 deg C
+25 deg C
51
+50 deg C
48
+75 deg C
45
1
3
5
7
9
11
13
15
Frequency (GHz)
0.95
RSSI Voltage (V)
0.90
0.85
0.80
0.75
0.70
0.00
0.20
0.40
0.60
RMS Photocurrent (mA)
0.80
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
4
Advance Product Information
November 16, 2004
Mechanical Drawing
TGA4816-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
5
Advance Product Information
November 16, 2004
TGA4816-EPU
Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
6
Advance Product Information
November 16, 2004
TGA4816-EPU
Assembly Process Notes
Reflow process assembly notes:
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Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
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Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
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Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465
Fax: (972)994-8504 Web: www.triquint.com
7